公开(公告)号：US4777061A

公开(公告)日：1988-10-11

申请号：US132739

申请日：1987-12-14

申请人： Schyi-yi Wu ,  J. B. Price ,  John Mendonca ,  Yu Chang Chow

发明人： Schyi-yi Wu ,  J. B. Price ,  John Mendonca ,  Yu Chang Chow

IPC分类号： C23C16/14 ,  C23C16/50 ,  B05D3/06

CPC分类号： C23C16/14

摘要： A process is disclosed for depositing tungsten non-selectively on conductors and dielectrics without the use of an adhesive interlayer. The process comprises an argon pre-treatment followed by low power plasma deposition to nucleate the tungsten. A thick, adherent layer of tungsten is then deposited.

摘要翻译： 公开了一种在不使用粘合剂中间层的情况下在导体和电介质上非选择性地沉积钨的方法。 该方法包括氩预处理，随后进行低功率等离子体沉积以使钨成核。 然后沉积厚的粘附层钨。

公开(公告)号：US4737474A

公开(公告)日：1988-04-12

申请号：US931479

申请日：1986-11-17

申请人： J. B. Price ,  Yu C. Chow ,  John Mendonca ,  Schyi-Yi Wu

发明人： J. B. Price ,  Yu C. Chow ,  John Mendonca ,  Schyi-Yi Wu

IPC分类号： H01L21/3205 ,  H01L21/28 ,  H01L23/52 ,  H01L29/78

CPC分类号： H01L21/28026 ,  H01L21/28061 ,  Y10S148/147

摘要： A process for forming a bonding layer comprising amorphous silicon, titanium, chromium, or tungsten, between the silicide and the N+ polysilicon layer is disclosed. The bonding layer is preferably less than 50 nm. thick. After the bonding layer is deposited, a silicide layer is deposited and the wafer is then sintered at 900.degree.-1000.degree. C. for ten minutes or less.

公开(公告)号：US4692343A

公开(公告)日：1987-09-08

申请号：US861793

申请日：1986-05-12

申请人： J. B. Price ,  Schyi-Yi Wu

发明人： J. B. Price ,  Schyi-Yi Wu

IPC分类号： C23C16/48 ,  B05D3/06

CPC分类号： C23C16/481

摘要： Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.

摘要翻译： 在具有用于辐射加热晶片的多个灯的等离子体反应器中获得在半导体晶片上的化学气相沉积。 使用远离晶片的校准温度感测装置来控制晶片的加热。 气体通过从腔室的侧面径向向内延伸的多个管道供给。 提供挡板以形成有助于沉积的均匀性的前室。 等离子体点火少于整个沉积循环以沉积二硅化钨。

公开(公告)号：US4749597A

公开(公告)日：1988-06-07

申请号：US109635

申请日：1987-10-19

申请人： John Mendonca ,  J. B. Price ,  Richard S. Rosler

发明人： John Mendonca ,  J. B. Price ,  Richard S. Rosler

IPC分类号： C23C16/02 ,  C23C16/56 ,  H01L21/285 ,  C23C16/08

CPC分类号： C23C16/56 ,  C23C16/0281 ,  H01L21/28568

摘要： A process is disclosed for reducing lateral encroachment and silicon consumption in LPCVD of tungsten. The process comprises a low temperature deposition of a thin layer of tungsten, followed by annealing in nitrogen at high temperature, follows by deposition of a thick layer of tungsten.

摘要翻译： 公开了一种减少钨的LPCVD中的横向侵蚀和硅消耗的方法。 该方法包括钨的薄层的低温沉积，然后在氮气中在高温下进行退火，随后沉积厚层的钨。

公开(公告)号：US10163667B2

公开(公告)日：2018-12-25

申请号：US12054160

申请日：2008-03-24

申请人： J. B. Price ,  Jed Keller ,  Laurence Dulmage ,  David Adams ,  Eric Winger ,  Lawrence Wise

发明人： J. B. Price ,  Jed Keller ,  Laurence Dulmage ,  David Adams ,  Eric Winger ,  Lawrence Wise

IPC分类号： B65G29/00 ,  H01L21/67 ,  H01L21/677

摘要： A modular cluster tool is disclosed. According to one embodiment, a system, comprises a wafer transfer station that includes a first vacuum chamber that stores a plurality of semiconductor wafers. The system also includes an equipment front end module interface, and two or more shuttle lock interfaces.

公开(公告)号：US4570328A

公开(公告)日：1986-02-18

申请号：US472517

申请日：1983-03-07

申请人： J. B. Price ,  Philip J. Tobin ,  Fabio Pintchovski ,  Christian A. Seelbach

发明人： J. B. Price ,  Philip J. Tobin ,  Fabio Pintchovski ,  Christian A. Seelbach

IPC分类号： H01L29/78 ,  H01L21/318 ,  H01L21/3205 ,  H01L23/532 ,  H01L29/49 ,  H01L21/285 ,  H01L21/322

CPC分类号： H01L21/32051 ,  H01L21/318 ,  H01L23/53257 ,  H01L29/4925 ,  H01L29/4966 ,  H01L2924/0002 ,  Y10S148/019 ,  Y10S148/02 ,  Y10S148/113 ,  Y10S148/147 ,  Y10S438/971

摘要： An MOS device having a gate electrode and interconnect of titanium nitride and especially titanium nitride which is formed by low pressure chemical vapor deposition. In a more specific embodiment the titanium nitride gate electrode and interconnect have a silicon layer thereover to improve oxidation protection.

摘要翻译： 具有栅极的MOS器件和通过低压化学气相沉积形成的氮化钛特别是氮化钛的互连。 在更具体的实施例中，氮化钛栅电极和互连件具有其上的硅层以改善氧化保护。

公开(公告)号：US4632057A

公开(公告)日：1986-12-30

申请号：US762231

申请日：1985-08-05

申请人： J. B. Price ,  Matthew L. Bunch ,  Robert W. Stitz

发明人： J. B. Price ,  Matthew L. Bunch ,  Robert W. Stitz

IPC分类号： C23C16/50 ,  C23C16/48 ,  C23C16/509 ,  H01L21/205 ,  H01L21/31 ,  C23C13/04

CPC分类号： C23C16/5096 ,  C23C16/481

摘要： Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.

摘要翻译： 在具有用于辐射加热晶片的多个灯的等离子体反应器中获得在半导体晶片上的化学气相沉积。 使用远离晶片的校准温度感测装置来控制晶片的加热。 气体通过从腔室的侧面径向向内延伸的多个管道供给。 提供挡板以形成有助于沉积的均匀性的前室。 等离子体点火少于整个沉积循环以沉积二硅化钨。

公开(公告)号：US4605947A

公开(公告)日：1986-08-12

申请号：US779533

申请日：1985-09-24

申请人： J. B. Price ,  Philip J. Tobin ,  Fabio Pintchovski ,  Christian A. Seelbach

发明人： J. B. Price ,  Philip J. Tobin ,  Fabio Pintchovski ,  Christian A. Seelbach

IPC分类号： H01L21/318 ,  H01L21/3205 ,  H01L23/532 ,  H01L29/49 ,  H01L29/78 ,  H01L23/50 ,  H01L23/52 ,  H01L29/62

CPC分类号： H01L23/53257 ,  H01L21/318 ,  H01L21/32051 ,  H01L29/4925 ,  H01L29/4966 ,  H01L2924/0002

摘要： An MOS device having a gate electrode and interconnect of titanium nitride and especially titanium nitride which is formed by low pressure chemical vapor deposition. In a more specific embodiment the titanium nitride gate electrode and interconnect have a silicon layer thereover to improve oxidation protection.

摘要翻译： 具有栅极的MOS器件和通过低压化学气相沉积形成的氮化钛特别是氮化钛的互连。 在更具体的实施例中，氮化钛栅电极和互连件具有其上的硅层以改善氧化保护。

公开(公告)号：US4966869A

公开(公告)日：1990-10-30

申请号：US519538

申请日：1990-05-04

申请人： Joseph T. Hillman ,  J. B. Price ,  William M. Triggs

发明人： Joseph T. Hillman ,  J. B. Price ,  William M. Triggs

IPC分类号： C23C16/42 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205

CPC分类号： C23C16/42 ,  H01L21/28518 ,  H01L21/32053 ,  Y10S148/147

摘要： Tungsten disilicide (WSi.sub.x) films are deposited onto doped or undoped polysilicon by reducing WF.sub.6 with a mixture of dichlorosilane (SiH.sub.2 Cl.sub.2) and disilane (Si.sub.2 H.sub.6). The addition of disilane provides a mechanism for increasing the resistivity (silicon to tungsten ratio) of the film without adversely affecting the uniformity or deposition rate of the film. A high silicon to tungsten ratio prevents degradation of the silicide film and the underlaying polysilicon film during subsequent growth of an oxide (SiO.sub.2) dielectric. The excess silicon in the film also provides desirable etching and annealing characteristics.

摘要翻译： 通过用二氯硅烷（SiH 2 Cl 2）和乙硅烷（Si 2 H 6）的混合物还原WF 6，将二硅化钨（WSix）膜沉积到掺杂或未掺杂的多晶硅上。 添加乙硅烷提供了提高膜的电阻率（硅与钨比）的机理，而不会不利地影响膜的均匀性或沉积速率。 高硅比可以防止在氧化物（SiO 2）电介质的后续生长期间硅化物膜和底层多晶硅膜的劣化。 膜中的多余的硅还提供了理想的蚀刻和退火特性。

公开(公告)号：US4870245A

公开(公告)日：1989-09-26

申请号：US718751

申请日：1985-04-01

申请人： J. B. Price ,  Edwin E. Reed ,  James L. Rutledge

发明人： J. B. Price ,  Edwin E. Reed ,  James L. Rutledge

IPC分类号： H01J37/32

CPC分类号： H01J37/32091 ,  H01J37/32522 ,  H01J2237/3387

摘要： Apparatus for the nitridiation of a silicon-bearing substrate is disclosed. The apparatus includes a double walled reaction vessel having first and second concentric walls bounding a reaction volume. Temperature of the reaction volume is controlled by resistance heaters located outside the outermost of the two concentric tubes. Plasma electrodes are positioned about the reaction volume and between the two concentric tubes. The ambient between the two tubes is controlled to protect the electrodes from oxidation at the high temperatures to which they are exposed. An rf generator is coupled to the plasma electrodes and is controllable independently from the resistance heaters.

摘要翻译： 公开了一种用于氮化含硅衬底的装置。 该装置包括具有界定反应体积的第一和第二同心壁的双壁反应容器。 反应体积的温度由位于两个同心管最外面的电阻加热器控制。 等离子体电极围绕反应体积和两个同心管之间定位。 控制两个管之间的环境以保护电极在它们暴露的高温下免于氧化。 rf发生器耦合到等离子体电极并且可独立于电阻加热器控制。