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公开(公告)号:US20230340684A1
公开(公告)日:2023-10-26
申请号:US18305973
申请日:2023-04-24
Applicant: Seagate Technology LLC
Inventor: Thomas Young CHANG , Kim Yang LEE , Mark T. KIEF , Riyan Alex MENDONSA , Brett R. HERDENDORF
Abstract: A method for depositing a material from a solution to a surface is provided. The method includes depositing, through a deposition channel of a material depositor, the solution in a rich state to the surface, wherein the solution in the rich state includes an initial concentration of the material, onto a surface, applying a predefined electrical output, by the material depositor, through the deposited solution to adhere the material to the surface, and to yield the solution in a depleted state wherein the solution in the depleted state contains a different concentration of the material from the rich solution, and removing, through a removal channel in the material depositor, the deposited solution in the depleted state. The material depositor includes a hydrophilic region defined by a hydrophilic surface through which the material depositor conducts the depositing and the removing and a hydrophobic barrier circumscribing the hydrophilic region.
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公开(公告)号:US20230301115A1
公开(公告)日:2023-09-21
申请号:US18183880
申请日:2023-03-14
Applicant: Seagate Technology LLC
Inventor: Riyan Alex MENDONSA , Brett R. HERDENDORF , Krishnan SUBRAMANIAN , Mark T. KIEF , Jon D. TRANTHAM
Abstract: The described technology provides implementations of a mechanical magnetoresistance device. The mechanical magnetoresistance device includes a first magnetoresistive well, the magnetoresistive well including at least one magnetic element and a suspension substrate, wherein the at least one magnetic element is suspended in the suspension substrate. The mechanical magnetoresistance device further includes a first conductive element in electronic communication with a first portion of the first magnetoresistive well, a second conductive element in electronic communication with a different second portion of the first magnetoresistive well, wherein the first conductive element is in electronic communication with the second conductive element via the first magnetoresistive well.
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