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    OXIDE SEMICONDUCTOR
    1.
    发明申请
    OXIDE SEMICONDUCTOR 审中-公开
    氧化物半导体

    公开(公告)号：US20150214309A1

    公开(公告)日：2015-07-30

    申请号：US14677131

    申请日：2015-04-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Noboru KIMIZUKA

    IPC: H01L29/26 ,  H01L29/04

    CPC classification number: C01G15/00 ,  C01G15/006 ,  C01P2002/60 ,  C01P2002/70 ,  C01P2002/74 ,  C01P2002/77 ,  C01P2004/04 ,  C01P2004/54 ,  C01P2006/10 ,  C01P2006/40 ,  H01L29/04 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/7869

    Abstract: To provide an oxide semiconductor with a novel structure. Such an oxide semiconductor is composed of an aggregation of a plurality of InGaZnO4 crystals each of which is larger than or equal to 1 nm and smaller than or equal to 3 nm, and in the oxide semiconductor, the plurality of InGaZnO4 crystals have no orientation. Alternatively, such an oxide semiconductor is such that a diffraction pattern like a halo pattern is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 300 nm, and that a diffraction pattern having a plurality of spots arranged circularly is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 1 nm and smaller than or equal to 30 nm.

    Abstract translation: 提供具有新颖结构的氧化物半导体。 这种氧化物半导体由多个InGaZnO 4晶体的聚集构成，每个InGaZnO 4晶体大于或等于1nm且小于或等于3nm，并且在氧化物半导体中，多个InGaZnO 4晶体没有取向。 或者，这样的氧化物半导体使得通过使用探针直径大于或等于300nm的电子束进行的电子衍射测量观察到类似晕圈图案的衍射图案，并且具有多个点的衍射图案 通过使用探针直径大于或等于1nm且小于或等于30nm的电子束进行的电子衍射测量观察圆形排列。

    OXIDE SEMICONDUCTOR
    3.
    发明申请
    OXIDE SEMICONDUCTOR 有权
    氧化物半导体

    公开(公告)号：US20140284596A1

    公开(公告)日：2014-09-25

    申请号：US14208661

    申请日：2014-03-13

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Noboru KIMIZUKA

    IPC: H01L29/22 ,  H01L29/04

    CPC classification number: C01G15/00 ,  C01G15/006 ,  C01P2002/60 ,  C01P2002/70 ,  C01P2002/74 ,  C01P2002/77 ,  C01P2004/04 ,  C01P2004/54 ,  C01P2006/10 ,  C01P2006/40 ,  H01L29/04 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/7869

    Abstract: To provide an oxide semiconductor with a novel structure. Such an oxide semiconductor is composed of an aggregation of a plurality of InGaZnO4 crystals each of which is larger than or equal to 1 nm and smaller than or equal to 3 nm, and in the oxide semiconductor, the plurality of InGaZnO4 crystals have no orientation. Alternatively, such an oxide semiconductor is such that a diffraction pattern like a halo pattern is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 300 nm, and that a diffraction pattern having a plurality of spots arranged circularly is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 1 nm and smaller than or equal to 30 nm

    Abstract translation: 提供具有新颖结构的氧化物半导体。 这种氧化物半导体由多个InGaZnO 4晶体的聚集构成，每个InGaZnO 4晶体大于或等于1nm且小于或等于3nm，并且在氧化物半导体中，多个InGaZnO 4晶体没有取向。 或者，这样的氧化物半导体使得通过使用探针直径大于或等于300nm的电子束进行的电子衍射测量观察到类似晕圈图案的衍射图案，并且具有多个点的衍射图案 通过使用探针直径大于或等于1nm且小于或等于30nm的电子束进行的电子衍射测量观察圆形排列

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