利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.012 秒)

    Chemical vapor deposition reactor and process
    2.
    发明授权
    Chemical vapor deposition reactor and process 失效
    化学气相沉积反应器及工艺

    公开(公告)号：US4232063A

    公开(公告)日：1980-11-04

    申请号：US960594

    申请日：1978-11-14

    申请人： Richard S. Rosler ,  Robert W. East

    发明人： Richard S. Rosler ,  Robert W. East

    IPC分类号： C23C16/44 ,  C23C16/455 ,  B05D5/12 ,  B05C13/00

    CPC分类号： C23C16/455 ,  C23C16/45591

    摘要： Apparatus and process for depositing materials such as Si.sub.3 N.sub.4 and SiO.sub.2 on semiconductor wafers in a hot-wall reactor. A perforated distribution tube is positioned in the reaction chamber, and the wafers are placed inside the tube. Reactant gases are introduced into the chamber outside the tube and pass to the wafers through the openings in the tube.

    摘要翻译： 用于在热壁反应器中在半导体晶片上沉积诸如Si 3 N 4和SiO 2的材料的装置和工艺。 穿孔分布管位于反应室中，晶片放置在管内。 将反应物气体引入管外部的室中，并通过管中的开口传递到晶片。

    Plasma deposition of silicon
    4.
    发明授权
    Plasma deposition of silicon 失效
    硅的等离子体沉积

    公开(公告)号：US4401687A

    公开(公告)日：1983-08-30

    申请号：US320451

    申请日：1981-11-12

    申请人： Richard S. Rosler ,  George M. Engle

    发明人： Richard S. Rosler ,  George M. Engle

    IPC分类号： C01B33/02 ,  C01B33/03 ,  C23C16/24 ,  C30B25/02 ,  H01L21/205 ,  B05D5/12

    CPC分类号： C30B29/06 ,  C23C16/24 ,  C30B25/02

    摘要： Method for plasma deposition of silicon from a silicon source gas. By inclusion of a halogen species in the gas flow stream, thermally induced deposition is inhibited so that plasma decomposition predominates. The silicon gas source may comprise the halogen species, which may alternatively be under separate control. The suppression of thermally induced deposition leads to improved thickness uniformity across the workpieces for significantly increased lifetime or runtime without the conductive plates shorting together.

    摘要翻译： 从硅源气体等离子体沉积硅的方法。 通过在气流中包含卤素物质，抑制热诱导沉积，使得等离子体分解占优势。 硅气体源可以包括卤素物质，其可以替代地在单独的控制下。 热诱导沉积的抑制导致改善整个工件的厚度均匀性，从而显着增加寿命或运行时间，而导电板一起短路。

    Reduced pressure induction heated reactor and method
    5.
    发明授权
    Reduced pressure induction heated reactor and method 失效
    减压感应加热反应器及方法

    公开(公告)号：US4263336A

    公开(公告)日：1981-04-21

    申请号：US98098

    申请日：1979-11-23

    申请人： Stephen W. Thompson ,  Harry G. Smith ,  Richard S. Rosler

    发明人： Stephen W. Thompson ,  Harry G. Smith ,  Richard S. Rosler

    IPC分类号： C23C16/46 ,  C30B25/10 ,  C23C11/06

    CPC分类号： C30B25/10 ,  C23C16/46

    摘要： A reduced pressure induction heated reactor and method for the deposition, especially epitaxial deposition, onto workpieces placed in the reactor. The workpieces are positioned within a hollow susceptor which is, in turn, positioned within a reactor tube. The ends of the reactor tube are sealed by end caps which provide for input and exhaust of reactant species. The workpieces are inductively heated by an RF induction coil which surrounds the reactor tube and which inductively couples with the susceptor. A vacuum pump maintains a low pressure within the reactor tube. Low pressure deposition is made possible without arcing by shorting together the susceptor and end caps and by having the shorted together combination electrically floating.

    摘要翻译： 一种减压感应加热反应器和用于在放置在反应器中的工件上沉积，特别是外延沉积的方法。 工件位于中空基座内，中空基座又位于反应器管内。 反应器管的端部由提供反应物种类的输入和排出的端盖密封。 工件由围绕反应器管的RF感应线圈感应加热，并且与感受器感应耦合。 真空泵在反应器管内保持低压。 通过将基座和端盖短接在一起，并且使短路在一起的组合电浮动，可以实现低压沉积。

    Apparatus for processing semiconductor wafers or the like
    6.
    发明授权
    Apparatus for processing semiconductor wafers or the like 失效
    用于处理半导体晶片等的装置

    公开(公告)号：US4610748A

    公开(公告)日：1986-09-09

    申请号：US679898

    申请日：1984-12-10

    申请人： George M. Engle ,  Richard S. Rosler

    发明人： George M. Engle ,  Richard S. Rosler

    IPC分类号： H01L21/205 ,  B05C13/02 ,  H01L21/285 ,  H01L21/31 ,  H01L21/673 ,  B44C1/22 ,  B05B5/02 ,  C23C14/00 ,  C23F1/00

    CPC分类号： H01L21/67313 ,  B05C13/02 ,  H01L21/67316

    摘要： A disk boat assembly for holding workpieces to be processed within a chemical reaction processing apparatus during the chemical vapor process. The boat assembly includes a pair of electrically conductive rail members held rigidly and radially apart between two dielectric end holding members that electrically isolate the two rail members. A plurality of disk like plates are connected respectively to the two rail members and are interleaved such that adjacent disk plates are electrically isolated. Each disk plate includes pairs of bores formed therein with each pair extending radially outward from the center of the disk. Insertable pins are placed in a respective pair of bores, the distance therebetween of which can be extended by insertion in an additional pair of bores lying further from the center of the disk so that variable diameter workpieces can be held on the broad surfaces of each disk plate.

    摘要翻译： 一种用于在化学气相处理期间保持在化学反应处理装置内处理的工件的盘式船组件。 船组件包括一对导电轨道构件，其牢固且径向地保持在两个绝缘端部保持构件之间，两个电介质端部保持构件将两个轨道构件电隔离。 多个盘状板分别连接到两个轨道构件并被交错，使得相邻的盘片电隔离。 每个盘片包括成对的孔，每对孔从盘的中心径向向外延伸。 可插入的销被放置在相应的一对孔中，它们之间的距离可以通过插入在距离盘的中心更远的另外一对孔中而延伸，使得可变径的工件可以保持在每个盘的宽表面上 盘子。

    Spacer for preventing shorting between conductive plates
    8.
    发明授权
    Spacer for preventing shorting between conductive plates 失效
    隔板用于防止导电板之间的短路

    公开(公告)号：US4491606A

    公开(公告)日：1985-01-01

    申请号：US492545

    申请日：1983-05-09

    申请人： Richard S. Rosler ,  George M. Engle

    发明人： Richard S. Rosler ,  George M. Engle

    IPC分类号： C23C16/509 ,  H01J37/32 ,  C23C13/08 ,  C23C13/04

    CPC分类号： H01J37/32568 ,  C23C16/509 ,  H01J37/32 ,  H01J2237/3321

    摘要： An improved spacer means for separating and inhibiting the shorting together of conductive plates in an RF plasma reactor used in Plasma Enhanced Chemical Vapor Deposition (PECVD) processing of semiconductor devices. The improved spacer means inhibits the accumulation of conductive films on the surface of the separating means by substantially precluding the plasma field, and hence, inhibiting depositions in areas where recessed grooves are in the surface of the separating means. Accordingly, a direct electrical path on the spacer means between the multiple conductive plates of the RF plasma reactor is inhibited. As a result, the reactors can run for longer periods of time and deposit greater thicknesses of conductive films without the conductive plates shorting together causing shutdown of the process.

    摘要翻译： 用于在用于半导体器件的等离子体增强化学气相沉积（PECVD）处理中的RF等离子体反应器中分离和抑制导电板的短路的改进的隔离装置。 改进的间隔装置通过基本上排除等离子体场，从而抑制在分离装置的表面上的导电膜的积累，并因此抑制在分离装置的表面中的凹槽的区域中的沉积。 因此，RF等离子体反应器的多个导电板之间的隔离件装置上的直接电路被禁止。 因此，反应器可以运行更长的时间，并且沉积更大厚度的导电膜，而不会导致导电板短路在一起导致该过程的关闭。