公开(公告)号：US20150137121A1

公开(公告)日：2015-05-21

申请号：US14578920

申请日：2014-12-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei NODA ,  Shunpei YAMAZAKI ,  Tatsuya HONDA ,  Yusuke SEKINE ,  Hiroyuki TOMATSU

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L21/0242 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02656 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78609

Abstract: A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.

Abstract translation: 提供了包括氧化物半导体并且具有高场效应迁移率并且其中阈值电压的变化小的高度可靠的晶体管。 通过使用晶体管，提供了难以实现的高性能半导体器件。 晶体管包括含有选自铟，锡，锌和铝中的两种或更多种，优选三种或更多种元素的氧化物半导体膜。 在加热基板的状态下形成氧化物半导体膜。 此外，在晶体管的制造过程中，通过相邻的绝缘膜和/或通过离子注入向氧化物半导体膜提供氧，从而尽可能地减少产生载流子的氧气缺乏。 此外，在晶体管的制造过程中，氧化物半导体膜被高度纯化，使得氢的浓度极低。

公开(公告)号：US20160163710A1

公开(公告)日：2016-06-09

申请号：US15044180

申请日：2016-02-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yusuke SEKINE

IPC: H01L27/105 ,  H01L27/02 ,  H01L27/12 ,  H01L27/092 ,  H01L29/786

CPC classification number: H01L27/1052 ,  G11C11/412 ,  G11C11/4125 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/1108 ,  H01L27/1207 ,  H01L29/7869

Abstract: A nonvolatile memory is provided. A semiconductor device (a nonvolatile memory) has a circuit configuration similar to that of a general SRAM. By providing a transistor whose off-state current is small between a stored data holding portion and a power supply line of the SRAM, leakage of electric charge from the stored data holding portion is prevented. As the transistor whose off-state current is small provided for preventing leakage of electric charge from the stored data holding portion, a transistor including an oxide semiconductor film is preferably used. Such a configuration can also be applied to a shift register, whereby a shift register with low power consumption can be obtained.

Abstract translation: 提供非易失性存储器。 半导体器件（非易失性存储器）具有与普通SRAM类似的电路结构。 通过在存储的数据保持部分和SRAM的电源线之间提供截止电流较小的晶体管，防止从存储的数据保持部分泄漏电荷。 作为提供用于防止从存储的数据保持部分泄漏电荷的截止电流较小的晶体管，优选使用包括氧化物半导体膜的晶体管。 这种配置也可以应用于移位寄存器，由此可以获得具有低功耗的移位寄存器。