-
公开(公告)号：US20130209835A1
公开(公告)日：2013-08-15
申请号：US13836521
申请日：2013-03-15
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Jiaoming Qui , Yonghua Chen , Ganping Ju , Thomas P. Nolan
CPC classification number: G11B5/85 , B32B15/01 , B32B15/017 , B32B15/018 , B32B2307/208 , B32B2307/706 , B32B2457/00 , C21D1/26 , C21D8/12 , C21D9/0068 , C21D2211/004 , C21D2281/02 , C22C5/04 , C22C30/00 , C22C38/002 , C22F1/14 , C23C14/165 , C23C14/221 , C23C14/28 , C23C14/3464 , C23C14/35 , C23C14/5806 , C23C14/5833 , C23C14/5873 , G11B5/647 , G11B5/65 , G11B5/653 , G11B5/66 , G11B5/732 , G11B5/84 , G11B5/851
Abstract: A method involves depositing a seed layer comprising at least A1 phase FePt. A main layer of A1 phase FePt is deposited over the seed layer. The main layer includes FePt of a different stoichiometry than the seed layer. The seed and main layers are annealed to convert the A1 phase FePt to L10 phase FePt. The annealing involves heating the substrate prior to depositing at least part of the A1 phase FePt of the main or seed layers.
Abstract translation: 一种方法包括沉积包含至少Al相FePt的种子层。 A1相FePt的主层沉积在种子层上。 主层包括与种子层不同的化学计量比的FePt。 将种子和主层退火以将Al相FePt转化为L10相FePt。 退火包括在沉积主层或种子层的Al相FePt的至少一部分之前加热衬底。
-
公开(公告)号：US09520151B2
公开(公告)日：2016-12-13
申请号：US13836521
申请日：2013-03-15
Applicant: Seagate Technology LLC
Inventor： Jiaoming Qui , Yonghua Chen , Ganping Ju , Thomas P. Nolan
IPC: G11B5/84 , C21D1/26 , G11B5/66 , G11B5/64 , B32B15/01 , G11B5/65 , G11B5/73 , C21D9/00 , C22C5/04 , C22C30/00 , C22C38/00 , C21D8/12
CPC classification number: G11B5/85 , B32B15/01 , B32B15/017 , B32B15/018 , B32B2307/208 , B32B2307/706 , B32B2457/00 , C21D1/26 , C21D8/12 , C21D9/0068 , C21D2211/004 , C21D2281/02 , C22C5/04 , C22C30/00 , C22C38/002 , C22F1/14 , C23C14/165 , C23C14/221 , C23C14/28 , C23C14/3464 , C23C14/35 , C23C14/5806 , C23C14/5833 , C23C14/5873 , G11B5/647 , G11B5/65 , G11B5/653 , G11B5/66 , G11B5/732 , G11B5/84 , G11B5/851
Abstract: A method involves depositing a seed layer comprising at least A1 phase FePt. A main layer of A1 phase FePt is deposited over the seed layer. The main layer includes FePt of a different stoichiometry than the seed layer. The seed and main layers are annealed to convert the A1 phase FePt to L10 phase FePt. The annealing involves heating the substrate prior to depositing at least part of the A1 phase FePt of the main or seed layers.
Abstract translation: 一种方法包括沉积包含至少Al相FePt的种子层。 A1相FePt的主层沉积在种子层上。 主层包括与种子层不同化学计量的FePt。 将种子和主层退火以将Al相FePt转化为L10相FePt。 退火包括在沉积主层或种子层的Al相FePt的至少一部分之前加热衬底。
-
公开(公告)号：US20170092317A1
公开(公告)日：2017-03-30
申请号：US15376043
申请日：2016-12-12
Applicant: Seagate Technology LLC
Inventor： Jiaoming Qui , Yonghua Chen , Ganping Ju , Thomas P. Nolan
IPC: G11B5/85 , C22C5/04 , C22F1/14 , C23C14/16 , C23C14/34 , G11B5/851 , C23C14/22 , C23C14/28 , C23C14/58 , G11B5/65 , G11B5/73 , B32B15/01 , C23C14/35
CPC classification number: G11B5/85 , B32B15/01 , B32B15/017 , B32B15/018 , B32B2307/208 , B32B2307/706 , B32B2457/00 , C21D1/26 , C21D8/12 , C21D9/0068 , C21D2211/004 , C21D2281/02 , C22C5/04 , C22C30/00 , C22C38/002 , C22F1/14 , C23C14/165 , C23C14/221 , C23C14/28 , C23C14/3464 , C23C14/35 , C23C14/5806 , C23C14/5833 , C23C14/5873 , G11B5/647 , G11B5/65 , G11B5/653 , G11B5/66 , G11B5/732 , G11B5/84 , G11B5/851
Abstract: One embodiment described herein is directed to a method involving depositing a seed layer on a substrate, the seed layer comprising A1 phase FePt with a ratio of Pt of Fe greater than 1:1. A main layer is deposited on the seed layer, the main layer comprising A1 phase FePt with a ratio of Pt to Fe of approximately 1:1. A cap layer is deposited on the main layer, the cap layer comprising A1 phase FePt with a ratio of Pt to Fe of less than 1:1. The seed, main and cap layers are annealed to convert the A1 phase FePt to L10 phase FePt having a graded FePt structure of varying stoichimetry from approximately Fe50Pt50 adjacent a lower portion of the structure proximate the substrate to Fe>50Pt
-
-
Search Results
3
records
(took 0.014 seconds)
