公开(公告)号：US08728721B2

公开(公告)日：2014-05-20

申请号：US13205004

申请日：2011-08-08

申请人： Scott L. Light ,  Kaveri Jain ,  Zishu Zhang ,  Anton J deVilliers ,  Dan Millward ,  Jianming Zhou ,  Michael D. Hyatt

发明人： Scott L. Light ,  Kaveri Jain ,  Zishu Zhang ,  Anton J deVilliers ,  Dan Millward ,  Jianming Zhou ,  Michael D. Hyatt

IPC分类号： G03F7/20

CPC分类号： G03F7/0035

摘要： A method of processing a substrate includes forming first photoresist on a substrate. A portion of the first photoresist is selectively exposed to actinic energy and then the first photoresist is negative tone developed to remove an unexposed portion of the first photoresist. Second photoresist is formed on the substrate over the developed first photoresist. A portion of the second photoresist is selectively exposed to actinic energy and then the second photoresist is negative tone developed to remove an unexposed portion of the second photoresist and form a pattern on the substrate which comprises the developed first photoresist and the developed second photoresist. Other implementations are disclosed.

摘要翻译： 一种处理衬底的方法包括在衬底上形成第一光致抗蚀剂。 第一光致抗蚀剂的一部分选择性地暴露于光化能，然后第一光致抗蚀剂显影为负色调以除去第一光致抗蚀剂的未曝光部分。 在显影的第一光致抗蚀剂上的基底上形成第二光致抗蚀剂。 第二光致抗蚀剂的一部分选择性地暴露于光化能，然后第二光致抗蚀剂显色以除去第二光致抗蚀剂的未曝光部分，并在包含显影的第一光致抗蚀剂和显影的第二光致抗蚀剂的基板上形成图案。 公开了其他实现。

公开(公告)号：US20130040245A1

公开(公告)日：2013-02-14

申请号：US13205004

申请日：2011-08-08

申请人： Scott L. Light ,  Kaveri Jain ,  Zishu Zhang ,  Anton J. de Villiers ,  Dan Millward ,  Jianming Zhou ,  Michael D. Hyatt

发明人： Scott L. Light ,  Kaveri Jain ,  Zishu Zhang ,  Anton J. de Villiers ,  Dan Millward ,  Jianming Zhou ,  Michael D. Hyatt

IPC分类号： G03F7/20

CPC分类号： G03F7/0035

摘要： A method of processing a substrate includes forming first photoresist on a substrate. A portion of the first photoresist is selectively exposed to actinic energy and then the first photoresist is negative tone developed to remove an unexposed portion of the first photoresist. Second photoresist is formed on the substrate over the developed first photoresist. A portion of the second photoresist is selectively exposed to actinic energy and then the second photoresist is negative tone developed to remove an unexposed portion of the second photoresist and form a pattern on the substrate which comprises the developed first photoresist and the developed second photoresist. Other implementations are disclosed.

摘要翻译： 一种处理衬底的方法包括在衬底上形成第一光致抗蚀剂。 第一光致抗蚀剂的一部分选择性地暴露于光化能，然后第一光致抗蚀剂显影为负色调以除去第一光致抗蚀剂的未曝光部分。 在显影的第一光致抗蚀剂上的基底上形成第二光致抗蚀剂。 第二光致抗蚀剂的一部分选择性地暴露于光化能，然后第二光致抗蚀剂显色以除去第二光致抗蚀剂的未曝光部分，并在包含显影的第一光致抗蚀剂和显影的第二光致抗蚀剂的基板上形成图案。 公开了其他实现。

公开(公告)号：US20130295335A1

公开(公告)日：2013-11-07

申请号：US13463468

申请日：2012-05-03

申请人： Vishal Sipani ,  David A. Kewley ,  Kyle Armstrong ,  Michael Dean Van Patten ,  Michael D. Hyatt

发明人： Vishal Sipani ,  David A. Kewley ,  Kyle Armstrong ,  Michael Dean Van Patten ,  Michael D. Hyatt

IPC分类号： B32B3/30 ,  B44C1/22 ,  B05D5/00

CPC分类号： B32B3/30 ,  G03F7/0035 ,  G03F7/2002 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/31144 ,  Y10T428/24521 ,  Y10T428/24612

摘要： Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.

公开(公告)号：US09102121B2

公开(公告)日：2015-08-11

申请号：US13463468

申请日：2012-05-03

申请人： Vishal Sipani ,  David A. Kewley ,  Kyle Armstrong ,  Michael Dean Van Patten ,  Michael D. Hyatt

发明人： Vishal Sipani ,  David A. Kewley ,  Kyle Armstrong ,  Michael Dean Van Patten ,  Michael D. Hyatt

IPC分类号： G03F7/20 ,  B32B3/30 ,  G03F7/00 ,  G03F7/40 ,  H01L21/311

CPC分类号： B32B3/30 ,  G03F7/0035 ,  G03F7/2002 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/31144 ,  Y10T428/24521 ,  Y10T428/24612

摘要： Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.

摘要翻译： 衬底和在衬底上形成图案的方法。 图案包括重复图案区域和与重复图案区域相邻的图案中断区域。 在衬底上形成掩模，其中掩模包括重复图案区域和图案中断区域，并且使用两个单独的掩蔽步骤形成掩模。 该掩模用于将图案形成到其上接收掩模的下面的基底材料中。 还公开了包括掩模的基板。