公开(公告)号：US07960075B2

公开(公告)日：2011-06-14

申请号：US11939030

申请日：2007-11-13

申请人： Satoshi Nagai ,  Kazuya Fukuhara ,  Masamitsu Itoh ,  Kenji Kawano ,  Satoshi Tanaka

发明人： Satoshi Nagai ,  Kazuya Fukuhara ,  Masamitsu Itoh ,  Kenji Kawano ,  Satoshi Tanaka

IPC分类号： G03F1/00 ,  G02B5/08

CPC分类号： G03F1/62 ,  G03F7/70158 ,  G03F7/70191

摘要： A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle θ (0°

摘要翻译： 光掩模单元包括具有以间距P布置的图案的掩模基板; 以及保护所述掩模基板的防护薄膜组件，其中，所述防护薄膜组件使得入射角的入射光的透射率; （0°<θ; <90°）高于入射角0°的入射光的透射率。

公开(公告)号：US20080124633A1

公开(公告)日：2008-05-29

申请号：US11939030

申请日：2007-11-13

申请人： Satoshi Nagai ,  Kazuya Fukuhara ,  Masamitsu Itoh ,  Kenji Kawano ,  Satoshi Tanaka

发明人： Satoshi Nagai ,  Kazuya Fukuhara ,  Masamitsu Itoh ,  Kenji Kawano ,  Satoshi Tanaka

IPC分类号： G03F1/00 ,  G03F7/20 ,  G03F7/26

CPC分类号： G03F1/62 ,  G03F7/70158 ,  G03F7/70191

摘要： A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle ↓(0°

摘要翻译： 光掩模单元包括具有以间距P布置的图案的掩模基板; 以及保护掩模基板的防护薄膜组件，其中防护薄膜组件使入射角↓（0°<90°）的入射光的透射率高于入射角0°的入射光的透射率。

公开(公告)号：US08142960B2

公开(公告)日：2012-03-27

申请号：US12536758

申请日：2009-08-06

申请人： Satoshi Nagai ,  Kazuya Fukuhara

发明人： Satoshi Nagai ,  Kazuya Fukuhara

IPC分类号： G03F9/00 ,  G06F17/50

CPC分类号： G03F7/70433

摘要： An exposure method has irradiating a mask with light based on an exposure performing condition, a first mask pattern and a second mask pattern being formed in the mask, and projecting images of the first mask pattern and second mask pattern onto a wafer through a projection lens, a lower-layer film material and a photoresist being sequentially laminated on the wafer, wherein the exposure performing condition is a condition on which, when exposure is performed on a predetermined exposure condition, the predetermined exposure condition is adjusted such that a difference between a wafer position at which a best focus is obtained for the image of the first mask pattern and a wafer position at which a best focus is obtained for the image of the second mask pattern falls within a predetermined range, the wafer position of the first mask pattern and the wafer position of the second mask pattern being predicted using film thicknesses and optical characteristics of the photoresist and the lower-layer film material.

摘要翻译： 曝光方法基于曝光执行条件照射具有光的掩模，在掩模中形成第一掩模图案和第二掩模图案，并且通过投影透镜将第一掩模图案和第二掩模图案的图像投影到晶片上 ，下层薄膜材料和光致抗蚀剂依次层压在晶片上，其中曝光执行条件是当在预定曝光条件下进行曝光时，调整预定曝光条件使得在 对于第一掩模图案的图像获得最佳聚焦的晶片位置和对于第二掩模图案的图像获得最佳聚焦的晶片位置落在预定范围内，第一掩模图案的晶片位置 并且使用光致抗蚀剂和下层的膜厚度和光学特性来预测第二掩模图案的晶片位置 层膜材料。

公开(公告)号：US20100144148A1

公开(公告)日：2010-06-10

申请号：US12613213

申请日：2009-11-05

申请人： Kazuya Fukuhara ,  Satoshi Nagai

发明人： Kazuya Fukuhara ,  Satoshi Nagai

IPC分类号： H01L21/308 ,  G06F17/50

CPC分类号： G03F7/70608

摘要： A semiconductor device manufacturing method includes designing a resist structure including a film having antireflection function for exposure light and a resist on the film to be formed on a substrate, designing an exposure condition of the resist obtained by exposing and developing the resist such that a resist pattern is finished as designed, obtaining criteria value for estimating influence of a resist pattern upon a dimension or shape of a device pattern, the resist pattern being obtained by exposing the resist under the designed exposure condition and developing the exposed resist, the device pattern being obtained by etching the resist structure using the resist pattern as a mask, determining whether the designed exposure condition is acceptable or not based on the criteria value, and redesigning the exposure condition of the resist without changing the designed resist structure when the designed exposure condition is determined not acceptable.

摘要翻译： 半导体器件制造方法包括设计包括具有用于曝光光的抗反射功能的膜的抗蚀剂结构和在要形成在衬底上的膜上的抗蚀剂，设计通过曝光和显影抗蚀剂获得的抗蚀剂的曝光条件，使得抗蚀剂 图案按照设计完成，获得用于估计抗蚀剂图案对器件图案的尺寸或形状的影响的标准值，抗蚀剂图案通过在设计的曝光条件下曝光抗蚀剂并显影曝光的抗蚀剂获得，器件图案为 通过使用抗蚀剂图案作为掩模蚀刻抗蚀剂结构而获得，基于标准值确定设计的曝光条件是否可接受，并且当设计的曝光条件为设计的曝光条件是否改变设计的抗蚀剂结构时，重新设计抗蚀剂的曝光条件 决定不接受。

公开(公告)号：US20100035167A1

公开(公告)日：2010-02-11

申请号：US12536758

申请日：2009-08-06

申请人： Satoshi Nagai ,  Kazuya Fukuhara

发明人： Satoshi Nagai ,  Kazuya Fukuhara

IPC分类号： G03F7/20 ,  G06F17/50

CPC分类号： G03F7/70433

摘要： An exposure method has irradiating a mask with light based on an exposure performing condition, a first mask pattern and a second mask pattern being formed in the mask, and projecting images of the first mask pattern and second mask pattern onto a wafer through a projection lens, a lower-layer film material and a photoresist being sequentially laminated on the wafer, wherein the exposure performing condition is a condition on which, when exposure is performed on a predetermined exposure condition, the predetermined exposure condition is adjusted such that a difference between a wafer position at which a best focus is obtained for the image of the first mask pattern and a wafer position at which a best focus is obtained for the image of the second mask pattern falls within a predetermined range, the wafer position of the first mask pattern and the wafer position of the second mask pattern being predicted using film thicknesses and optical characteristics of the photoresist and the lower-layer film material.

摘要翻译： 曝光方法基于曝光执行条件照射具有光的掩模，在掩模中形成第一掩模图案和第二掩模图案，并且通过投影透镜将第一掩模图案和第二掩模图案的图像投影到晶片上 ，下层薄膜材料和光致抗蚀剂依次层压在晶片上，其中曝光执行条件是当在预定曝光条件下进行曝光时，调整预定曝光条件使得在 对于第一掩模图案的图像获得最佳聚焦的晶片位置和对于第二掩模图案的图像获得最佳聚焦的晶片位置落在预定范围内，第一掩模图案的晶片位置 并且使用光致抗蚀剂和下层的膜厚度和光学特性来预测第二掩模图案的晶片位置 层膜材料。

公开(公告)号：US09062393B2

公开(公告)日：2015-06-23

申请号：US12994588

申请日：2009-05-26

申请人： Akira Ito ,  Satoshi Nagai

发明人： Akira Ito ,  Satoshi Nagai

IPC分类号： D04H1/54 ,  D01F6/62 ,  D04H3/14 ,  D01F8/14 ,  D01F8/16 ,  D04H1/541 ,  D04H1/559 ,  D04H13/00

CPC分类号： D01F8/14 ,  D01D5/34 ,  D01F8/16 ,  D04H1/541 ,  D04H1/559 ,  D04H13/007 ,  Y10T428/2913 ,  Y10T428/2929 ,  Y10T428/2933 ,  Y10T428/2964 ,  Y10T428/2969 ,  Y10T442/60 ,  Y10T442/608 ,  Y10T442/609 ,  Y10T442/637 ,  Y10T442/641 ,  Y10T442/69

摘要： The present invention has an object of providing a novel multilayer composite fiber using polyacetal mainly derived from methanol, which is a petroleum-independent raw material, and having a low environmental load, and also providing a nonwoven fabric obtained by thermally bonding such fibers. According to the present invention, a multilayer composite fiber comprising a resin containing polylactic acid as a main component and a resin containing polyacetal as a main component, in which the components both form continuous layers in an axial direction of the fiber, and also a nonwoven fabric obtained by thermally bonding such fibers, can be provided.

摘要翻译： 本发明的目的是提供一种使用主要来自甲醇的聚缩醛的新型多层复合纤维，该甲醇是不依赖石油的原料，环境负荷低，并且还提供了通过热粘合这种纤维得到的非织造织物。 根据本发明，包含聚乳酸作为主要成分的树脂和含有聚缩醛作为主要成分的树脂的多层复合纤维，其中两者在纤维的轴向方向上形成连续层，以及非织造布 可以提供通过热粘合这种纤维获得的织物。

公开(公告)号：US20130090877A1

公开(公告)日：2013-04-11

申请号：US13268248

申请日：2011-10-07

申请人： Satoshi Nagai

发明人： Satoshi Nagai

IPC分类号： G06F19/00

CPC分类号： G03F7/70633 ,  G03F9/7034

摘要： Described herein are methods and systems for aligning a wafer using a wafer leveling map with alignment marks. A set of alignment marks can be selected to create overlay correction parameters to realign the wafer. Alignment marks that are near wafer leveling hotspots, or alignment marks that have poor reproducibility are not selected for realignment purposes. The wafer leveling data is used to determine which alignment marks have poor reproducibility and can create an unstable offset. The wafer leveling data identifies areas on the wafer that are uneven. Only alignment marks which have a stable offset are used to calculate the associated overlay correction parameters.

摘要翻译： 这里描述了使用晶片调平图与对准标记对准晶片的方法和系统。 可以选择一组对准标记来创建重叠校正参数以重新对准晶片。 靠近晶片调平热点的对准标记或重复性差的对准标记未被选择用于重新对准。 晶圆调平数据用于确定哪些对准标记具有差的再现性，并可能产生不稳定的偏移。 晶片调平数据识别晶片上不均匀的区域。 仅使用具有稳定偏移的对准标记来计算相关联的重叠校正参数。

公开(公告)号：US20070032174A1

公开(公告)日：2007-02-08

申请号：US10555004

申请日：2004-04-28

申请人： Satoshi Nagai

发明人： Satoshi Nagai

IPC分类号： B24B7/30 ,  B24B1/00

CPC分类号： B24B37/16

摘要： The present invention relates to a polishing apparatus for polishing a workpiece such as a semiconductor wafer to form a flat surface thereon. The polishing apparatus includes a polishing table (20), a polishing tool (1) attached to an upper surface of the polishing table (20), and a fluid passage (40) having openings on the upper surface of the polishing table (20). The apparatus is operable to bring a workpiece (W) into sliding contact with the polishing tool (1) to polish the workpiece while supplying a polishing liquid onto the polishing tool (1). The polishing tool (1) is fixed to the polishing table (20) by a vacuum produced in the fluid passage (40).

摘要翻译： 本发明涉及一种抛光装置，用于抛光诸如半导体晶片的工件以在其上形成平坦表面。 抛光装置包括：研磨台（20），安装在研磨台（20）的上表面的研磨工具（1）和在研磨台（20）的上表面上具有开口的流体通道（40） 。 该装置可操作以使工件（W）与抛光工具（1）滑动接触，以在将抛光液体供应到抛光工具（1）上时抛光工件。 抛光工具（1）通过在流体通道（40）中产生的真空固定在抛光台（20）上。

公开(公告)号：US06359103B1

公开(公告)日：2002-03-19

申请号：US09639985

申请日：2000-08-17

申请人： Satoshi Nagai ,  Osamu Kondo ,  Kyohei Takakuwa ,  Yoshinori Isahaya ,  Takayasu Fujimori

发明人： Satoshi Nagai ,  Osamu Kondo ,  Kyohei Takakuwa ,  Yoshinori Isahaya ,  Takayasu Fujimori

IPC分类号： C08G6416

CPC分类号： C08G64/1608 ,  C08G64/30

摘要： An aromatic-aliphatic copolycarbonate and a process for producing the same which comprises polycondensation of an aromatic dihydroxy compound, such as 1,1-bis(4-hydroxyphenyl)cyclohexane, tricyclo(5.2.1.02,6)decanedimethanol, and a carbonic acid diester in a molten state under heating, wherein the carbonic acid diester has a chlorine content of 20 ppm or lower. The copolycarbonate has improved refractive index, balance of dispersion, and photoelastic constant while retaining high impact resistance, high heat resistance, and excellent hue.

摘要翻译： 芳香族 - 脂肪族共聚碳酸酯及其制造方法，其包括芳族二羟基化合物如1,1-双（4-羟基苯基）环己烷，三环（5.2.1.0 2,6）癸烷二甲醇和碳酸二酯的缩聚 在加热下处于熔融状态，其中碳酸二酯的氯含量为20ppm以下。 共聚碳酸酯具有改善的折射率，平衡分散和光弹性常数，同时保持高耐冲击性，高耐热性和优异的色调。

公开(公告)号：US5952793A

公开(公告)日：1999-09-14

申请号：US816051

申请日：1997-03-11

申请人： Kenichiro Nishi ,  Satoshi Nagai ,  Kentaro Eguchi ,  Takeshi Arai ,  Jun Bunya ,  Kazutaka Shimizu ,  Koji Shibata ,  Isamu Ogawa

发明人： Kenichiro Nishi ,  Satoshi Nagai ,  Kentaro Eguchi ,  Takeshi Arai ,  Jun Bunya ,  Kazutaka Shimizu ,  Koji Shibata ,  Isamu Ogawa

IPC分类号： H05B37/03 ,  H05B41/285 ,  H05B41/292 ,  H05B41/392 ,  H05B37/02

CPC分类号： H05B41/2851 ,  H05B37/03 ,  H05B41/2855 ,  H05B41/2925 ,  H05B41/3921 ,  Y02B20/208 ,  Y10S315/04

摘要： A current flowing through a discharge lamp 4 is detected by a current detecting circuit 5, and the detected current is outputted as a lamp current signal A to a feedback control circuit 7 where a difference between the lamp current signal A and the dimming control signal B is obtained and amplified, and then a simplified signal D is outputted to an adder 12 which adds the amplified signal D to the dimming control signal B to constitute a control signal E. The control signal is fed back to a high frequency power supply 2. When a comparing circuit 15 detects that the light level of the dimming control signal B with respect to the full light becomes higher than or equal to 40% to 60%, the feedback circuit is disconnected by operating a switch 13 provided between an error amplifying circuit 9 and an adder 12 to stop the feedback control.

摘要翻译： 通过电流检测电路5检测流过放电灯4的电流，将检测电流作为灯电流信号A输出到反馈控制电路7，反馈控制电路7将灯电流信号A与调光控制信号B 并且然后将简化信号D输出到加法器12，加法器12将放大的信号D加到调光控制信号B以构成控制信号E.控制信号反馈给高频电源2。 当比较电路15检测到调光控制信号B相对于全光的光电平变得高于或等于40％至60％时，通过操作设置在误差放大电路之间的开关13来断开反馈电路， 9和加法器12，以停止反馈控制。