公开(公告)号：US20160013221A1

公开(公告)日：2016-01-14

申请号：US14801093

申请日：2015-07-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shingo EGUCHI ,  Yohei MONMA ,  Atsuhiro TANI ,  Misako HIROSUE ,  Kenichi HASHIMOTO ,  Yasuharu HOSAKA

IPC: H01L27/12 ,  H01L21/683

CPC classification number: H01L27/1266 ,  B32B43/006 ,  G02F1/1303 ,  G02F1/13306 ,  G06K19/0772 ,  H01L21/67132 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/156 ,  H01L31/1892 ,  H01L31/206 ,  H01L33/005 ,  H01L51/003 ,  H01L51/0097 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  H01L2221/68395 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/19041 ,  H01L2924/30105 ,  Y10T29/41

Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

公开(公告)号：US20150140713A1

公开(公告)日：2015-05-21

申请号：US14540348

申请日：2014-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shingo EGUCHI ,  Yohei MONMA ,  Atsuhiro TANI ,  Misako HIROSUE ,  Kenichi HASHIMOTO ,  Yasuharu HOSAKA

IPC: H01L33/00 ,  H01L27/15

CPC classification number: H01L27/1266 ,  B32B43/006 ,  G02F1/1303 ,  G02F1/13306 ,  G06K19/0772 ,  H01L21/67132 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/156 ,  H01L31/1892 ,  H01L31/206 ,  H01L33/005 ,  H01L51/003 ,  H01L51/0097 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  H01L2221/68395 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/19041 ,  H01L2924/30105 ,  Y10T29/41

Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

Abstract translation: 为了在从用于制造半导体元件的基板剥离包含半导体元件的元件形成层而被除去形成有元件形成层和剥离层的基板和薄膜之间的间隙中时，为了消除放电， 加压辊。 该膜附着在加压辊之间的元件形成层上，加压辊的一侧的加压辊的弯曲表面沿加压辊的弯曲表面弯曲并收集。 在元件形成层和剥离层之间产生剥离，并且元件形成层被转印到膜上。 通过喷嘴将液体顺序地供给到通过剥离产生的元件形成层和剥离层之间的间隙，使得在元件形成层和剥离层的表面上产生的电荷被液体扩散。

公开(公告)号：US20170154902A1

公开(公告)日：2017-06-01

申请号：US15428285

申请日：2017-02-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shingo EGUCHI ,  Yohei MONMA ,  Atsuhiro TANI ,  Misako HIROSUE ,  Kenichi HASHIMOTO ,  Yasuharu HOSAKA

IPC: H01L27/12 ,  G02F1/133 ,  G06K19/077 ,  G02F1/13 ,  H01L51/00 ,  B32B43/00

CPC classification number: H01L27/1266 ,  B32B43/006 ,  G02F1/1303 ,  G02F1/13306 ,  G06K19/0772 ,  H01L21/67132 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/156 ,  H01L31/1892 ,  H01L31/206 ,  H01L33/005 ,  H01L51/003 ,  H01L51/0097 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  H01L2221/68395 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/19041 ,  H01L2924/30105 ,  Y10T29/41

Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

公开(公告)号：US20160314999A1

公开(公告)日：2016-10-27

申请号：US15204091

申请日：2016-07-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shingo EGUCHI ,  Yohei MONMA ,  Atsuhiro TANI ,  Misako HIROSUE ,  Kenichi HASHIMOTO ,  Yasuharu HOSAKA

IPC: H01L21/67 ,  H01L21/683 ,  B32B43/00 ,  H01L27/12

CPC classification number: H01L27/1266 ,  B32B43/006 ,  G02F1/1303 ,  G02F1/13306 ,  G06K19/0772 ,  H01L21/67132 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/156 ,  H01L31/1892 ,  H01L31/206 ,  H01L33/005 ,  H01L51/003 ,  H01L51/0097 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  H01L2221/68395 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/19041 ,  H01L2924/30105 ,  Y10T29/41

Abstract: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

公开(公告)号：US20150017751A1

公开(公告)日：2015-01-15

申请号：US14339867

申请日：2014-07-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shingo EGUCHI ,  Yohei MONMA ,  Atsuhiro TANI ,  Misako HIROSUE ,  Kenichi HASHIMOTO ,  Yasuharu HOSAKA

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/70

CPC classification number: H01L21/67132 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/67092 ,  H01L21/707 ,  H01L27/1266

Abstract: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.

Abstract translation: 当从衬底剥离包括半导体元件的元件形成层时，目的是抑制由剥离产生的静电产生的放电。 在衬底上形成释放层和元件形成层。 可以将后面剥离的支撑基材固定在元件形成层的上表面。 元件形成层通过支撑基材转变，并且在元件形成层和剥离层之间的界面产生剥离。 在供给液体时进行剥离，使得通过剥离顺序出现的元素形成层和剥离层用诸如纯水的液体润湿。 在元件形成层和剥离层的表面上产生的电荷可以被液体扩散，并且可以消除通过剥离带电的放电。