公开(公告)号：US10910499B2

公开(公告)日：2021-02-02

申请号：US16783677

申请日：2020-02-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiromichi Godo ,  Satoshi Kobayashi

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/423

Abstract: An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.

公开(公告)号：US09685562B2

公开(公告)日：2017-06-20

申请号：US15132297

申请日：2016-04-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiromichi Godo ,  Satoshi Kobayashi

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/78648

Abstract: An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.

公开(公告)号：US09324877B2

公开(公告)日：2016-04-26

申请号：US14483685

申请日：2014-09-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiromichi Godo ,  Satoshi Kobayashi

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/78648

Abstract: An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.

Abstract translation: 本发明的目的是提供具有诸如高耐受电压，低反向饱和电流和高导通电流等电特性的半导体器件。 特别地，目的是提供一种包括非线性元件的功率二极管和整流器。 本发明的一个实施例是一种半导体器件，包括第一电极，覆盖第一电极的栅极绝缘层，与栅极绝缘层接触并与第一电极重叠的氧化物半导体层，覆盖端部的一对第二电极 所述氧化物半导体层的绝缘层，覆盖所述一对第二电极和所述氧化物半导体层的绝缘层，以及与所述绝缘层和所述一对第二电极接触的第三电极。 一对第二电极与氧化物半导体层的端面接触。

公开(公告)号：US12094982B2

公开(公告)日：2024-09-17

申请号：US18100200

申请日：2023-01-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiromichi Godo ,  Satoshi Kobayashi

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/78648

Abstract: An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.

公开(公告)号：US11715800B2

公开(公告)日：2023-08-01

申请号：US17128721

申请日：2020-12-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiromichi Godo ,  Satoshi Kobayashi

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/78648

Abstract: An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.

公开(公告)号：US08945962B2

公开(公告)日：2015-02-03

申请号：US13845443

申请日：2013-03-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshiyuki Kurokawa ,  Yasuhiro Jinbo ,  Satoshi Kobayashi ,  Daisuke Kawae

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/04 ,  H01L29/786 ,  H01L49/02 ,  H01L29/417 ,  H01L29/49

CPC classification number: H01L29/66765 ,  H01L28/40 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/78696

Abstract: In a method for manufacturing a semiconductor device including a transistor and a conductive film over a substrate, a first insulating film and a second insulating film are formed over the transistor and the conductive film sequentially. Then, an opening and a recessed portion are formed in the second insulating film using one multi-tone photomask, wherein the opening is deeper than the recessed portion in the second insulating film. By using the opening, a first contact hole exposing one of the electrodes of the transistor is formed through the first and second insulating films and, by using the recessed portion, a second contact hole exposing the first insulating film is formed through the second insulating film. Moreover, an electrode is formed on and in contact with the one of the electrodes in the first contact hole and the first insulating film in the second contact hole.

Abstract translation: 在衬底上制造包括晶体管和导电膜的半导体器件的方法中，依次在晶体管和导电膜上形成第一绝缘膜和第二绝缘膜。 然后，使用一个多色光掩模在第二绝缘膜中形成开口和凹部，其中开口比第二绝缘膜中的凹部更深。 通过使用开口，通过第一和第二绝缘膜形成暴露晶体管的一个电极的第一接触孔，并且通过使用凹部，暴露第一绝缘膜的第二接触孔通过第二绝缘膜形成 。 此外，在第一接触孔中的一个电极和第二接触孔中的第一绝缘膜上形成电极并与其接触。