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    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20150137121A1

    公开(公告)日：2015-05-21

    申请号：US14578920

    申请日：2014-12-22

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kosei NODA ,  Shunpei YAMAZAKI ,  Tatsuya HONDA ,  Yusuke SEKINE ,  Hiroyuki TOMATSU

    IPC: H01L29/786 ,  H01L27/12

    CPC classification number: H01L29/7869 ,  H01L21/0242 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02656 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78609

    Abstract: A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.

    Abstract translation: 提供了包括氧化物半导体并且具有高场效应迁移率并且其中阈值电压的变化小的高度可靠的晶体管。 通过使用晶体管，提供了难以实现的高性能半导体器件。 晶体管包括含有选自铟，锡，锌和铝中的两种或更多种，优选三种或更多种元素的氧化物半导体膜。 在加热基板的状态下形成氧化物半导体膜。 此外，在晶体管的制造过程中，通过相邻的绝缘膜和/或通过离子注入向氧化物半导体膜提供氧，从而尽可能地减少产生载流子的氧气缺乏。 此外，在晶体管的制造过程中，氧化物半导体膜被高度纯化，使得氢的浓度极低。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150129873A1

    公开(公告)日：2015-05-14

    申请号：US14598384

    申请日：2015-01-16

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Masashi FUJITA ,  Yutaka SHIONOIRI ,  Hiroyuki TOMATSU ,  Hidetomo KOBAYASHI

    IPC: H01L27/12 ,  H01L27/108 ,  H01L27/088

    CPC classification number: H01L27/1225 ,  H01L21/84 ,  H01L27/088 ,  H01L27/108 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1222 ,  H01L27/1251

    Abstract: A first field-effect transistor provided over a substrate in which an insulating region is provided over a first semiconductor region and a second semiconductor region is provided over the insulating region; an insulating layer provided over the substrate; a second field-effect transistor that is provided one flat surface of the insulating layer and includes an oxide semiconductor layer; and a control terminal are provided. The control terminal is formed in the same step as a source and a drain of the second field-effect transistor, and a voltage for controlling a threshold voltage of the first field-effect transistor is supplied to the control terminal.

    Abstract translation: 提供在绝缘区域上方设置有在第一半导体区域和第二半导体区域上设置绝缘区域的衬底上的第一场效应晶体管; 设置在所述基板上的绝缘层; 第二场效应晶体管，其设置在所述绝缘层的一个平面上，并且包括氧化物半导体层; 并提供控制终端。 控制端子以与第二场效应晶体管的源极和漏极相同的步骤形成，并且用于控制第一场效应晶体管的阈值电压的电压被提供给控制端子。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    5.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的制造方法

    公开(公告)号：US20150044818A1

    公开(公告)日：2015-02-12

    申请号：US14521710

    申请日：2014-10-23

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masashi TSUBUKU ,  Shuhei YOSHITOMI ,  Takahiro TSUJI ,  Miyuki HOSOBA ,  Junichiro SAKATA ,  Hiroyuki TOMATSU ,  Masahiko HAYAKAWA

    IPC: H01L27/12 ,  H01L29/66

    CPC classification number: H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

    Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.

    Abstract translation: 本发明的目的是提供一种包括氧化物半导体膜的薄膜晶体管的结构的制造方法，其中形成沟道的阈值电压为正且尽可能接近0V。 形成保护绝缘层以覆盖包括通过第一热处理脱水或脱氢的氧化物半导体层的薄膜晶体管，以及在比第一热处理低的温度下进行第二热处理，其中， 重复多次温度的降低，由此，在不影响通道长度的情况下，包含氧化物半导体层的薄膜晶体管，其中形成沟道的阈值电压为正且尽可能接近0V，可以 制造。

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