公开(公告)号：US20040169177A1

公开(公告)日：2004-09-02

申请号：US10792132

申请日：2004-03-04

申请人： Semiconductor Energy Laboratory Co., Ltd. a Japan corporation

发明人： Taketomi Asami ,  Mitsuhiro Ichijo ,  Satoshi Toriumi ,  Takashi Ohtsuki ,  Toru Mitsuki ,  Kenji Kasahara ,  Tamae Takano ,  Chiho Kokubo ,  Shunpei Yamazaki ,  Takeshi Shichi

IPC分类号： H01L029/04

CPC分类号： H01L29/045 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78666 ,  H01L29/78684 ,  H01L2029/7863

摘要： The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region is formed from the crystalline semiconductor film and a method of manufacturing the semiconductor device are provided. In a semiconductor film containing silicon and germanium as its ingredient and having a crystal structure, the null101null plane reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction. This semiconductor film is obtained by forming an amorphous semiconductor film containing silicon and germanium as its ingredient through plasma CVD in which hydride, fluoride, or chloride gas of a silicon atom is used, the repetition frequency is set to 10 kHz or less, and the duty ratio is set to 50% or less for intermittent electric discharge or pulsed electric discharge, and introducing an element for promoting crystallization of the amorphous semiconductor film to the surface thereof to crystallize the amorphous semiconductor film while utilizing the introduced element.

摘要翻译： 通过热处理使激光，紫外线或红外线等强光照射而使非晶半导体膜结晶而得到的结晶半导体膜的取向比提高，并且有源区由结晶半导体形成 膜和制造半导体器件的方法。 在含有硅和锗作为其成分且具有晶体结构的半导体膜中，{101}面达到通过电子反向散射衍射检测的所有晶格面的30％以上。 该半导体膜通过使用其中使用硅原子的氢化物，氟化物或氯化物气体，重复频率设定为10kHz以下的等离子体CVD形成含有硅和锗作为其成分的非晶半导体膜， 对于间歇放电或脉冲放电，占空比被设定为50％以下，并且在其表面引入促进非晶半导体膜的结晶化的元素，从而使非晶半导体膜在利用引入元素的同时结晶。