摘要:
A process is disclosed for depositing tungsten non-selectively on conductors and dielectrics without the use of an adhesive interlayer. The process comprises an argon pre-treatment followed by low power plasma deposition to nucleate the tungsten. A thick, adherent layer of tungsten is then deposited.
摘要:
A process for forming a bonding layer comprising amorphous silicon, titanium, chromium, or tungsten, between the silicide and the N+ polysilicon layer is disclosed. The bonding layer is preferably less than 50 nm. thick. After the bonding layer is deposited, a silicide layer is deposited and the wafer is then sintered at 900.degree.-1000.degree. C. for ten minutes or less.
摘要:
A process is disclosed for reducing lateral encroachment and silicon consumption in LPCVD of tungsten. The process comprises a low temperature deposition of a thin layer of tungsten, followed by annealing in nitrogen at high temperature, follows by deposition of a thick layer of tungsten.
摘要:
A copper interconnect polishing process begins by polishing (17) a bulk thickness of copper (63) using a first platen. A second platen is then used to remove (19) a thin remaining interfacial copper layer to expose a barrier film (61). Computer control (21) monitors polish times of the first and second platen and adjusts these times to improve wafer throughput. One or more platens and/or the wafer is rinsed (20) between the interfacial copper polish and the barrier polish to reduce slurry cross contamination. A third platen and slurry is then used to polish away exposed portions of the barrier (61) to complete polishing of the copper interconnect structure. A holding tank that contains anti-corrosive fluid is used to queue the wafers until subsequent scrubbing operations (25). A scrubbing operation (25) that is substantially void of light is used to reduce photovoltaic induced corrosion of copper in the drying chamber of the scubber.
摘要:
A copper interconnect polishing process begins by polishing (17) a bulk thickness of copper (63) using a first platen. A second platen is then used to remove (19) a thin remaining interfacial copper layer to expose a barrier film (61). Computer control (21) monitors polish times of the first and second platen and adjusts these times to improve wafer throughput. One or more platens and/or the wafer is rinsed (20) between the interfacial copper polish and the barrier polish to reduce slurry cross contamination. A third platen and slurry is then used to polish away exposed portions of the barrier (61) to complete polishing of the copper interconnect structure. A holding tank that contains anti-corrosive fluid is used to queue the wafers until subsequent scrubbing operations (25). A scrubbing operation (25) that is substantially void of light is used to reduce photovoltaic induced corrosion of copper in the drying chamber of the scrubber.
摘要:
A method for providing security for a network intrusion detection system in a provisionable network, the method comprises evaluating the system security of the provisionable network and applying a system lockdown in the provisionable network in accordance with the results of the evaluation.
摘要:
A method and system for processing concurrent events in a provisional network that comprises a plurality of dynamically allocatable nodes. Specifically, the method includes receiving notification of an event associated with a node in the provisional network. The event requires processing a new lifecycle operation to update a status of the node in the provisional network. Then, it is determined whether the node is locked for processing an active lifecycle operation that is associated with a concurrent event for the node. Processing of the new lifecycle operation is suspended until the active lifecycle operation has terminated, if the node is locked. The lock is maintained on the node after the active lifecycle operation has terminated. Thereafter, the new lifecycle operation is processed when the active lifecycle operation has terminated.
摘要:
A method of managing utilization of network intrusion detection systems in a dynamic data center is provided. A plurality of network intrusion detection systems are provided, each being networked so that utilization of each network intrusion detection system can be based on demand for the network intrusion detection systems in the dynamic data center. A monitoring policy and a plurality of monitoring points to be monitored on a network with any of the network intrusion detection systems are received. Further, the monitoring of the monitoring points is automatically arranged using the network intrusion detection systems and the monitoring policy.
摘要:
A copper interconnect polishing process begins by polishing (17) a bulk thickness of copper (63) using a first platen. A second platen is then used to remove (19) a thin remaining interfacial copper layer to expose a barrier film (61). Computer control (21) monitors polish times of the first and second platen and adjusts these times to improve wafer throughput. One or more platens and/or the wafer is rinsed (20) between the interfacial copper polish and the barrier polish to reduce slurry cross contamination. A third platen and slurry is then used to polish away exposed portions of the barrier (61) to complete polishing of the copper interconnect structure. A holding tank that contains anti-corrosive fluid is used to queue the wafers until subsequent scrubbing operations (25). A scrubbing operation (25) that is substantially void of light is used to reduce photovoltaic induced corrosion of copper in the drying chamber of the scubber.
摘要:
Disclosed is a system for protecting security of a provisionable network, comprising: a network server, a network client communicatively coupled with the server, a pool of resources coupled with the server for employment by the client, a resource management system for managing the resources, and an intrusion detection system enabled to detect and respond to an intrusion in said network.