公开(公告)号：US06483675B1

公开(公告)日：2002-11-19

申请号：US09538470

申请日：2000-03-30

申请人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

发明人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

IPC分类号： G11B582

CPC分类号： H01L43/08 ,  G11B5/3903 ,  Y10T428/24355

摘要： In a tunnel magnetoresistance effect element comprising a tunnel multilayered film having a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer, three indexes representing a surface roughness state of the tunnel barrier layer are set such that Ra≦1 nm, Rmax≦10 nm and Rrms≦1.2 nm, wherein Ra is one of the three indexes and representing the center line average roughness, Rmax is one of the three indexes and representing the maximum height, and Rrms is one of the three indexes and representing the standard deviation roughness. Thus, the tunnel magnetoresistance effect element exhibits improved characteristics, particularly, a large head output.

摘要翻译： 在隧道磁阻效应元件中，包括具有隧道势垒层的隧道多层膜，铁磁自由层和铁磁性钉扎层，使得隧道势垒层保持在铁磁性自由层和铁磁性钉扎层之间，表示表面的三个指标 设置隧道阻挡层的粗糙度状态使得Ra <= 1nm，Rmax <= 10nm和Rrms <= 1.2nm，其中Ra是三个指标之一并且表示中心线平均粗糙度，Rmax是 三个指标，代表最大高度，Rrms是三个指标之一，代表标准差粗糙度。 因此，隧道磁阻效应元件表现出改善的特性，特别是大的磁头输出。

公开(公告)号：US06335081B1

公开(公告)日：2002-01-01

申请号：US09621088

申请日：2000-07-21

申请人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

发明人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/7325 ,  G11B5/8404 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3268 ,  Y10S428/90 ,  Y10T428/1114 ,  Y10T428/1171 ,  Y10T428/24355

摘要： In a tunnel magnetoresistance effect element comprising a tunnel multilayered film on an under layer, the tunnel multilayered film has a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer, wherein three indexes representing a surface roughness state of a surface, which faces the tunnel multilayered film, of the under layer are set such that Ra ≦0.5 nm, Rmax ≦5 nm and Rrms ≦0.55 nm, wherein Ra is one of the three indexes and represents the center line average roughness, Rmax is one of the three indexes and represents the maximum height, and Rrms is one of the three indexes and represents the standard deviation roughness. Thus, the tunnel magnetoresistance effect element exhibits improved characteristics, particularly, a large head output.

摘要翻译： 隧道磁阻效应元件包括在下层上的隧道多层膜，隧道多层膜具有隧道势垒层，铁磁自由层和铁磁性钉扎层，使隧道势垒层保持在铁磁自由层和 铁磁性钉扎层，其中表示下层的面向隧道多层膜的表面的表面粗糙度状态的三个指标被设置为使得Ra <= 0.5nm，Rmax <= 5nm和Rrms <= 0.55nm，其中 Ra是三个指标之一，代表中心线平均粗糙度，Rmax是三个指标之一，代表最大高度，Rrms是三个指标之一，代表标准偏差粗糙度。 因此，隧道磁阻效应元件表现出改善的特性，特别是大的磁头输出。

公开(公告)号：US06473257B1

公开(公告)日：2002-10-29

申请号：US09542996

申请日：2000-04-04

申请人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

发明人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

IPC分类号： G11B503

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/012 ,  G11B5/3909 ,  G11B5/455

摘要： The present invention relates to a method for measuring characteristics of a tunnel magnetoresistance effect element having a tunnel multilayered film comprising a tunnel barrier layer and a first and a second ferromagnetic layer formed to sandwich the tunnel barrier layer therebetween. This method comprises the steps of setting an initial current value I0 which does not destroy the element to be measured, measuring, using the current value I0, a first resistance value R1 as an approximate resistance value of the element, defining, based on the first resistance value R1 and a voltage value Vs which is a measurement standard for the element, an inspection current value Is (Is=Vs/R1), and measuring characteristics of the element using the inspection current value Is. Therefore, “without damaging or destroying elements” and “in an effective way”, the characteristics of the element can be measured.

摘要翻译： 本发明涉及一种用于测量具有隧道多层膜的隧道磁阻效应元件的特性的方法，所述隧道多层膜包括隧道势垒层和形成为将隧道势垒层夹在其间的第一和第二铁磁层。 该方法包括以下步骤：使用电流值I0来测量不破坏待测元素的初始电流值I0，将第一电阻值R1设定为元件的近似电阻值，基于第一 电阻值R1和作为元件的测量标准的电压值Vs，检查电流值Is（Is = Vs / R1）以及使用检查电流值Is的元件的测量特性。 因此，“不破坏或破坏元素”和“有效地”，可以衡量元素的特征。

公开(公告)号：US06451215B1

公开(公告)日：2002-09-17

申请号：US09542907

申请日：2000-04-04

申请人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

发明人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

IPC分类号： H01L4300

CPC分类号： B82Y25/00 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/12

摘要： The present invention relates to a method of producing a magneto-resistive tunnel junction head comprising a tunnel multilayered film having a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer. The method comprises a laminating step of forming the tunnel barrier layer and a non-magnetic metal protect layer in turn on the ferromagnetic pinned layer, an insulating layer forming step of forming side insulating layers on both sides of a lamination body having the ferromagnetic pinned layer, the tunnel barrier layer and the non-magnetic metal protect layer, a cleaning step of cleaning the surface of the non-magnetic metal protect layer, and a ferromagnetic free layer forming step of forming the ferromagnetic free layer such that the ferromagnetic free layer faces the ferromagnetic pinned layer via the cleaned surface. Therefore, according to the method, the magneto-resistive tunnel junction head is expected to have more improved head characteristics.

摘要翻译： 本发明涉及一种制造磁阻隧道结头的方法，其包括具有隧道势垒层，铁磁自由层和铁磁性钉扎层的隧道多层膜，使隧道势垒层保持在铁磁性自由层和 铁磁钉扎层。 所述方法包括依次在所述铁磁性钉扎层上形成所述隧道势垒层和非磁性金属保护层的层压步骤，在具有所述铁磁性钉扎层的层叠体的两侧形成侧绝缘层的绝缘层形成步骤 ，隧道势垒层和非磁性金属保护层，清洁非磁性金属保护层的表面的清洁步骤和形成铁磁性自由层的铁磁自由层形成步骤，使得铁磁自由层面向 铁磁钉扎层经过清洁的表面。 因此，根据该方法，期望磁阻隧道结头具有更多改进的头部特性。

公开(公告)号：US06219274B1

公开(公告)日：2001-04-17

申请号：US09438368

申请日：1999-11-12

申请人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

发明人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

IPC分类号： G11C1100

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  H01L43/12

摘要： The present invention relates to a ferromagnetic tunnel magnetoresistance effect element having a multilayered structure comprising a tunnel barrier layer and a first and a second ferromagnetic layer formed to sandwich the tunnel barrier layer therebetween, wherein the tunnel barrier layer is formed as an oxide film obtained by oxidizing a non-magnetic metal layer according to a radical oxidation method. Thus, there can be obtained a ferromagnetic tunnel magnetoresistance effect element which is excellent in productivity and quality stability and highly excellent in TMR effect.

摘要翻译： 铁磁隧道磁阻效应元件本发明涉及一种具有多层结构的铁磁隧道磁阻效应元件，该多层结构包括隧道势垒层和形成为将隧道势垒层夹在其间的第一和第二铁磁层，其中隧道势垒层形成为由 根据自由基氧化法氧化非磁性金属层。 因此，可以获得生产率和质量稳定性优异并且TMR效果非常优异的铁磁隧道磁阻效应元件。

公开(公告)号：US06413325B1

公开(公告)日：2002-07-02

申请号：US09433217

申请日：1999-11-04

申请人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

发明人： Koji Shimazawa ,  Satoru Araki ,  Haruyuki Morita

IPC分类号： C21D104

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  H01F41/302 ,  Y10T29/49034

摘要： A method of manufacturing a thin-film magnetic head with a SVMR element which includes first and second layers of a ferromagnetic material (free and pinned layers) separated by a layer of non-magnetic electrically conductive material, and a layer of anti-ferromagnetic material formed in physical contact with the pinned layer. The method has a first temperature annealing (pin annealing) step of annealing the SVMR element under application of magnetic field to provide exchange coupling between the pinned layer and the anti-ferromagnetic material layer so that the pinned layer is pinned toward a predetermined direction, and a second temperature annealing (free layer annealing) step of annealing the SVMR element so that axis of easy magnetization of the free layer orients a direction substantially perpendicular to the predetermined direction. The free layer annealing is performed at a temperature lower than 150° C.

摘要翻译： 一种制造具有SVMR元件的薄膜磁头的方法，所述SVMR元件包括由非磁性导电材料层隔开的铁磁材料（自由和被钉扎层）的第一和第二层，以及一层抗铁磁材料 与被钉扎层物理接触形成。 该方法具有在施加磁场的情况下对SVMR元件进行退火的第一温度退火（针退火）步骤，以提供被钉扎层和反铁磁材料层之间的交换耦合，使得被钉扎层朝着预定方向被钉扎，以及 对SVMR元件进行退火的第二温度退火（自由层退火）步骤，使得自由层的易磁化轴定向基本上垂直于预定方向的方向。 自由层退火在低于150℃的温度下进行。

公开(公告)号：US06943998B2

公开(公告)日：2005-09-13

申请号：US09824060

申请日：2001-04-03

申请人： Koji Shimazawa ,  Tsuyoshi Umehara ,  Satoru Araki

发明人： Koji Shimazawa ,  Tsuyoshi Umehara ,  Satoru Araki

IPC分类号： G11B5/31 ,  G11B5/012 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08

摘要： A tunnel magnetoresistive effective element has a ferromagnetic tunnel effective film with a free layer, a pinned layer and a tunnel barrier layer sandwiched between the free layer and the pinned layer, a magnetic bias means, a first conductive layer, and a second conductive layer. The magnetic bias means apply a bias magnetic field to the free layer of the ferromagnetic tunnel effective film. The first conductive layer and the second conductive layer generate magnetic fields having the same direction as that of the bias magnetic field through a sense current therein to reinforce the bias magnetic field.

摘要翻译： 隧道磁阻有效元件具有铁磁隧道有效膜，其具有夹在自由层和被钉扎层之间的自由层，钉扎层和隧道势垒层，磁偏置装置，第一导电层和第二导电层。 磁偏置装置对铁磁隧道有效膜的自由层施加偏置磁场。 第一导电层和第二导电层通过其中的感测电流产生具有与偏置磁场相同方向的磁场，以加强偏置磁场。

公开(公告)号：US06603642B1

公开(公告)日：2003-08-05

申请号：US09685891

申请日：2000-10-11

申请人： Satoru Araki ,  Koji Shimazawa

发明人： Satoru Araki ,  Koji Shimazawa

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B5/398 ,  G11B2005/3996

摘要： An object of the invention is to provide a magnetic transducer and a thin film magnetic head using the same, which can be manufactured by a simple manufacturing process and can obtain good output. The thin film magnetic head has a stack including a plurality of magnetic layers stacked alternately with a plurality of nonmagnetic layers. A layer having the fixed orientation of magnetization is formed on at least one side of the stack in the direction of stacking. The layer has a stacked structure comprising an antiferromagnetic layer and an exchange coupling layer exchange coupling with the antiferromagnetic layer. The magnetic layers of the stack are changed into a single magnetic domain by a magnetic field generated by exchange coupling between the antiferromagnetic layer and the exchange coupling layer so as to prevent Barkhausen noise. Since the layer is formed on at least one side of the stack in the direction of stacking, a manufacturing process is simplified.

摘要翻译： 本发明的目的是提供一种使用其的磁换能器和薄膜磁头，其可以通过简单的制造过程制造并且可以获得良好的输出。 薄膜磁头具有堆叠，其包括与多个非磁性层交替堆叠的多个磁性层。 具有固定的磁化取向的层在层叠方向的至少一侧上形成。 该层具有包括反铁磁层和与反铁磁层交换耦合的交换耦合层的堆叠结构。 通过由反铁磁层和交换耦合层之间的交换耦合产生的磁场将堆叠的磁层变成单个磁畴，以防止巴克豪森噪声。 由于层在层叠方向的至少一侧上形成，因此简化了制造工序。

公开(公告)号：US06255814B1

公开(公告)日：2001-07-03

申请号：US09368672

申请日：1999-08-05

申请人： Koji Shimazawa ,  Satoru Araki

发明人： Koji Shimazawa ,  Satoru Araki

IPC分类号： G01R3302

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/455 ,  G11B2005/0008 ,  G11B2005/3996

摘要： A method for measuring bias magnetic field for controlling magnetic domain (longitudinal bias magnetic field) of a MR element has the step of applying an external measurement magnetic field onto the MR element which is biased with the magnetic field for controlling the magnetic domain (longitudinal bias magnetic field) in parallel to the direction of the bias magnetic field, the step of measuring &rgr;-H loop of the MR element (output resistance of MR element versus magnetic field strength loop) under the application of the external measurement magnetic field, and the step of determining a shifted amount of the measured &rgr;-H loop.

摘要翻译： 用于测量用于控制MR元件的磁畴（纵向偏置磁场）的偏置磁场的方法具有将外部测量磁场施加到MR元件上的步骤，所述MR元件被用于控制磁畴的磁场偏置（纵向偏置 磁场）平行于偏置磁场的方向，在外部测量磁场的应用下测量MR元件的rho-H环（MR元件的输出电阻与磁场强度回路）的步骤，以及 确定所测量的rho-H环的位移量的步骤。

公开(公告)号：US06469879B1

公开(公告)日：2002-10-22

申请号：US09517455

申请日：2000-03-02

申请人： Olivier Redon ,  Koji Shimazawa ,  Noriaki Kasahara ,  Satoru Araki

发明人： Olivier Redon ,  Koji Shimazawa ,  Noriaki Kasahara ,  Satoru Araki

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932

摘要： Magneto-resistive tunnel junction head having a tunnel multilayered film with a tunnel barrier layer, a ferromagnetic free layer, and a ferromagnetic pinned layer formed as a sandwich. A magnetic field is applied to the free layer in a longitudinal direction by biasing elements at opposite ends, and a length of the free layer is greater than a length of the pinned layer such that the free layer has portions extending beyond opposite ends of the pinned layer. A head output suitable for ultra-high density recording can be obtained with less reduction of TMR ratio. Selection of the biasing element is flexible. A hard material and also an antiferromagnetic material can be selected and the biasing elements can be disposed on either an upper or lower side of the free layer at a desired distance.

摘要翻译： 具有隧道势垒层的隧道多层膜，铁磁自由层和形成为三明治形成的铁磁性钉扎层的磁阻隧道结头。 磁场通过在相对端偏置元件而沿纵向方向施加到自由层，并且自由层的长度大于被钉扎层的长度，使得自由层具有延伸超过固定的相对端的部分 层。 可以以较少的TMR比降低获得适合于超高密度记录的头部输出。 偏置元件的选择是灵活的。 可以选择硬质材料和反铁磁材料，并且偏置元件可以以期望的距离设置在自由层的上侧或下侧。