公开(公告)号：US20240002998A1

公开(公告)日：2024-01-04

申请号：US18213683

申请日：2023-06-23

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Yuichi SATO ,  Fumito ISAKA ,  Toshikazu OHNO

IPC分类号： C23C14/34

CPC分类号： C23C14/3414

摘要： A novel sputtering target is provided. The sputtering target includes a first region and a second region. The first region contains a first metal oxide containing an element M1 (the element M1 is one or more elements selected from Al, Ga, Si, Mg, Zr, and B). The second region contains a second metal oxide containing indium and zinc. The first region and the second region are separated from each other. Each of the first region and the second region is a crystal grain. A crystal grain boundary is observed between the first region and the second region. The diameter of each of the first region and the second region is greater than or equal to 5 nm and less than or equal to 10 μm.

公开(公告)号：US20230155032A1

公开(公告)日：2023-05-18

申请号：US17910372

申请日：2021-03-11

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yasuhiro JINBO ,  Yuji EGI ,  Fumito ISAKA ,  Shuntaro KOCHI ,  Masahiro TAKAHASHI

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/66969

摘要： A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third insulator over the first insulator and the second insulator, a fourth insulator over the third insulator, a fifth insulator that is over the oxide and is located between the first conductor and the second conductor; a sixth insulator over the fifth insulator; a seventh insulator over the sixth insulator, and a third conductor over the seventh insulator. The third conductor includes a region overlapping with the oxide, the fifth insulator has a region that is in contact with each of the oxide, the first conductor, the second conductor, and the first to fourth insulators, and the sixth insulator contains hydrogen, nitrogen, oxygen, and silicon.

公开(公告)号：US20180017818A1

公开(公告)日：2018-01-18

申请号：US15647787

申请日：2017-07-12

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Hisao IKEDA ,  Fumito ISAKA

IPC分类号： G02F1/136 ,  H01L27/32 ,  G02F1/1335 ,  H01L27/28

CPC分类号： G02F1/133504 ,  G02F1/13338 ,  G02F1/133502 ,  G02F1/133512 ,  G02F1/136 ,  G02F1/136286 ,  G02F2201/44 ,  G09G2300/0456 ,  H01L27/286 ,  H01L27/326

摘要： A display device includes a display panel and a control portion. The control portion has a function of receiving image data, and a function of generating and supplying first data and second data on the basis of the image data. The display panel includes a pixel and an optical element. The pixel includes a first display element and a second display element. The second display element includes a region adjacent to the first display element. The optical element includes a first region overlapping with the second display element. The first region has a function of directing light which enters a region overlapping with the second display element to the first display element. The first display element is a reflective display element. The second display element is a light-emitting element.

公开(公告)号：US20230397427A1

公开(公告)日：2023-12-07

申请号：US18024285

申请日：2021-09-09

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Hitoshi KUNITAKE ,  Yuji EGI ,  Fumito ISAKA

IPC分类号： H10B51/30 ,  H10B51/40 ,  H10B53/30 ,  H10B53/40 ,  H01L29/78 ,  H10B63/10 ,  H10N50/10

CPC分类号： H10B51/30 ,  H10B51/40 ,  H10B53/30 ,  H10B53/40 ,  H01L29/78391 ,  H10B63/10 ,  H10N50/10

摘要： A semiconductor device that has lower power consumption and is capable of non-destructive reading is provided. The semiconductor device includes a first transistor, a first FTJ element, and a second FTJ element. A first terminal of the first transistor is electrically connected to an output terminal of the first FTJ element and an input terminal of the second FTJ element. In data writing, polarization is caused in each of the first FTJ element and the second FTJ element in accordance with the data. In data reading, voltage with which the polarization does not change is applied between the output terminal of the first FTJ element and the input terminal of the second FTJ element. At this time, the first transistor is turned on, whereby a differential current between current flowing through the first FTJ element and current flowing through the second FTJ element flows through the first transistor. Obtaining the differential current using a read circuit or the like enables the data written to the first FTJ element and the second FTJ element to be read.

公开(公告)号：US20230317832A1

公开(公告)日：2023-10-05

申请号：US18019924

申请日：2021-08-06

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Fumito ISAKA ,  Yoichi IIKUBO ,  Yuji EGI ,  Yasuhiro JINBO

IPC分类号： H01L29/66 ,  H01L21/02

CPC分类号： H01L29/66969 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02631

摘要： A method for modifying an insulating film is provided. The method includes a first step of preparing an insulating film containing hydrogen, and a second step of performing microwave treatment on the insulating film to release the hydrogen in the insulating film as water molecules, so that a hydrogen concentration in the insulating film is reduced. Note that the microwave treatment is preferably performed using an oxygen gas and an argon gas at a temperature range of higher than or equal to 200° C. and lower than or equal to 300° C., and the proportion of the flow rate of the oxygen gas to the total of the flow rate of the oxygen gas and the flow rate of the argon gas is preferably greater than 0 % and less than or equal to 50 %.

公开(公告)号：US20180039117A1

公开(公告)日：2018-02-08

申请号：US15666701

申请日：2017-08-02

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hisao IKEDA ,  Fumito ISAKA ,  Shunpei YAMAZAKI

IPC分类号： G02F1/1368 ,  H01L51/52 ,  H01L27/32 ,  G02F1/1333 ,  H01L29/786

CPC分类号： G02F1/1368 ,  G02F1/1333 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/133526 ,  G02F1/133528 ,  G02F2001/133541 ,  G02F2001/133567 ,  G02F2001/133616 ,  G02F2001/133618 ,  G02F2201/44 ,  G02F2202/28 ,  G02F2203/02 ,  H01L27/1225 ,  H01L27/322 ,  H01L27/3232 ,  H01L27/3248 ,  H01L27/3251 ,  H01L27/3262 ,  H01L27/3267 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/5271 ,  H01L51/5275 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/301 ,  H01L2251/303

摘要： To display a high-quality video regardless of a usage environment. To provide a display device which is lightweight and less likely to be broken. To reduce power consumption of the display device. The display device includes a first display element, a first transistor connected to the first display element, a second display element, and a second transistor connected to the second display element. The first display element is a reflective display element. The first display element and the first transistor are bonded to the second display element and the second transistor with an adhesive layer. Light from the second display element is extracted to the display surface on the first display element side. The light is condensed or guided by a light-condensing means or a light-guiding means provided in a path of the light from the second display element to the display surface.

公开(公告)号：US20240026537A1

公开(公告)日：2024-01-25

申请号：US18218148

申请日：2023-07-05

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Sachiko KAWAKAMI ,  Fumito ISAKA ,  Yuji EGI

IPC分类号： C23C16/455 ,  H01L21/02 ,  H01L29/786 ,  H10B12/00 ,  C23C16/40

CPC分类号： C23C16/45553 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/0262 ,  H01L29/7869 ,  H01L29/78642 ,  H10B12/33 ,  C23C16/40 ,  H01L29/045

摘要： A novel method for forming a metal oxide is provided. The metal oxide is formed using a precursor with a high decomposition temperature while a substrate is heated to higher than or equal to 300° C. and lower than or equal to 500° C. In the formation, plasma treatment, microwave treatment, or heat treatment is preferably performed as impurity removal treatment in an atmosphere containing oxygen. The impurity removal treatment may be performed while irradiation with ultraviolet light is performed. The metal oxide is formed by alternate repetition of precursor introduction and oxidizer introduction. For example, the impurity removal treatment is preferably performed every time the precursor introduction is performed more than or equal to 5 times and less than or equal to 10 times.

公开(公告)号：US20190391427A1

公开(公告)日：2019-12-26

申请号：US16460001

申请日：2019-07-02

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Hisao IKEDA ,  Fumito ISAKA ,  Shunpei YAMAZAKI

IPC分类号： G02F1/1368 ,  H01L51/52 ,  H01L29/786 ,  H01L27/32 ,  G02F1/1333 ,  G02F1/1335

摘要： To display a high-quality video regardless of a usage environment. To provide a display device which is lightweight and less likely to be broken. To reduce power consumption of the display device. The display device includes a first display element, a first transistor connected to the first display element, a second display element, and a second transistor connected to the second display element. The first display element is a reflective display element. The first display element and the first transistor are bonded to the second display element and the second transistor with an adhesive layer. Light from the second display element is extracted to the display surface on the first display element side. The light is condensed or guided by a light-condensing means or a light-guiding means provided in a path of the light from the second display element to the display surface.

公开(公告)号：US20160083834A1

公开(公告)日：2016-03-24

申请号：US14856877

申请日：2015-09-17

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Fumito ISAKA ,  Takashi ISHIZAKA

IPC分类号： C23C14/24 ,  C23C14/04

CPC分类号： C23C14/042 ,  H01L51/0011

摘要： A novel film formation apparatus is provided. A novel film formation method and cleaning method is also provided. Further, a novel shadow mask is provided. The inventors have conceived a structure including a film formation chamber and an adhesive layer that is on the inner wall of the film formation chamber and/or on the shadow mask and to which a film formation material is to be attached.

摘要翻译： 提供了一种新颖的成膜装置。 还提供了一种新颖的成膜方法和清洗方法。 此外，提供了一种新颖的荫罩。 本发明人考虑了一种结构，其包括成膜室和在膜形成室的内壁上和/或荫罩上的粘合剂层，并且成膜材料将附着在该结构室和粘合剂层上。

公开(公告)号：US20150179813A1

公开(公告)日：2015-06-25

申请号：US14636589

申请日：2015-03-03

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Akihisa SHIMOMURA ,  Hidekazu MIYAIRI ,  Fumito ISAKA ,  Yasuhiro JINBO ,  Junya MARUYAMA

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

摘要： It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.

摘要翻译： 本发明的目的是提供一种制造晶体硅器件和半导体器件的方法，其中可以抑制衬底，基底保护膜和晶体硅膜中的裂纹的形成。 首先，在基板上形成包含半导体膜的层，并加热。 基板的热膨胀系数为6×10-7 /℃至38×10-7 /℃，优选为6×10-7 /℃至31.8×10-7 /℃。接下来， 用激光束照射包含半导体膜的层，使半导体膜结晶化，形成结晶半导体膜。 包括半导体膜的层的总应力在加热步骤之后为-500N / m至+ 50N / m，优选为-150N / m至0N / m。