公开(公告)号：US07172952B2

公开(公告)日：2007-02-06

申请号：US10189770

申请日：2002-07-08

Applicant: Se Jin Chung

Inventor： Se Jin Chung

IPC: H01L21/20

CPC classification number: H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

Abstract: A method of crystallizing polysilicon, a method of fabricating a thin film transistor using the same, and a method of fabricating a liquid crystal display thereof form a polysilicon layer having uniformly oriented crystalline grains with high quality. A polysilicon crystallizing method includes forming a polysilicon layer on a substrate, making grains of the polysilicon layer amorphous except a portion of the grains having specific orientation, and crystallizing the polysilicon layer using the grains having the specific orientation.

Abstract translation: 一种使多晶硅结晶的方法，使用其制造薄膜晶体管的方法及其制造方法形成具有高质量均匀定向晶粒的多晶硅层。 多晶硅结晶方法包括在基板上形成多晶硅层，使具有特定取向的晶粒的一部分以外的多晶硅层的晶粒非晶化，并使用具有特定取向的晶粒结晶多晶硅层。