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公开(公告)号：US20120202036A1
公开(公告)日：2012-08-09
申请号：US13316264
申请日：2011-12-09
申请人： Se Ra KIM , Hyo Sook Joo , Suk Ky Chang , Jung Sup Shim
发明人： Se Ra KIM , Hyo Sook Joo , Suk Ky Chang , Jung Sup Shim
CPC分类号： H01L21/6836 , C08G18/6229 , C08G18/8116 , C08G2170/40 , C08L33/08 , C09J7/24 , C09J175/16 , C09J2201/128 , C09J2201/606 , C09J2203/326 , C09J2205/31 , C09J2433/006 , C09J2463/006 , C09J2467/006 , C09J2471/006 , C09J2475/006 , H01L2221/68327 , H01L2221/6834 , C08F2220/1858 , C08F2220/1875 , C08F220/06 , C08F220/20
摘要： Provided is a substrate for processing a wafer. The present invention can provide a substrate having excellent heat resistance and dimensional stability. The present invention can provide a substrate that has excellent stress relaxation properties, and therefore can prevent a wafer from being destroyed due to residual stress. Also, the present invention can provide a substrate that can prevent a wafer from being damaged or fried off due to a non-uniformly applied pressure during the wafer processing process, and that exhibits excellent cuttability. For these reasons, the substrate can be useful as a sheet for processing a wafer in various wafer preparation processes such as dicing, back-grinding, and picking-up.
摘要翻译： 提供了一种用于处理晶片的基板。 本发明可以提供耐热性和尺寸稳定性优异的基材。 本发明可以提供具有优异的应力松弛性能的基板，因此可以防止晶片由于残余应力而被破坏。 此外，本发明还可以提供一种能够防止晶片在晶片加工过程中由于施加不均匀的压力而被损坏或油炸掉的基板，并且显示出优良的切割性。 由于这些原因，基板可用作用于在各种晶片制备工艺（如切割，后磨和拾取）中处理晶片的片材。
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公开(公告)号：US09165815B2
公开(公告)日：2015-10-20
申请号：US13326103
申请日：2011-12-14
申请人： Se Ra Kim , Hyo Sook Joo , Suk Ky Chang , Jung Sup Shim
发明人： Se Ra Kim , Hyo Sook Joo , Suk Ky Chang , Jung Sup Shim
IPC分类号： H01L21/762 , B32B27/40 , H01L21/683
CPC分类号： H01L21/6836 , C09J7/29 , C09J2201/162 , C09J2203/326 , C09J2433/006 , H01L2221/68327 , H01L2221/6834 , Y10T428/265 , Y10T428/31511 , Y10T428/31551 , Y10T428/31935
摘要： Provided is a sheet for processing a wafer. The sheet can exhibit excellent heat resistance and dimensional stability, prevent breakage of a wafer in response to residual stress due to excellent stress relaxation properties, inhibit damage to or dispersion of the wafer due to application of a non-uniform pressure, and also exhibit excellent cuttability. The sheet can effectively prevent a blocking phenomenon from occurring during wafer processing. For these reasons, the sheet can be useful for processing a wafer in various wafer preparation processes such as dicing, back-grinding and picking-up.
摘要翻译： 提供了一种用于处理晶片的片材。 该片材可以表现出优异的耐热性和尺寸稳定性，防止由于优异的应力松弛性而响应于残余应力而导致的晶片破裂，抑制由于施加不均匀的压力而导致的晶片的损坏或分散，并且还表现出优异的 可切割性。 片材可以有效地防止在晶片加工过程中发生阻塞现象。 由于这些原因，该片材可用于在各种晶片制备工艺（例如切割，后研磨和拾取）中处理晶片。
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公开(公告)号：US09905450B2
公开(公告)日：2018-02-27
申请号：US13316264
申请日：2011-12-09
申请人： Se Ra Kim , Hyo Sook Joo , Suk Ky Chang , Jung Sup Shim
发明人： Se Ra Kim , Hyo Sook Joo , Suk Ky Chang , Jung Sup Shim
IPC分类号： C08L33/08 , B29C35/08 , H01L21/683 , C09J7/02 , C08G18/62 , C08G18/81 , C09J175/16
CPC分类号： H01L21/6836 , C08G18/6229 , C08G18/8116 , C08G2170/40 , C08L33/08 , C09J7/24 , C09J175/16 , C09J2201/128 , C09J2201/606 , C09J2203/326 , C09J2205/31 , C09J2433/006 , C09J2463/006 , C09J2467/006 , C09J2471/006 , C09J2475/006 , H01L2221/68327 , H01L2221/6834 , C08F2220/1858 , C08F2220/1875 , C08F220/06 , C08F220/20
摘要： Provided is a substrate for processing a wafer. The present invention can provide a substrate having excellent heat resistance and dimensional stability. The present invention can provide a substrate that has excellent stress relaxation properties, and therefore can prevent a wafer from being destroyed due to residual stress. Also, the present invention can provide a substrate that can prevent a wafer from being damaged or fried off due to a non-uniformly applied pressure during the wafer processing process, and that exhibits excellent cuttability. For these reasons, the substrate can be useful as a sheet for processing a wafer in various wafer preparation processes such as dicing, back-grinding, and picking-up.
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