公开(公告)号：US11127731B2

公开(公告)日：2021-09-21

申请号：US16847013

申请日：2020-04-13

Applicant: Semiconductor Components Industries, LLC

Inventor： Balaji Padmanabhan ,  Kirk K. Huang ,  Prasad Venkatraman ,  Emily M. Linehan ,  Zia Hossain

IPC: H01L29/66 ,  H01L27/02 ,  H01L29/10 ,  H01L29/78 ,  H01L29/423 ,  H01L27/088 ,  H01L29/08 ,  H01L29/06 ,  H01L29/40

Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.

公开(公告)号：US20200243503A1

公开(公告)日：2020-07-30

申请号：US16847013

申请日：2020-04-13

Applicant: Semiconductor Components Industries, LLC

Inventor： Balaji Padmanabhan ,  Kirk K. Huang ,  Prasad Venkatraman ,  Emily M. Linehan ,  Zia Hossain

IPC: H01L27/02 ,  H01L29/40 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L27/088 ,  H01L29/10

Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.

公开(公告)号：US10658351B2

公开(公告)日：2020-05-19

申请号：US16104039

申请日：2018-08-16

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Kirk K. Huang ,  Prasad Venkatraman ,  Emily M. Linehan ,  Zia Hossain

IPC: H01L29/66 ,  H01L27/02 ,  H01L29/10 ,  H01L29/78 ,  H01L29/423 ,  H01L27/088 ,  H01L29/08 ,  H01L29/06 ,  H01L29/40

Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.