Abstract:
A circuit includes an amplifier having an input and an output; and at least one transistor comprising at least one terminal and at least one isolated well. The input of the amplifier is electrically connected to the at least one terminal of the transistor; and the output of the amplifier is electrically connected to the at least one isolated well of the at least one transistor.
Abstract:
Spectrum analyzer circuits and methods are provided which implement “zero-IF” (direct conversion) or “near-zero IF” (or very low IF) architectures that enable implementation of integrated (on-chip) spectrum analyzers for measuring the frequency spectrum of internal chip signals. An integrated spectrum analyzer circuit, which comprises a zero IF or near-zero IF framework, enables a low-power compact design with sufficient resolution bandwidth for on-chip implementation and diagnostics of internal chip signals.
Abstract:
Circuits and methods are provided for building integrated transformer-coupled amplifiers with on-chip transformers that are designed to resonate or otherwise tune parasitic capacitances to achieve frequency tuning of amplifiers at millimeter wave operating frequencies.
Abstract:
An apparatus and method to control signal phase in a radio device includes a phase rotator configured to control a phase of a local oscillator. A phase error determination module is configured to determine phase error information based on received in-phase (I) and quadrature (Q) (IQ) signal values. A phase correction module is configured to derive from the received IQ signal values a correction signal and apply the correction signal to the phase rotator in a path of the local oscillator.
Abstract:
Spectrum analyzer circuits and methods are provided which implement “zero-IF” (direct conversion) or “near-zero IF” (or very low IF) architectures that enable implementation of integrated (on-chip) spectrum analyzers for measuring the frequency spectrum of internal chip signals. An integrated spectrum analyzer circuit, which includes a zero IF or near-zero IF framework, enables a low-power compact design with sufficient resolution bandwidth for on-chip implementation and diagnostics of internal chip signals.
Abstract:
A circuit includes an amplifier having an input and an output; and at least one transistor comprising at least one terminal and at least one isolated well. The input of the amplifier is electrically connected to the at least one terminal of the transistor; and the output of the amplifier is electrically connected to the at least one isolated well of the at least one transistor.
Abstract:
Radio frequency integrated circuits with on-chip noise source for use in the performance of tests and/or calibrations. For example, a radio frequency integrated circuit comprises at least one noise source residing on the radio frequency integrated circuit, the noise source being controllable by a digital input, and a radio frequency circuit residing on the radio frequency integrated circuit and being coupled to the noise source, wherein at least one attribute of the radio frequency circuit is determinable by controlling the noise source via the digital input.
Abstract:
Circuits and methods are provided for building integrated transformer-coupled amplifiers with on-chip transformers that are designed to resonate or otherwise tune parasitic capacitances to achieve frequency tuning of amplifiers at millimeter wave operating frequencies.
Abstract:
Spectrum analyzer circuits and methods are provided which implement “zero-IF” (direct conversion) or “near-zero IF” (or very low IF) architectures that enable implementation of integrated (on-chip) spectrum analyzers for measuring the frequency spectrum of internal chip signals. An integrated spectrum analyzer circuit, which includes a zero IF or near-zero IF framework, enables a low-power compact design with sufficient resolution bandwidth for on-chip implementation and diagnostics of internal chip signals.
Abstract:
Circuits and methods are provided for implementing highly efficient switch-mode power amplifiers using BJTs (bipolar junction transistors) as active switching devices at millimeter-wave frequencies. More specifically, circuits and methods are provided for driving power amplifiers with BJT switching devices to achieve highly efficient switch-mode (e.g., Class E) operation at millimeter wave frequencies (e.g., 60 GHz).