公开(公告)号：US20060175297A1

公开(公告)日：2006-08-10

申请号：US11344049

申请日：2006-02-01

申请人： Se-rah Yun ,  Jeong-heon Park ,  Chang-ki Hong ,  Jae-dong Lee

发明人： Se-rah Yun ,  Jeong-heon Park ,  Chang-ki Hong ,  Jae-dong Lee

IPC分类号： H01L21/461 ,  B08B6/00 ,  B44C1/22 ,  C03C25/68

CPC分类号： H01L21/02074 ,  C11D1/146 ,  C11D3/2079 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/3409 ,  C11D11/0047

摘要： A metallization method for a semiconductor device, and a cleaning solution for the same, for cleaning a surface of a semiconductor substrate on which a metal wiring material is exposed. The metallization method may include cleaning a surface of a semiconductor substrate on which a metal wiring layer is exposed using a cleaning solution that includes deionized water, an organic acid, and at least one of an anionic surfactant and an amphoteric surfactant, and, after the cleaning, ashing the surface of the metal wiring layer.

摘要翻译： 一种用于半导体器件的金属化方法及其用于清洁其上露出金属布线材料的半导体衬底的表面的清洁溶液。 金属化方法可以包括使用包括去离子水，有机酸和阴离子表面活性剂和两性表面活性剂中的至少一种的清洗溶液来清洁其上暴露金属布线层的半导体基板的表面，以及在 清洁，灰化金属布线层的表面。

公开(公告)号：US07247256B2

公开(公告)日：2007-07-24

申请号：US10961411

申请日：2004-10-12

申请人： Jeong-heon Park ,  Jae-dong Lee ,  Sung-jun Kim ,  Chang-ki Hong

发明人： Jeong-heon Park ,  Jae-dong Lee ,  Sung-jun Kim ,  Chang-ki Hong

IPC分类号： C09K13/00

CPC分类号： C09G1/02 ,  H01L21/3212 ,  H01L21/7684

摘要： A first chemical mechanical polishing (CMP) slurry includes a polishing agent, an oxidant, a pH control additive, and an oxide film removal retarder which reduces a removal rate of the silicon oxide film. A second chemical mechanical polishing (CMP) slurry includes a polishing agent, an oxidant, a pH control additive, an oxide film removal retarder which reduces a removal rate of silicon oxide, and a defect prevention agent which inhibits scratch defects and/or corrosion defects at a surface of an aluminum film. In a one-step CMP process, either of the first or second slurry is used throughout CMP of an aluminum layer until an upper surface of an underlying silicon oxide layer is exposed. In a two-step CMP process, the first slurry is used in an initial CMP of the aluminum layer, and then the second slurry is used in a subsequent CMP until the upper surface of the underlying silicon layer is exposed.

摘要翻译： 第一化学机械抛光（CMP）浆料包括抛光剂，氧化剂，pH控制添加剂和降低氧化硅膜去除速率的氧化膜去除延迟剂。 第二化学机械抛光（CMP）浆料包括抛光剂，氧化剂，pH控制添加剂，降低氧化硅去除速率的氧化膜去除延迟剂，以及抑制刮擦缺陷和/或腐蚀缺陷的缺陷防止剂 在铝膜的表面。 在一步CMP工艺中，在铝层的整个CMP中使用第一或第二浆料中的任何一种，直到暴露底层氧化硅层的上表面。 在两步CMP工艺中，第一浆料用于铝层的初始CMP，然后将第二浆料用于随后的CMP，直到暴露下层硅层的上表面。

公开(公告)号：US06858452B2

公开(公告)日：2005-02-22

申请号：US10688610

申请日：2003-10-17

申请人： Jeong-heon Park ,  Chang-ki Hong ,  Jae-dong Lee ,  Young-rae Park ,  Ho-Young Kim

发明人： Jeong-heon Park ,  Chang-ki Hong ,  Jae-dong Lee ,  Young-rae Park ,  Ho-Young Kim

IPC分类号： H01L21/304 ,  H01L21/321 ,  H01L21/60 ,  H01L21/66

CPC分类号： H01L21/76897 ,  H01L21/3212 ,  H01L22/00

摘要： A method for isolating SAC pads of a semiconductor device, including determining a chemical mechanical polishing process time necessary to isolate the SAC pads a desired amount by referring to a relationship equation between the extent of isolation of the self-aligned contact pads and the chemical-mechanical polishing process time. The chemical mechanical polishing process is performed for the determined process time on the semiconductor device to isolate the self-aligned contact pads the desired amount. The relationship equation is determined using a test semiconductor device.

摘要翻译： 一种用于分离半导体器件的SAC焊盘的方法，包括通过参考自对准接触焊盘的隔离程度与化学机械抛光处理时间之间的关系式来确定将SAC焊盘隔离所需量所需的化学机械抛光处理时间， 机械抛光加工时间。 对半导体器件上确定的处理时间执行化学机械抛光工艺，以将自对准接触焊盘隔离所需量。 使用测试半导体器件确定关系式。

公开(公告)号：US20050112894A1

公开(公告)日：2005-05-26

申请号：US10961411

申请日：2004-10-12

申请人： Jeong-heon Park ,  Jae-dong Lee ,  Sung-jun Kim ,  Chang-ki Hong

发明人： Jeong-heon Park ,  Jae-dong Lee ,  Sung-jun Kim ,  Chang-ki Hong

IPC分类号： H01L21/304 ,  C09G1/02 ,  H01L21/321 ,  H01L21/768 ,  H01L21/302 ,  H01L21/461

CPC分类号： C09G1/02 ,  H01L21/3212 ,  H01L21/7684

摘要： A first chemical mechanical polishing (CMP) slurry includes a polishing agent, an oxidant, a pH control additive, and an oxide film removal retarder which reduces a removal rate of the silicon oxide film. A second chemical mechanical polishing (CMP) slurry includes a polishing agent, an oxidant, a pH control additive, an oxide film removal retarder which reduces a removal rate of silicon oxide, and a defect prevention agent which inhibits scratch defects and/or corrosion defects at a surface of an aluminum film. In a one-step CMP process, either of the first or second slurry is used throughout CMP of an aluminum layer until an upper surface of an underlying silicon oxide layer is exposed. In a two-step CMP process, the first slurry is used in an initial CMP of the aluminum layer, and then the second slurry is used in a subsequent CMP until the upper surface of the underlying silicon layer is exposed.

摘要翻译： 第一化学机械抛光（CMP）浆料包括抛光剂，氧化剂，pH控制添加剂和降低氧化硅膜去除速率的氧化膜去除延迟剂。 第二化学机械抛光（CMP）浆料包括抛光剂，氧化剂，pH控制添加剂，降低氧化硅去除速率的氧化膜去除延迟剂，以及抑制刮擦缺陷和/或腐蚀缺陷的缺陷防止剂 在铝膜的表面。 在一步CMP工艺中，在铝层的整个CMP中使用第一或第二浆料中的任何一种，直到暴露底层氧化硅层的上表面。 在两步CMP工艺中，第一浆料用于铝层的初始CMP，然后将第二浆料用于随后的CMP，直到暴露下层硅层的上表面。