Method for evaluating a local flare, correction method for a mask pattern, manufacturing method for a semiconductor device and a computer program product
    3.
    发明授权
    Method for evaluating a local flare, correction method for a mask pattern, manufacturing method for a semiconductor device and a computer program product 有权
    用于评估局部耀斑的方法,掩模图案的校正方法,半导体器件的制造方法和计算机程序产品

    公开(公告)号:US07327436B2

    公开(公告)日:2008-02-05

    申请号:US11136404

    申请日:2005-05-25

    IPC分类号: G03B27/68 G03B27/72

    CPC分类号: G03B27/72

    摘要: A method for evaluating a local flare in an exposure tool, includes: measuring a projection light intensity distribution by transferring a monitor mask pattern onto a semiconductor substrate; calculating a first ratio between an illumination light intensity on the monitor mask pattern and a first projection light intensity calculated based on the monitor mask pattern; calculating a distribution function of a local flare, due to a mask pattern coverage of the monitor mask pattern, based on the first ratio and the projection light intensity distribution; dividing a design mask pattern into a plurality of unit areas; calculating a second ratio between the illumination light intensity on each of the unit areas and a second projection light intensity calculated based on the design mask pattern; and calculating a local flare intensity in each of the unit areas, based on the second ratio and the distribution function.

    摘要翻译: 一种用于评估曝光工具中的局部耀斑的方法,包括:通过将监视器掩模图案转移到半导体衬底上来测量投影光强度分布; 计算监视器掩模图案上的照明光强度与基于监视器掩模图案计算的第一投影光强度之间的第一比率; 基于第一比率和投影光强度分布,计算由于监视器掩模图案的掩模图案覆盖而导致的局部光晕的分布函数; 将设计掩模图案分割成多个单位区域; 计算每个单位区域上的照明光强度和基于设计掩模图案计算的第二投影光强度之间的第二比率; 以及基于第二比率和分布函数计算每个单位区域中的局部火炬强度。

    Method for evaluating a local flare, correction method for a mask pattern, manufacturing method for a semiconductor device and a computer program product
    4.
    发明申请
    Method for evaluating a local flare, correction method for a mask pattern, manufacturing method for a semiconductor device and a computer program product 有权
    用于评估局部耀斑的方法,掩模图案的校正方法,半导体器件的制造方法和计算机程序产品

    公开(公告)号:US20050275820A1

    公开(公告)日:2005-12-15

    申请号:US11136404

    申请日:2005-05-25

    CPC分类号: G03B27/72

    摘要: A method for evaluating a local flare in an exposure tool, includes: measuring a projection light intensity distribution by transferring a monitor mask pattern onto a semiconductor substrate; calculating a first ratio between an illumination light intensity on the monitor mask pattern and a first projection light intensity calculated based on the monitor mask pattern; calculating a distribution function of a local flare, due to a mask pattern coverage of the monitor mask pattern, based on the first ratio and the projection light intensity distribution; dividing a design mask pattern into a plurality of unit areas; calculating a second ratio between the illumination light intensity on each of the unit areas and a second projection light intensity calculated based on the design mask pattern; and calculating a local flare intensity in each of the unit areas, based on the second ratio and the distribution function.

    摘要翻译: 一种用于评估曝光工具中的局部耀斑的方法,包括:通过将监视器掩模图案转移到半导体衬底上来测量投影光强度分布; 计算监视器掩模图案上的照明光强度与基于监视器掩模图案计算的第一投影光强度之间的第一比率; 基于第一比率和投影光强度分布,计算由于监视器掩模图案的掩模图案覆盖而导致的局部光晕的分布函数; 将设计掩模图案分割成多个单位区域; 计算每个单位区域上的照明光强度和基于设计掩模图案计算的第二投影光强度之间的第二比率; 以及基于第二比率和分布函数计算每个单位区域中的局部火炬强度。

    Mask pattern correcting method
    5.
    发明授权
    Mask pattern correcting method 有权
    掩模图案校正方法

    公开(公告)号:US08122385B2

    公开(公告)日:2012-02-21

    申请号:US12129167

    申请日:2008-05-29

    IPC分类号: G06F17/50

    CPC分类号: G03F1/36

    摘要: In a model-based OPC which makes a suitable mask correction for each mask pattern using an optical image intensity simulator, a mask pattern is divided into subregions and the model of optical image intensity simulation is changed according to the contents of the pattern in each subregion. When the minimum dimensions of the mask pattern are smaller than a specific threshold value set near the exposure wavelength, the region is calculated using a high-accuracy model and the other regions are calculated using a high-speed model.

    摘要翻译: 在基于模型的OPC中,使用光学图像强度模拟器对每个掩模图案进行适当的掩模校正,将掩模图案划分为子区域,并且根据每个子区域中的图案的内容来改变光学图像强度模拟模型 。 当掩模图案的最小尺寸小于在曝光波长附近设置的特定阈值时,使用高精度模型计算该区域,并且使用高速模型来计算其它区域。

    Inspection method and photomask
    6.
    发明授权
    Inspection method and photomask 失效
    检验方法和光掩模

    公开(公告)号:US07556896B2

    公开(公告)日:2009-07-07

    申请号:US11606121

    申请日:2006-11-30

    IPC分类号: G03F9/00

    CPC分类号: G03F7/70566 G03F7/706

    摘要: An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.

    摘要翻译: 一种检查方法,包括通过使用第一偏振曝光光在涂覆在第一晶片上的第一抗蚀膜上转印光掩模的像差测量单元的图像来获得投影光学系统的第一光学特性; 通过使用具有与第一曝光光不同的偏振状态的第二曝光光,将像差测量单元的图像转印在涂覆在第二晶片上的第二抗蚀剂膜上,从而获得投影光学系统的第二光学特性; 以及计算第一和第二光学特性之间的差。

    Inspection method and a photomask
    7.
    发明授权
    Inspection method and a photomask 失效
    检验方法和光掩模

    公开(公告)号:US07186485B2

    公开(公告)日:2007-03-06

    申请号:US10615228

    申请日:2003-07-09

    IPC分类号: G03F9/00 G03C5/00

    CPC分类号: G03F7/70566 G03F7/706

    摘要: An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.

    摘要翻译: 一种检查方法,包括通过使用第一偏振曝光光在涂覆在第一晶片上的第一抗蚀膜上转印光掩模的像差测量单元的图像来获得投影光学系统的第一光学特性; 通过使用具有与第一曝光光不同的偏振状态的第二曝光光,将像差测量单元的图像转印在涂覆在第二晶片上的第二抗蚀剂膜上,从而获得投影光学系统的第二光学特性; 以及计算第一和第二光学特性之间的差。

    System, method and program for generating mask data, exposure mask and semiconductor device in consideration of optical proximity effects
    8.
    发明授权
    System, method and program for generating mask data, exposure mask and semiconductor device in consideration of optical proximity effects 失效
    考虑到光学邻近效应,产生掩模数据,曝光掩模和半导体器件的系统,方法和程序

    公开(公告)号:US07716628B2

    公开(公告)日:2010-05-11

    申请号:US11298840

    申请日:2005-12-12

    IPC分类号: G06F17/50

    CPC分类号: G03F1/36 G03F1/68

    摘要: A system for generating mask data includes an extracting module extracting a block necessary to correct process proximity effects as a wide correction area from a plurality of blocks by comparing parameter, a wide correction data generator generating wide correction data to make the correction applied to the wide correction area, and a mask data generator generating mask data by applying the wide correction data to the wide correction area.

    摘要翻译: 一种用于生成掩模数据的系统,包括提取模块,通过比较参数,从多个块中提取校正过程邻近效应所需的块作为宽的校正区域;广泛的校正数据生成器,产生宽的校正数据,使校正应用于宽 校正区域,以及掩模数据生成器,通过将宽校正数据应用于宽校正区域来生成掩模数据。

    Inspection method and photomask
    9.
    发明申请
    Inspection method and photomask 失效
    检验方法和光掩模

    公开(公告)号:US20070071306A1

    公开(公告)日:2007-03-29

    申请号:US11606121

    申请日:2006-11-30

    IPC分类号: G03F1/00 G03C5/00 G06K9/00

    CPC分类号: G03F7/70566 G03F7/706

    摘要: An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.

    摘要翻译: 一种检查方法,包括通过使用第一偏振曝光光在涂覆在第一晶片上的第一抗蚀膜上转印光掩模的像差测量单元的图像来获得投影光学系统的第一光学特性; 通过使用具有与第一曝光光不同的偏振状态的第二曝光光,将像差测量单元的图像转印在涂覆在第二晶片上的第二抗蚀剂膜上,从而获得投影光学系统的第二光学特性; 以及计算第一和第二光学特性之间的差。

    Method of forming contact hole and method of manufacturing semiconductor device
    10.
    发明授权
    Method of forming contact hole and method of manufacturing semiconductor device 失效
    形成接触孔的方法和制造半导体器件的方法

    公开(公告)号:US07148138B2

    公开(公告)日:2006-12-12

    申请号:US10969996

    申请日:2004-10-22

    IPC分类号: H01L21/4763

    摘要: A method of forming a contact hole on a substrate by using a projection aligner comprising a lighting system including a light source, an aperture, and a condenser lens, a photo mask on which light from the lighting system is incident, and a projection lens for projecting the light from the photo mask onto the substrate, comprises forming a first photosensitive resist film on the substrate; exposing the first photosensitive resist film by using a photo mask in which mask patterns are cyclically arranged in a first direction and a second direction which is orthogonal to the first direction and a first aperture having light transmission parts arranged symmetrically with respect to a center point in the first direction; developing the exposed first photosensitive resist film to form first lines and linear spaces; forming a second photosensitive resist film on the substrate; exposing the second photosensitive resist film by using the photo mask and a second aperture having light transmission parts arranged symmetrically with respect to a center point in the second direction; and developing the second photosensitive resist film to form second lines and linear spaces which are orthogonal to the first lines and linear spaces.

    摘要翻译: 一种通过使用包括光源,孔径和聚光透镜的照明系统的投影对准器在基板上形成接触孔的方法,来自照明系统的光入射的光掩模和用于 将来自光掩模的光投射到基板上,包括在基板上形成第一光敏抗蚀剂膜; 通过使用掩模图案沿与第一方向正交的第一方向和第二方向循环布置的光掩模曝光第一光敏抗蚀剂膜,以及具有相对于中心点对称布置的光传输部分的第一孔 第一个方向 显影第一光敏抗蚀剂膜以形成第一线和线性空间; 在所述基板上形成第二光敏抗蚀剂膜; 通过使用光掩模曝光第二光敏抗蚀剂膜,并且具有相对于第二方向的中心点对称布置的透光部分的第二孔; 并显影第二光敏抗蚀剂膜以形成与第一线和线性空间正交的第二线和线性空间。