公开(公告)号：US20230317832A1

公开(公告)日：2023-10-05

申请号：US18019924

申请日：2021-08-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Fumito ISAKA ,  Yoichi IIKUBO ,  Yuji EGI ,  Yasuhiro JINBO

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02631

Abstract: A method for modifying an insulating film is provided. The method includes a first step of preparing an insulating film containing hydrogen, and a second step of performing microwave treatment on the insulating film to release the hydrogen in the insulating film as water molecules, so that a hydrogen concentration in the insulating film is reduced. Note that the microwave treatment is preferably performed using an oxygen gas and an argon gas at a temperature range of higher than or equal to 200° C. and lower than or equal to 300° C., and the proportion of the flow rate of the oxygen gas to the total of the flow rate of the oxygen gas and the flow rate of the argon gas is preferably greater than 0 % and less than or equal to 50 %.

公开(公告)号：US20140329371A1

公开(公告)日：2014-11-06

申请号：US14336245

申请日：2014-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideto OHNUMA ,  Tetsuya KAKEHATA ,  Yoichi IIKUBO

IPC: H01L21/762

CPC classification number: H01L21/76254 ,  H01L21/84

Abstract: An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.

Abstract translation: 提供了即使使用诸如玻璃基板的具有低的上限温度的基板也可以在实际应用中使用具有SOI层的SOI衬底。 提供了使用这种SOI衬底的半导体器件。 在将单晶半导体层接合到具有绝缘表面的基板或绝缘基板上时，使用在有一个或两个表面上形成键的有机硅烷作为材料形成的氧化硅膜。 根据本发明，可以使用具有700℃以上的上限温度的基板，例如玻璃基板，并且可以获得与基板强结合的SOI层。 换句话说，单晶半导体层可以形成在每侧长于1米的大面积基板上。

公开(公告)号：US20240431191A1

公开(公告)日：2024-12-26

申请号：US18709741

申请日：2022-11-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Yoichi IIKUBO

IPC: H10K71/40 ,  H10K59/12 ,  H10K71/00

Abstract: A high-resolution display device is provided. A pixel electrode is formed over a first insulating layer, surface treatment is performed to hydrophobize a region of the first insulating layer that is exposed from the pixel electrode, a first film including a light-emitting material is formed over the pixel electrode, a first sacrificial film is formed over the first film, a first layer and a first sacrificial layer are formed to cover the pixel electrode by processing the first film and the first sacrificial film, and the first layer is in contact with the first insulating layer in a region not overlapping with the pixel electrode.