公开(公告)号：US20170033129A1

公开(公告)日：2017-02-02

申请号：US15292544

申请日：2016-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiko HAYAKAWA ,  Yuta MORIYA ,  Junya GOTO ,  Yasuyuki ARAI

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  G02F1/1339 ,  G02F1/13454 ,  G02F2001/13606 ,  G02F2001/136231 ,  G09G3/3648 ,  G09G2300/04 ,  H01L27/127 ,  H01L2224/05572 ,  H01L2924/00014 ,  H01L2224/05552

Abstract: The number of photolithography steps used for manufacturing a transistor is reduced to less than the conventional one and a highly reliable semiconductor device is provided. The present invention relates to a semiconductor device including a circuit including a transistor having an oxide semiconductor layer over a first substrate and a second substrate fixed to the first substrate with a sealant. A closed space surrounded by the sealant, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air. The sealant surrounds at least the transistor and has a closed pattern shape. Further, the circuit is a driver circuit including a transistor having an oxide semiconductor layer.

Abstract translation: 用于制造晶体管的光刻步骤的数量减少到比常规光刻步骤的数量少，并且提供了高度可靠的半导体器件。 本发明涉及一种包括电路的半导体器件，该电路包括在第一衬底上具有氧化物半导体层的晶体管，以及用密封剂固定到第一衬底的第二衬底。 由密封剂，第一基材和第二基材包围的封闭空间处于减压状态或填充有干燥空气。 密封剂至少围绕晶体管并且具有封闭的图案形状。 此外，电路是包括具有氧化物半导体层的晶体管的驱动器电路。