SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD

    公开(公告)号:US20190131159A1

    公开(公告)日:2019-05-02

    申请号:US16174683

    申请日:2018-10-30

    Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas, wherein the support unit includes an electrostatic chuck including an upper body having a support surface that suctions the substrate and a lower body extending from the upper body to a lower side, wherein the lower body has an extension part extending laterally from the upper body, a focus ring disposed on the extension part of the electrostatic chuck, and a metallic ring provided between the upper body of the electrostatic chuck and the focus ring and configured to control plasma in an extreme edge of the substrate.

    SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD

    公开(公告)号:US20190088449A1

    公开(公告)日:2019-03-21

    申请号:US16120498

    申请日:2018-09-04

    Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a treatment gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas in the treatment space, wherein the plasma generating unit includes a high-frequency power source, a high-frequency antenna, to which a current is applied from the high-frequency power source, and an additional antenna provided to be spaced apart from the high-frequency antenna and to which a coupling current is applied from the high-frequency antenna.

    Substrate treating apparatus and substrate treating method

    公开(公告)号:US11244847B2

    公开(公告)日:2022-02-08

    申请号:US16174683

    申请日:2018-10-30

    Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas, wherein the support unit includes an electrostatic chuck including an upper body having a support surface that suctions the substrate and a lower body extending from the upper body to a lower side, wherein the lower body has an extension part extending laterally from the upper body, a focus ring disposed on the extension part of the electrostatic chuck, and a metallic ring provided between the upper body of the electrostatic chuck and the focus ring and configured to control plasma in an extreme edge of the substrate.

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