公开(公告)号：US20210384355A1

公开(公告)日：2021-12-09

申请号：US17284553

申请日：2019-10-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Eri SATO ,  Tatsuya ONUKI ,  Yuto YAKUBO ,  Hitoshi KUNITAKI

IPC: H01L29/786 ,  H01L29/24

Abstract: A semiconductor device capable of measuring a minute current is provided. The semiconductor device includes an operational amplifier and a diode element. An inverting input terminal of the operational amplifier and an input terminal of the diode element are electrically connected to a first terminal to which current is input, and an output terminal of the operational amplifier and an output terminal of the diode element are electrically connected to a second terminal from which voltage is output. A diode-connected transistor that includes a metal oxide in a channel formation region is used as the diode element. Since the off-state current of the transistor is extremely low, a minute current can flow between the first terminal and the second terminal. Thus, when voltage is output from the second terminal, a minute current that flows through the first terminal can be estimated from the voltage.

公开(公告)号：US20240154040A1

公开(公告)日：2024-05-09

申请号：US18411830

申请日：2024-01-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Eri SATO ,  Tatsuya Onuki ,  Yuto Yakubo ,  Hitoshi Kunitake

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/78669 ,  H01L29/78678

Abstract: A semiconductor device capable of measuring a minute current is provided. The semiconductor device includes an operational amplifier and a diode element. An inverting input terminal of the operational amplifier and an input terminal of the diode element are electrically connected to a first terminal to which current is input, and an output terminal of the operational amplifier and an output terminal of the diode element are electrically connected to a second terminal from which voltage is output. A diode-connected transistor that includes a metal oxide in a channel formation region is used as the diode element. Since the off-state current of the transistor is extremely low, a minute current can flow between the first terminal and the second terminal. Thus, when voltage is output from the second terminal, a minute current that flows through the first terminal can be estimated from the voltage.