公开(公告)号：US09773810B2

公开(公告)日：2017-09-26

申请号：US14816440

申请日：2015-08-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinori Ieda ,  Atsuo Isobe ,  Yutaka Shionoiri ,  Tomoaki Atsumi

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L29/16 ,  H01L29/04 ,  H01L29/78 ,  H01L27/092 ,  H01L27/105 ,  H01L27/115 ,  H01L49/02 ,  H01L27/11551 ,  H01L27/1156

CPC classification number: H01L27/1207 ,  H01L27/092 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10805 ,  H01L27/115 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L28/40 ,  H01L29/04 ,  H01L29/16 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78 ,  H01L29/78648 ,  H01L29/7869

Abstract: Provided is a semiconductor device which has low power consumption and can operate at high speed. The semiconductor device includes a memory element including a first transistor including crystalline silicon in a channel formation region, a capacitor for storing data of the memory element, and a second transistor which is a switching element for controlling supply, storage, and release of charge in the capacitor. The second transistor is provided over an insulating film covering the first transistor. The first and second transistors have a source electrode or a drain electrode in common.

公开(公告)号：US09142679B2

公开(公告)日：2015-09-22

申请号：US13686281

申请日：2012-11-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Atsuo Isobe ,  Yoshinori Ieda ,  Masaharu Nagai

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/7869

Abstract: A semiconductor device including a minute transistor with a short channel length is provided. A gate insulating layer is formed over a gate electrode layer; an oxide semiconductor layer is formed over the gate insulating layer; a first conductive layer and a second conductive layer are formed over the oxide semiconductor layer; a conductive film is formed over the first conductive layer and the second conductive layer; a resist mask is formed over the conductive film by performing electron beam exposure; and then a third conductive layer and a fourth conductive layer are formed over and in contact with the first conductive layer and the second conductive layer, respectively, by selectively etching the conductive film.

Abstract translation: 提供了包括具有短沟道长度的微小晶体管的半导体器件。 在栅电极层上形成栅极绝缘层; 在栅绝缘层上形成氧化物半导体层; 在所述氧化物半导体层上形成第一导电层和第二导电层; 在第一导电层和第二导电层上形成导电膜; 通过进行电子束曝光在导电膜上形成抗蚀剂掩模; 然后通过选择性地蚀刻导电膜，分别在第一导电层和第二导电层上形成第三导电层和第四导电层，并与第二导电层接触。

公开(公告)号：US20150069383A1

公开(公告)日：2015-03-12

申请号：US14474450

申请日：2014-09-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka Suzuki ,  Yuki Hata ,  Yoshinori Ieda

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L29/51 ,  H01L27/1225 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device including an oxide semiconductor that is miniaturized and has favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film and a blocking film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate insulating film in contact with the oxide semiconductor film, the source electrode, and the drain electrode; and a gate electrode in contact with the gate insulating film. The blocking film contains the same material as the oxide semiconductor film, is on the same surface as the oxide semiconductor film, and has a higher conductivity than the oxide semiconductor film.

Abstract translation: 提供了包括小型化并具有良好电特性的氧化物半导体的半导体器件。 半导体器件包括氧化物半导体膜和阻挡膜; 与氧化物半导体膜电连接的源电极和漏电极; 与氧化物半导体膜，源电极和漏电极接触的栅极绝缘膜; 以及与栅极绝缘膜接触的栅电极。 阻挡膜含有与氧化物半导体膜相同的材料，与氧化物半导体膜在相同的表面上，并且具有比氧化物半导体膜更高的导电性。

公开(公告)号：US10658520B2

公开(公告)日：2020-05-19

申请号：US15681939

申请日：2017-08-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Yoshinori Ieda

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/24 ,  H01L29/66

Abstract: A semiconductor device including a transistor having low leakage current between the drain and the gate is provided. The semiconductor device includes an insulating film provided so as to cover a corner of the first conductor and a second conductor provided so as to overlap with a corner of the first conductor with the insulating film provided therebetween. Variation in the thickness of the insulating film can be prevented by making the first conductor have a rounded corner. Furthermore, concentration of electric field due to the corner of the first conductor can be relaxed. Thus, the current leakage between the first conductor and the second conductor can be reduced.

公开(公告)号：US09136280B2

公开(公告)日：2015-09-15

申请号：US14328818

申请日：2014-07-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazuma Furutani ,  Yoshinori Ieda ,  Yuto Yakubo ,  Kiyoshi Kato ,  Shunpei Yamazaki

IPC: H01L27/12 ,  G11C16/04 ,  G11C11/403 ,  H01L27/115

CPC classification number: H01L27/1214 ,  G11C11/403 ,  G11C16/0425 ,  G11C16/0433 ,  H01L27/1156 ,  H01L27/1225

Abstract: A semiconductor device has a non-volatile memory cell including a write transistor which includes an oxide semiconductor and has small leakage current in an off state between a source and a drain, a read transistor including a semiconductor material different from that of the write transistor, and a capacitor. Data is written or rewritten to the memory cell by turning on the write transistor and applying a potential to a node where one of a source electrode and drain electrode of the write transistor, one electrode of the capacitor, and a gate electrode of the read transistor are electrically connected to one another, and then turning off the write transistor so that the predetermined amount of charge is held in the node.

Abstract translation: 半导体器件具有包括写入晶体管的非易失性存储单元，该晶体管包括氧化物半导体，并且在源极和漏极之间的截止状态下具有小的漏电流，读取晶体管包括与写入晶体管不同的半导体材料， 和电容器。 通过接通写入晶体管并将数据写入或重写到存储器单元中，并将电位施加到写入晶体管的源极和漏极，电容器的一个电极和读取的晶体管的栅电极之一的节点 彼此电连接，然后关闭写入晶体管，使得预定量的电荷被保持在节点中。

公开(公告)号：US09437594B2

公开(公告)日：2016-09-06

申请号：US13947724

申请日：2013-07-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Yoshinori Ieda ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Kenichi Okazaki ,  Mitsuhiro Ichijo ,  Toshiya Endo

IPC: H01L27/088 ,  H01L27/06 ,  H01L27/12

CPC classification number: H01L27/1207 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225

Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

Abstract translation: 提供一种防止在包括氧化物半导体的晶体管中氢扩散到氧化物半导体膜中的氮化物绝缘膜。 此外，提供了通过使用包括硅半导体的晶体管和包括氧化物半导体的晶体管具有良好的电特性的半导体器件。 在包括硅半导体的晶体管和包括氧化物半导体的晶体管之间提供具有不同功能的两个氮化物绝缘膜。 具体地说，在包括硅半导体的晶体管上设置含有氢的第一氮化物绝缘膜，并且在第一氮化物绝缘膜之间具有比第一氮化物绝缘膜低的氢含量并用作阻止氢的阻挡膜的第二氮化物绝缘膜 第一氮化物绝缘膜和包括氧化物半导体的晶体管。

公开(公告)号：US20140319518A1

公开(公告)日：2014-10-30

申请号：US14328818

申请日：2014-07-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazuma Furutani ,  Yoshinori Ieda ,  Yuto Yakubo ,  Kiyoshi Kato ,  Shunpei Yamazaki

IPC: H01L27/12

CPC classification number: H01L27/1214 ,  G11C11/403 ,  G11C16/0425 ,  G11C16/0433 ,  H01L27/1156 ,  H01L27/1225

Abstract: A semiconductor device has a non-volatile memory cell including a write transistor which includes an oxide semiconductor and has small leakage current in an off state between a source and a drain, a read transistor including a semiconductor material different from that of the write transistor, and a capacitor. Data is written or rewritten to the memory cell by turning on the write transistor and applying a potential to a node where one of a source electrode and drain electrode of the write transistor, one electrode of the capacitor, and a gate electrode of the read transistor are electrically connected to one another, and then turning off the write transistor so that the predetermined amount of charge is held in the node.

Abstract translation: 半导体器件具有包括写入晶体管的非易失性存储单元，该晶体管包括氧化物半导体，并且在源极和漏极之间的截止状态下具有小的漏电流，读取晶体管包括与写入晶体管不同的半导体材料， 和电容器。 通过接通写入晶体管并将数据写入或重写到存储器单元中，并将电位施加到写入晶体管的源极和漏极，电容器的一个电极和读取的晶体管的栅电极之一的节点 彼此电连接，然后关闭写入晶体管，使得预定量的电荷被保持在节点中。

公开(公告)号：US09780201B2

公开(公告)日：2017-10-03

申请号：US15223002

申请日：2016-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinori Ando ,  Hidekazu Miyairi ,  Naoto Yamade ,  Asako Higa ,  Miki Suzuki ,  Yoshinori Ieda ,  Yasutaka Suzuki ,  Kosei Nei ,  Shunpei Yamazaki

IPC: H01L21/02 ,  H01L21/477 ,  H01L29/66 ,  C23C14/08 ,  C23C14/35 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/822 ,  H01L27/06 ,  H01L27/088 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66969 ,  C23C14/086 ,  C23C14/351 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02318 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/477 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

公开(公告)号：US09472656B2

公开(公告)日：2016-10-18

申请号：US14837565

申请日：2015-08-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Atsuo Isobe ,  Yoshinori Ieda ,  Masaharu Nagai

IPC: H01L21/84 ,  H01L29/66 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L29/66969 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/7869

Abstract: A semiconductor device including a minute transistor with a short channel length is provided. A gate insulating layer is formed over a gate electrode layer; an oxide semiconductor layer is formed over the gate insulating layer; a first conductive layer and a second conductive layer are formed over the oxide semiconductor layer; a conductive film is formed over the first conductive layer and the second conductive layer; a resist mask is formed over the conductive film by performing electron beam exposure; and then a third conductive layer and a fourth conductive layer are formed over and in contact with the first conductive layer and the second conductive layer, respectively, by selectively etching the conductive film.

Abstract translation: 提供了包括具有短沟道长度的微小晶体管的半导体器件。 在栅电极层上形成栅极绝缘层; 在栅绝缘层上形成氧化物半导体层; 在所述氧化物半导体层上形成第一导电层和第二导电层; 在第一导电层和第二导电层上形成导电膜; 通过进行电子束曝光在导电膜上形成抗蚀剂掩模; 然后通过选择性地蚀刻导电膜，分别在第一导电层和第二导电层上形成第三导电层和第四导电层，并与第二导电层接触。

公开(公告)号：US09431435B2

公开(公告)日：2016-08-30

申请号：US14520196

申请日：2014-10-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yoshinori Ando ,  Hidekazu Miyairi ,  Naoto Yamade ,  Asako Higa ,  Miki Suzuki ,  Yoshinori Ieda ,  Yasutaka Suzuki ,  Kosei Nei ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/469 ,  C23C14/08 ,  C23C14/35 ,  H01L29/66 ,  H01L21/822 ,  H01L27/06

CPC classification number: H01L29/66969 ,  C23C14/086 ,  C23C14/351 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02318 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/477 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract translation: 为了改善包括氧化物半导体的半导体器件的电特性，并且提供具有小的电特性变化的高度可靠的半导体器件。 半导体器件包括第一绝缘膜，第一绝缘膜上的第一阻挡膜，第一阻挡膜上的第二绝缘膜，以及包括第二绝缘膜上的第一氧化物半导体膜的第一晶体管。 在通过热解吸光谱法测量的高于或等于400℃的给定温度下，从第一绝缘膜释放的氢分子的量小于或等于在300℃下释放的氢分子的量的130％ 第二绝缘膜包括在化学计量组成中含有比氧更高比例的氧的区域。