公开(公告)号：US06473257B1

公开(公告)日：2002-10-29

申请号：US09542996

申请日：2000-04-04

申请人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

发明人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

IPC分类号： G11B503

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/012 ,  G11B5/3909 ,  G11B5/455

摘要： The present invention relates to a method for measuring characteristics of a tunnel magnetoresistance effect element having a tunnel multilayered film comprising a tunnel barrier layer and a first and a second ferromagnetic layer formed to sandwich the tunnel barrier layer therebetween. This method comprises the steps of setting an initial current value I0 which does not destroy the element to be measured, measuring, using the current value I0, a first resistance value R1 as an approximate resistance value of the element, defining, based on the first resistance value R1 and a voltage value Vs which is a measurement standard for the element, an inspection current value Is (Is=Vs/R1), and measuring characteristics of the element using the inspection current value Is. Therefore, “without damaging or destroying elements” and “in an effective way”, the characteristics of the element can be measured.

摘要翻译： 本发明涉及一种用于测量具有隧道多层膜的隧道磁阻效应元件的特性的方法，所述隧道多层膜包括隧道势垒层和形成为将隧道势垒层夹在其间的第一和第二铁磁层。 该方法包括以下步骤：使用电流值I0来测量不破坏待测元素的初始电流值I0，将第一电阻值R1设定为元件的近似电阻值，基于第一 电阻值R1和作为元件的测量标准的电压值Vs，检查电流值Is（Is = Vs / R1）以及使用检查电流值Is的元件的测量特性。 因此，“不破坏或破坏元素”和“有效地”，可以衡量元素的特征。

公开(公告)号：US06451215B1

公开(公告)日：2002-09-17

申请号：US09542907

申请日：2000-04-04

申请人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

发明人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

IPC分类号： H01L4300

CPC分类号： B82Y25/00 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/12

摘要： The present invention relates to a method of producing a magneto-resistive tunnel junction head comprising a tunnel multilayered film having a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer. The method comprises a laminating step of forming the tunnel barrier layer and a non-magnetic metal protect layer in turn on the ferromagnetic pinned layer, an insulating layer forming step of forming side insulating layers on both sides of a lamination body having the ferromagnetic pinned layer, the tunnel barrier layer and the non-magnetic metal protect layer, a cleaning step of cleaning the surface of the non-magnetic metal protect layer, and a ferromagnetic free layer forming step of forming the ferromagnetic free layer such that the ferromagnetic free layer faces the ferromagnetic pinned layer via the cleaned surface. Therefore, according to the method, the magneto-resistive tunnel junction head is expected to have more improved head characteristics.

摘要翻译： 本发明涉及一种制造磁阻隧道结头的方法，其包括具有隧道势垒层，铁磁自由层和铁磁性钉扎层的隧道多层膜，使隧道势垒层保持在铁磁性自由层和 铁磁钉扎层。 所述方法包括依次在所述铁磁性钉扎层上形成所述隧道势垒层和非磁性金属保护层的层压步骤，在具有所述铁磁性钉扎层的层叠体的两侧形成侧绝缘层的绝缘层形成步骤 ，隧道势垒层和非磁性金属保护层，清洁非磁性金属保护层的表面的清洁步骤和形成铁磁性自由层的铁磁自由层形成步骤，使得铁磁自由层面向 铁磁钉扎层经过清洁的表面。 因此，根据该方法，期望磁阻隧道结头具有更多改进的头部特性。

公开(公告)号：US06219274B1

公开(公告)日：2001-04-17

申请号：US09438368

申请日：1999-11-12

申请人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

发明人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

IPC分类号： G11C1100

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  H01L43/12

摘要： The present invention relates to a ferromagnetic tunnel magnetoresistance effect element having a multilayered structure comprising a tunnel barrier layer and a first and a second ferromagnetic layer formed to sandwich the tunnel barrier layer therebetween, wherein the tunnel barrier layer is formed as an oxide film obtained by oxidizing a non-magnetic metal layer according to a radical oxidation method. Thus, there can be obtained a ferromagnetic tunnel magnetoresistance effect element which is excellent in productivity and quality stability and highly excellent in TMR effect.

摘要翻译： 铁磁隧道磁阻效应元件本发明涉及一种具有多层结构的铁磁隧道磁阻效应元件，该多层结构包括隧道势垒层和形成为将隧道势垒层夹在其间的第一和第二铁磁层，其中隧道势垒层形成为由 根据自由基氧化法氧化非磁性金属层。 因此，可以获得生产率和质量稳定性优异并且TMR效果非常优异的铁磁隧道磁阻效应元件。

公开(公告)号：US06483675B1

公开(公告)日：2002-11-19

申请号：US09538470

申请日：2000-03-30

申请人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

发明人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

IPC分类号： G11B582

CPC分类号： H01L43/08 ,  G11B5/3903 ,  Y10T428/24355

摘要： In a tunnel magnetoresistance effect element comprising a tunnel multilayered film having a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer, three indexes representing a surface roughness state of the tunnel barrier layer are set such that Ra≦1 nm, Rmax≦10 nm and Rrms≦1.2 nm, wherein Ra is one of the three indexes and representing the center line average roughness, Rmax is one of the three indexes and representing the maximum height, and Rrms is one of the three indexes and representing the standard deviation roughness. Thus, the tunnel magnetoresistance effect element exhibits improved characteristics, particularly, a large head output.

摘要翻译： 在隧道磁阻效应元件中，包括具有隧道势垒层的隧道多层膜，铁磁自由层和铁磁性钉扎层，使得隧道势垒层保持在铁磁性自由层和铁磁性钉扎层之间，表示表面的三个指标 设置隧道阻挡层的粗糙度状态使得Ra <= 1nm，Rmax <= 10nm和Rrms <= 1.2nm，其中Ra是三个指标之一并且表示中心线平均粗糙度，Rmax是 三个指标，代表最大高度，Rrms是三个指标之一，代表标准差粗糙度。 因此，隧道磁阻效应元件表现出改善的特性，特别是大的磁头输出。

公开(公告)号：US06335081B1

公开(公告)日：2002-01-01

申请号：US09621088

申请日：2000-07-21

申请人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

发明人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/7325 ,  G11B5/8404 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3268 ,  Y10S428/90 ,  Y10T428/1114 ,  Y10T428/1171 ,  Y10T428/24355

摘要： In a tunnel magnetoresistance effect element comprising a tunnel multilayered film on an under layer, the tunnel multilayered film has a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer, wherein three indexes representing a surface roughness state of a surface, which faces the tunnel multilayered film, of the under layer are set such that Ra ≦0.5 nm, Rmax ≦5 nm and Rrms ≦0.55 nm, wherein Ra is one of the three indexes and represents the center line average roughness, Rmax is one of the three indexes and represents the maximum height, and Rrms is one of the three indexes and represents the standard deviation roughness. Thus, the tunnel magnetoresistance effect element exhibits improved characteristics, particularly, a large head output.

摘要翻译： 隧道磁阻效应元件包括在下层上的隧道多层膜，隧道多层膜具有隧道势垒层，铁磁自由层和铁磁性钉扎层，使隧道势垒层保持在铁磁自由层和 铁磁性钉扎层，其中表示下层的面向隧道多层膜的表面的表面粗糙度状态的三个指标被设置为使得Ra <= 0.5nm，Rmax <= 5nm和Rrms <= 0.55nm，其中 Ra是三个指标之一，代表中心线平均粗糙度，Rmax是三个指标之一，代表最大高度，Rrms是三个指标之一，代表标准偏差粗糙度。 因此，隧道磁阻效应元件表现出改善的特性，特别是大的磁头输出。

公开(公告)号：US06413325B1

公开(公告)日：2002-07-02

申请号：US09433217

申请日：1999-11-04

申请人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

发明人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

IPC分类号： C21D104

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  H01F41/302 ,  Y10T29/49034

摘要： A method of manufacturing a thin-film magnetic head with a SVMR element which includes first and second layers of a ferromagnetic material (free and pinned layers) separated by a layer of non-magnetic electrically conductive material, and a layer of anti-ferromagnetic material formed in physical contact with the pinned layer. The method has a first temperature annealing (pin annealing) step of annealing the SVMR element under application of magnetic field to provide exchange coupling between the pinned layer and the anti-ferromagnetic material layer so that the pinned layer is pinned toward a predetermined direction, and a second temperature annealing (free layer annealing) step of annealing the SVMR element so that axis of easy magnetization of the free layer orients a direction substantially perpendicular to the predetermined direction. The free layer annealing is performed at a temperature lower than 150° C.

摘要翻译： 一种制造具有SVMR元件的薄膜磁头的方法，所述SVMR元件包括由非磁性导电材料层隔开的铁磁材料（自由和被钉扎层）的第一和第二层，以及一层抗铁磁材料 与被钉扎层物理接触形成。 该方法具有在施加磁场的情况下对SVMR元件进行退火的第一温度退火（针退火）步骤，以提供被钉扎层和反铁磁材料层之间的交换耦合，使得被钉扎层朝着预定方向被钉扎，以及 对SVMR元件进行退火的第二温度退火（自由层退火）步骤，使得自由层的易磁化轴定向基本上垂直于预定方向的方向。 自由层退火在低于150℃的温度下进行。

公开(公告)号：US06221518B1

公开(公告)日：2001-04-24

申请号：US09289939

申请日：1999-04-13

申请人： Satoru Araki ,  Haruyuki Morita

发明人： Satoru Araki ,  Haruyuki Morita

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/123 ,  H01F10/3268 ,  H01F41/302 ,  Y10S428/90 ,  Y10T428/1121

摘要： In a spin valve type magnetoresistance effect film comprising a multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, and an antiferromagnetic layer which is formed on a surface of the ferromagnetic layer remote from the other surface thereof abutting the non-magnetic metal layer so as to pin a direction of magnetization of the ferromagnetic layer, the antiferromagnetic layer is made of a compound containing Mn and having a CuAu-I type regular crystal structure and is crystallized by laser irradiation to show antiferromagnetism. Thus, an excellent effect is achieved that mutual diffusion in the laminate film is very small and the MR ratio is very large. Further, when a spin valve head is formed, an excellent effect is achieved that the sensitivity is high and the output is large. Further, the laminate film forming the spin valve film can be reduced in thickness so that a product can be more compact. Moreover, an excellent effect is achieved that the energy loss is small and the productivity is high.

摘要翻译： 在包括非磁性金属层的多层膜的自旋阀型磁电阻效应膜中，形成在非磁性金属层的一个表面上的铁磁层，形成在非磁性金属的另一个表面上的软磁性层 层和反铁磁层，其形成在铁磁层的远离其另一表面的表面上，以抵抗非磁性金属层以引导铁磁层的磁化方向，反铁磁层由化合物 含有Mn并具有CuAu-I型规则晶体结构，并通过激光照射结晶显示出反铁磁性。 因此，实现了层压膜中相互扩散非常小并且MR比非常大的优异效果。 此外，当形成自旋阀头时，实现了灵敏度高并且输出大的优异效果。 此外，形成自旋阀膜的层压膜的厚度可以减小，使得产品可以更紧凑。 此外，实现能量损失小，生产率高的优异效果。

公开(公告)号：US06181535B2

公开(公告)日：2001-01-30

申请号：US09260722

申请日：1999-03-02

申请人： Satoru Araki ,  Haruyuki Morita

发明人： Satoru Araki ,  Haruyuki Morita

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/0008 ,  G11B2005/3996 ,  Y10T428/1121

摘要： A magnetoresistance effect type head of the present invention has a spin valve type magnetoresistance effect film. A pulse magnetic field process is carried out wherein a pulse magnetic field of the pulse magnetic field intensity I of 5 kOe to 40 kOe is intermittently applied to the magnetoresistance effect film upon executing a so-called magnetization orthogonalization process. As a result, there can be obtained the magnetoresistance effect type head, wherein the orthogonalization of magnetization of a soft magnetic layer and a ferromagnetic layer is achieved under a very low temperature condition, i.e. without heating up to a blocking temperature Tb, and over a short time, so that deterioration of a magnetic characteristic is quite small, a head characteristic is stable and a head output is large.

摘要翻译： 本发明的磁阻效应型头具有自旋阀型磁电阻效应膜。 执行脉冲磁场处理，其中在执行所谓的磁化正交化处理时，脉冲磁场强度I为5kOe至40kOe的脉冲磁场被间歇地施加到磁阻效应膜。 结果，可以获得磁阻效应型磁头，其中软磁性层和铁磁层的磁化正交化在非常低的温度条件下实现，即不加热到阻挡温度Tb，并且在 短时间，磁特性劣化相当小，头特性稳定，头输出大。

公开(公告)号：US06391431B1

公开(公告)日：2002-05-21

申请号：US09325394

申请日：1999-06-04

申请人： Masashi Sano ,  Yoshihiro Tsuchiya ,  Satoru Araki ,  Haruyuki Morita

发明人： Masashi Sano ,  Yoshihiro Tsuchiya ,  Satoru Araki ,  Haruyuki Morita

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/123 ,  H01F10/3268 ,  Y10T428/1143 ,  Y10T428/1157 ,  Y10T428/12861 ,  Y10T428/12944 ,  Y10T428/24975

摘要： A spin valve type magnetoresistance effect film comprises a multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, an antiferromagnetic layer which is formed on a surface of the ferromagnetic layer remote from the other surface thereof abutting the non-magnetic metal layer so as to pin a direction of magnetization of the ferromagnetic layer, and an antiferromagnetization promote layer formed on a surface of the antiferromagnetic layer remote from the other surface thereof abutting the ferromagnetic layer, wherein the antiferromagnetic layer is made of a compound containing Mn and having a CuAu-I type regular crystal structure the which requires a heat treatment for generating exchange coupling relative to the ferromagnetic layer, and the antiferromagnetic layer after the heat treatment has a state wherein (110) crystal surfaces are oriented on a film surface of the antiferromagnetic layer.

摘要翻译： 自旋阀型磁阻效应膜包括：包含非磁性金属层的多层膜，在非磁性金属层的一个表面上形成的铁磁层，形成在非磁性金属层的另一个表面上的软磁性层 形成在铁磁层的远离其另一表面的表面上的反铁磁性层，其与非磁性金属层邻接以引导铁磁层的磁化方向，以及形成在铁磁层的表面上的反铁磁化促进层 反铁磁层远离其另一表面邻接铁磁层，其中反铁磁层由含Mn的化合物制成并具有CuAu-I型规则晶体结构，其需要进行热处理以产生相对于铁磁层的交换耦合 ，热处理后的反铁磁层具有（110）晶面的状态 在反铁磁层的膜表面上取向。

公开(公告)号：US06469879B1

公开(公告)日：2002-10-22

申请号：US09517455

申请日：2000-03-02

申请人： Olivier Redon ,  Koji Shimazawa ,  Noriaki Kasahara ,  Satoru Araki

发明人： Olivier Redon ,  Koji Shimazawa ,  Noriaki Kasahara ,  Satoru Araki

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932

摘要： Magneto-resistive tunnel junction head having a tunnel multilayered film with a tunnel barrier layer, a ferromagnetic free layer, and a ferromagnetic pinned layer formed as a sandwich. A magnetic field is applied to the free layer in a longitudinal direction by biasing elements at opposite ends, and a length of the free layer is greater than a length of the pinned layer such that the free layer has portions extending beyond opposite ends of the pinned layer. A head output suitable for ultra-high density recording can be obtained with less reduction of TMR ratio. Selection of the biasing element is flexible. A hard material and also an antiferromagnetic material can be selected and the biasing elements can be disposed on either an upper or lower side of the free layer at a desired distance.

摘要翻译： 具有隧道势垒层的隧道多层膜，铁磁自由层和形成为三明治形成的铁磁性钉扎层的磁阻隧道结头。 磁场通过在相对端偏置元件而沿纵向方向施加到自由层，并且自由层的长度大于被钉扎层的长度，使得自由层具有延伸超过固定的相对端的部分 层。 可以以较少的TMR比降低获得适合于超高密度记录的头部输出。 偏置元件的选择是灵活的。 可以选择硬质材料和反铁磁材料，并且偏置元件可以以期望的距离设置在自由层的上侧或下侧。