Perpendicular magnetic recording medium and fabrication method therefor
    1.
    发明授权
    Perpendicular magnetic recording medium and fabrication method therefor 失效
    垂直磁记录介质及其制造方法

    公开(公告)号:US4743491A

    公开(公告)日:1988-05-10

    申请号:US793772

    申请日:1985-11-01

    IPC分类号: G11B5/66 G11B5/73 G11B7/24

    摘要: A perpendicular magnetic recording medium according to this invention comprises an electrically conductive underlayer formed on a non-magnetic substrate, in the case where no high permeability magnetic film is deposited, and a magnetic thin film having a perpendicular magnetic anisotrophy is formed thereon. In the case of a so-called double-layer structure including a high permeablilty magnetic film, on the non-magnetic substrate are formed the high permeablilty magnetic film, an intermediate film, and a magnetic thin film one on another in this order. The nearest neighbor's distance of atoms of the underlayer and the intermediate film is not smaller than 0.25 nm (2.5 .ANG.) and not greater than 0.32 nm (3.2 .ANG.) and they are made of at least one selected from the group consisting of V, Ru, Zn, Os, Rh, Ir, Mo, W, Re, Pd, Pt, Nb, Ta, Sn, Al, Au, Ag, Ti, nitrides and oxides of these elements.

    摘要翻译: 根据本发明的垂直磁记录介质包括形成在非磁性基板上的导电底层,在没有沉积高磁导率磁性膜的情况下,并且在其上形成具有垂直磁性各向异性的磁性薄膜。 在包括高透度磁性膜的所谓双层结构的情况下,在非磁性基板上依次形成高磁导率磁性膜,中间膜和磁性薄膜。 最邻近的底层原子与中间膜的距离不小于0.25nm(2.5),不大于0.32nm(3.2),它们由选自V,Ru ,Zn,Os,Rh,Ir,Mo,W,Re,Pd,Pt,Nb,Ta,Sn,Al,Au,Ag,Ti,氮化物和这些元素的氧化物。