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公开(公告)号：US10141337B2
公开(公告)日：2018-11-27
申请号：US15723227
申请日：2017-10-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Tetsuhiro Tanaka , Yoshinori Ieda , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Kenichi Okazaki , Mitsuhiro Ichijo , Toshiya Endo
IPC: H01L27/12 , H01L27/06 , H01L27/088
Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.
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公开(公告)号：US09793295B2
公开(公告)日：2017-10-17
申请号：US15251375
申请日：2016-08-30
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Tetsuhiro Tanaka , Yoshinori Ieda , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Kenichi Okazaki , Mitsuhiro Ichijo , Toshiya Endo
IPC: H01L27/12 , H01L27/06 , H01L27/088
CPC classification number: H01L27/1207 , H01L27/0688 , H01L27/088 , H01L27/1225
Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.
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公开(公告)号：US09437594B2
公开(公告)日：2016-09-06
申请号：US13947724
申请日：2013-07-22
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Tetsuhiro Tanaka , Yoshinori Ieda , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Kenichi Okazaki , Mitsuhiro Ichijo , Toshiya Endo
IPC: H01L27/088 , H01L27/06 , H01L27/12
CPC classification number: H01L27/1207 , H01L27/0688 , H01L27/088 , H01L27/1225
Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.
Abstract translation: 提供一种防止在包括氧化物半导体的晶体管中氢扩散到氧化物半导体膜中的氮化物绝缘膜。 此外，提供了通过使用包括硅半导体的晶体管和包括氧化物半导体的晶体管具有良好的电特性的半导体器件。 在包括硅半导体的晶体管和包括氧化物半导体的晶体管之间提供具有不同功能的两个氮化物绝缘膜。 具体地说，在包括硅半导体的晶体管上设置含有氢的第一氮化物绝缘膜，并且在第一氮化物绝缘膜之间具有比第一氮化物绝缘膜低的氢含量并用作阻止氢的阻挡膜的第二氮化物绝缘膜 第一氮化物绝缘膜和包括氧化物半导体的晶体管。
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公开(公告)号：US09048324B2
公开(公告)日：2015-06-02
申请号：US13875507
申请日：2013-05-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Kenichi Okazaki
IPC: H01L29/12 , H01L29/786 , H01L29/423 , H01L29/49
CPC classification number: H01L29/66969 , H01L29/401 , H01L29/42384 , H01L29/4908 , H01L29/495 , H01L29/513 , H01L29/518 , H01L29/66742 , H01L29/78606 , H01L29/7869 , H01L29/78696
Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×1017 spins/cm3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.
Abstract translation: 提供了一种高度可靠的半导体器件，其产量可以防止由于静电放电损坏而降低。 提供了一种半导体器件，其包括栅极电极层，栅极电极层上的第一栅极绝缘层，在第一栅极绝缘层之上并且具有比第一栅极绝缘层更小的厚度的第二栅极绝缘层，氧化物半导体 层，以及与氧化物半导体层电连接的源电极层和漏电极层。 第一栅极绝缘层含有氮，并且对应于在电子自旋共振光谱法中出现在g-因子2.003处的信号，其自旋密度为1×1017自旋/ cm3或更小。 第二栅极绝缘层含有氮并且具有比第一栅极绝缘层低的氢浓度。
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公开(公告)号：US08995607B2
公开(公告)日：2015-03-31
申请号：US13903193
申请日：2013-05-28
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hiroyuki Miyake , Kenichi Okazaki , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Shunpei Yamazaki
CPC classification number: H03K3/353 , G11C19/184 , G11C19/28
Abstract: To provide a pulse signal output circuit and a shift register which have lower power consumption, are not easily changed over time, and have a longer lifetime. A pulse signal output circuit includes a first input signal generation circuit; a second input signal generation circuit; an output circuit which includes a first transistor and a second transistor and outputs a pulse signal in response to a signal output from the first and second input signal generation circuits; a monitor circuit which obtains the threshold voltages of the first and second transistors; and a power supply output circuit which generates a power supply potential raised by a potential higher than or equal to a potential which is equal to or substantially equal to the threshold voltage and supplies the power supply potential to the first and second input signal generation circuits. A shift register includes the pulse signal output circuit.
Abstract translation: 为了提供具有较低功耗的脉冲信号输出电路和移位寄存器，不容易随着时间而改变，并且具有更长的寿命。 脉冲信号输出电路包括第一输入信号发生电路; 第二输入信号产生电路; 输出电路，包括第一晶体管和第二晶体管，并响应于从第一和第二输入信号产生电路输出的信号输出脉冲信号; 获取第一和第二晶体管的阈值电压的监视器电路; 以及电源输出电路，其产生电位电位升高高于或等于阈值电压的电位的电位，并将电源电位提供给第一和第二输入信号发生电路。 移位寄存器包括脉冲信号输出电路。
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Patent Agency Ranking
公开(公告)号：US20130322592A1
公开(公告)日：2013-12-05
申请号：US13903193
申请日：2013-05-28
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hiroyuki Miyake , Kenichi Okazaki , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Shunpei Yamazaki
CPC classification number: H03K3/353 , G11C19/184 , G11C19/28
Abstract: To provide a pulse signal output circuit and a shift register which have lower power consumption, are not easily changed over time, and have a longer lifetime. A pulse signal output circuit includes a first input signal generation circuit; a second input signal generation circuit; an output circuit which includes a first transistor and a second transistor and outputs a pulse signal in response to a signal output from the first and second input signal generation circuits; a monitor circuit which obtains the threshold voltages of the first and second transistors; and a power supply output circuit which generates a power supply potential raised by a potential higher than or equal to a potential which is equal to or substantially equal to the threshold voltage and supplies the power supply potential to the first and second input signal generation circuits. A shift register includes the pulse signal output circuit.
Abstract translation: 为了提供具有较低功耗的脉冲信号输出电路和移位寄存器，不容易随着时间而改变，并且具有更长的寿命。 脉冲信号输出电路包括第一输入信号发生电路; 第二输入信号产生电路; 输出电路，包括第一晶体管和第二晶体管，并响应于从第一和第二输入信号产生电路输出的信号输出脉冲信号; 获取第一和第二晶体管的阈值电压的监视器电路; 以及电源输出电路，其产生电位电位升高高于或等于阈值电压的电位的电位，并将电源电位提供给第一和第二输入信号发生电路。 移位寄存器包括脉冲信号输出电路。
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7.发明授权公开(公告)号：US10453927B2
公开(公告)日：2019-10-22
申请号：US15874227
申请日：2018-01-18
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Toshinari Sasaki , Takashi Hamochi , Toshiyuki Miyamoto , Masafumi Nomura , Junichi Koezuka , Kenichi Okazaki
IPC: H01L29/786 , H01L29/24
Abstract: In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.
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公开(公告)号：US10388875B2
公开(公告)日：2019-08-20
申请号：US15728575
申请日：2017-10-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiji Yasumoto , Masataka Sato , Masafumi Nomura , Toshiyuki Miyamoto
Abstract: A method for manufacturing a flexible semiconductor device is disclosed. The method includes: forming a separation layer of a metal over a substrate; treating the separation layer with plasma under an atmosphere containing nitrogen, oxygen, silicon, and hydrogen; forming a layer over the plasma-treated separation layer, the layer being capable of supplying hydrogen and nitrogen to the separation layer; forming a functional layer over the separation layer; performing heat treatment to promote the release of hydrogen and nitrogen from the layer; and separating the substrate at the separation layer. The method allows the formation of an extremely thin oxide layer over the separation layer, which facilitates the separation, reduces the probability that the oxide layer remains under the layer, and contributes to the increase in efficiency of a device included in the functional layer.
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公开(公告)号：US10170599B2
公开(公告)日：2019-01-01
申请号：US15147105
申请日：2016-05-05
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kenichi Okazaki , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Shunpei Yamazaki , Toshinari Sasaki
IPC: H01L29/78 , H01L21/16 , H01L21/00 , H01L29/24 , H01L21/47 , H01L29/66 , H01L27/12 , H01L21/02 , H01L29/786 , H01L21/4757
Abstract: In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor device including an oxide semiconductor are improved. The semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the oxide semiconductor film; and over the transistor, a first insulating film covering the gate insulating film, the oxide semiconductor film, and the pair of electrodes; and a second insulating film covering the first insulating film. An etching rate of the first insulating film is lower than or equal to 10 nm/min and lower than an etching rate of the second insulating film when etching is performed at 25° C. with 0.5 weight % of hydrofluoric acid.
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公开(公告)号：US09799829B2
公开(公告)日：2017-10-24
申请号：US14801331
申请日：2015-07-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiji Yasumoto , Masataka Sato , Masafumi Nomura , Toshiyuki Miyamoto
IPC: H01L51/00
CPC classification number: H01L51/003 , H01L2251/5338
Abstract: A method for manufacturing a flexible semiconductor device is disclosed. The method includes: forming a separation layer of a metal over a substrate; treating the separation layer with plasma under an atmosphere containing nitrogen, oxygen, silicon, and hydrogen; forming a layer over the plasma-treated separation layer, the layer being capable of supplying hydrogen and nitrogen to the separation layer; forming a functional layer over the separation layer; performing heat treatment to promote the release of hydrogen and nitrogen from the layer; and separating the substrate at the separation layer. The method allows the formation of an extremely thin oxide layer over the separation layer, which facilitates the separation, reduces the probability that the oxide layer remains under the layer, and contributes to the increase in efficiency of a device included in the functional layer.
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