公开(公告)号：US08956934B2

公开(公告)日：2015-02-17

申请号：US13706841

申请日：2012-12-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Miyako Nakajima ,  Hidekazu Miyairi ,  Toshiyuki Isa ,  Erika Kato ,  Mitsuhiro Ichijo ,  Kazutaka Kuriki ,  Tomokazu Yokoi

IPC: H01L29/66 ,  H01L29/04 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/6675 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

Abstract: An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.

Abstract translation: 目的是提供具有小截止电流，大电流和高场效应迁移率的薄膜晶体管。 层叠氮化硅层和通过氧化氮化硅层形成的氧化硅层作为栅极绝缘层，从栅极绝缘层的氧化硅层的界面生长晶体，形成微晶半导体层; 因此，制造了反交错的薄膜晶体管。 由于晶体从栅极绝缘层生长，所以薄膜晶体管可以具有高结晶度，大电流和高的场效应迁移率。 此外，提供缓冲层以减少电流。