公开(公告)号：US20190326444A1

公开(公告)日：2019-10-24

申请号：US16459951

申请日：2019-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Tatsuya HONDA ,  Norihito SONE

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/04 ,  H01L27/12 ,  H01L21/465 ,  H01L21/428 ,  H01L21/477 ,  H01L29/66

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

公开(公告)号：US20150340513A1

公开(公告)日：2015-11-26

申请号：US14816686

申请日：2015-08-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Tatsuya HONDA ,  Norihito SONE

IPC: H01L29/786 ,  H01L21/428 ,  H01L21/465 ,  H01L21/477 ,  H01L27/12 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/428 ,  H01L21/465 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

公开(公告)号：US20220069137A1

公开(公告)日：2022-03-03

申请号：US17521021

申请日：2021-11-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Tatsuya HONDA ,  Norihito SONE

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L21/465 ,  H01L21/477 ,  H01L21/428 ,  H01L29/04 ,  H01L29/66

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

公开(公告)号：US20190051759A1

公开(公告)日：2019-02-14

申请号：US16162505

申请日：2018-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Tatsuya HONDA ,  Norihito SONE

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L29/04 ,  H01L27/12 ,  H01L21/477 ,  H01L21/465 ,  H01L21/428

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.