公开(公告)号：US20150054068A1

公开(公告)日：2015-02-26

申请号：US14504527

申请日：2014-10-02

Applicant: Semiconductor Components Industries, LLC

Inventor： Gordon M. Grivna ,  Zia Hossain ,  Kirk K. Huang ,  Balaji Padmanabhan ,  Francine Y. Robb ,  Prasad Venkatraman

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7845 ,  H01L29/0869 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/456 ,  H01L29/66666 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/7842 ,  H01L29/7848

Abstract: In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the control electrode to induce stress within predetermined regions of the transistor.

Abstract translation: 在一个实施例中，垂直绝缘栅场效应晶体管包括嵌入在控制电极内的特征。 该特征被放置在控制电极内以在晶体管的预定区域内引起应力。

公开(公告)号：US09450091B2

公开(公告)日：2016-09-20

申请号：US14504527

申请日：2014-10-02

Applicant: Semiconductor Components Industries, LLC

Inventor： Gordon M. Grivna ,  Zia Hossain ,  Kirk K. Huang ,  Balaji Padmanabhan ,  Francine Y. Robb ,  Prasad Venkatraman

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/08

CPC classification number: H01L29/7845 ,  H01L29/0869 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/456 ,  H01L29/66666 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/7842 ,  H01L29/7848

Abstract: In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the control electrode to induce stress within predetermined regions of the transistor.

公开(公告)号：US11127731B2

公开(公告)日：2021-09-21

申请号：US16847013

申请日：2020-04-13

Applicant: Semiconductor Components Industries, LLC

Inventor： Balaji Padmanabhan ,  Kirk K. Huang ,  Prasad Venkatraman ,  Emily M. Linehan ,  Zia Hossain

IPC: H01L29/66 ,  H01L27/02 ,  H01L29/10 ,  H01L29/78 ,  H01L29/423 ,  H01L27/088 ,  H01L29/08 ,  H01L29/06 ,  H01L29/40

Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.

公开(公告)号：US20200243503A1

公开(公告)日：2020-07-30

申请号：US16847013

申请日：2020-04-13

Applicant: Semiconductor Components Industries, LLC

Inventor： Balaji Padmanabhan ,  Kirk K. Huang ,  Prasad Venkatraman ,  Emily M. Linehan ,  Zia Hossain

IPC: H01L27/02 ,  H01L29/40 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L27/088 ,  H01L29/10

Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.

公开(公告)号：US10658351B2

公开(公告)日：2020-05-19

申请号：US16104039

申请日：2018-08-16

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Kirk K. Huang ,  Prasad Venkatraman ,  Emily M. Linehan ,  Zia Hossain

IPC: H01L29/66 ,  H01L27/02 ,  H01L29/10 ,  H01L29/78 ,  H01L29/423 ,  H01L27/088 ,  H01L29/08 ,  H01L29/06 ,  H01L29/40

Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.