摘要:
A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle ↓(0°
摘要:
A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle θ (0°
摘要:
A method for evaluating a local flare in an exposure tool, includes: measuring a projection light intensity distribution by transferring a monitor mask pattern onto a semiconductor substrate; calculating a first ratio between an illumination light intensity on the monitor mask pattern and a first projection light intensity calculated based on the monitor mask pattern; calculating a distribution function of a local flare, due to a mask pattern coverage of the monitor mask pattern, based on the first ratio and the projection light intensity distribution; dividing a design mask pattern into a plurality of unit areas; calculating a second ratio between the illumination light intensity on each of the unit areas and a second projection light intensity calculated based on the design mask pattern; and calculating a local flare intensity in each of the unit areas, based on the second ratio and the distribution function.
摘要:
A method for evaluating a local flare in an exposure tool, includes: measuring a projection light intensity distribution by transferring a monitor mask pattern onto a semiconductor substrate; calculating a first ratio between an illumination light intensity on the monitor mask pattern and a first projection light intensity calculated based on the monitor mask pattern; calculating a distribution function of a local flare, due to a mask pattern coverage of the monitor mask pattern, based on the first ratio and the projection light intensity distribution; dividing a design mask pattern into a plurality of unit areas; calculating a second ratio between the illumination light intensity on each of the unit areas and a second projection light intensity calculated based on the design mask pattern; and calculating a local flare intensity in each of the unit areas, based on the second ratio and the distribution function.
摘要:
In a model-based OPC which makes a suitable mask correction for each mask pattern using an optical image intensity simulator, a mask pattern is divided into subregions and the model of optical image intensity simulation is changed according to the contents of the pattern in each subregion. When the minimum dimensions of the mask pattern are smaller than a specific threshold value set near the exposure wavelength, the region is calculated using a high-accuracy model and the other regions are calculated using a high-speed model.
摘要:
An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.
摘要:
An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.
摘要:
A system for generating mask data includes an extracting module extracting a block necessary to correct process proximity effects as a wide correction area from a plurality of blocks by comparing parameter, a wide correction data generator generating wide correction data to make the correction applied to the wide correction area, and a mask data generator generating mask data by applying the wide correction data to the wide correction area.
摘要:
An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.
摘要:
A method of forming a contact hole on a substrate by using a projection aligner comprising a lighting system including a light source, an aperture, and a condenser lens, a photo mask on which light from the lighting system is incident, and a projection lens for projecting the light from the photo mask onto the substrate, comprises forming a first photosensitive resist film on the substrate; exposing the first photosensitive resist film by using a photo mask in which mask patterns are cyclically arranged in a first direction and a second direction which is orthogonal to the first direction and a first aperture having light transmission parts arranged symmetrically with respect to a center point in the first direction; developing the exposed first photosensitive resist film to form first lines and linear spaces; forming a second photosensitive resist film on the substrate; exposing the second photosensitive resist film by using the photo mask and a second aperture having light transmission parts arranged symmetrically with respect to a center point in the second direction; and developing the second photosensitive resist film to form second lines and linear spaces which are orthogonal to the first lines and linear spaces.