公开(公告)号：US07589028B1

公开(公告)日：2009-09-15

申请号：US11280076

申请日：2005-11-15

申请人： Seon-Mee Cho ,  Mike Barnes ,  Michelle Schulberg ,  George D. Papasouliotis

发明人： Seon-Mee Cho ,  Mike Barnes ,  Michelle Schulberg ,  George D. Papasouliotis

IPC分类号： H01L21/31 ,  H01L21/461

CPC分类号： H01L21/76837 ,  H01L21/02145 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/02345 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828

摘要： Methods of forming dielectric films with increased density and improved film properties are provided. The methods involve exposing dielectric films to microwave radiation. According to various embodiments, the methods may be used to remove hydroxyl bonds, increase film density, reduce or eliminate seams and voids, and optimize film properties such as dielectric constant, refractive index and stress for particular applications. In certain embodiments, the methods are used to form conformal films deposited by a technique such as PDL. The methods may be used in applications requiring low thermal budgets.

摘要翻译： 提供了形成具有增加的密度和改进的膜性质的介电膜的方法。 该方法包括将介电膜暴露于微波辐射。 根据各种实施方案，可以使用这些方法去除羟基键，增加膜密度，减少或消除接缝和空隙，并且优化膜特性，例如特定用途的介电常数，折射率和应力。 在某些实施方案中，所述方法用于形成通过诸如PDL的技术沉积的保形膜。 该方法可用于需要低热预算的应用中。

公开(公告)号：US06951765B1

公开(公告)日：2005-10-04

申请号：US10016017

申请日：2001-12-12

申请人： Sanjay Gopinath ,  Patrick A. Van Cleemput ,  Michelle Schulberg ,  Sasangan Ramanathan ,  Francisco Juarez ,  Patrick Joyce

发明人： Sanjay Gopinath ,  Patrick A. Van Cleemput ,  Michelle Schulberg ,  Sasangan Ramanathan ,  Francisco Juarez ,  Patrick Joyce

IPC分类号： B08B13/00 ,  C23C18/16 ,  C25D5/00

CPC分类号： C23C18/1685 ,  C23C18/1678 ,  C25D5/003 ,  C25D17/02 ,  C25D21/18

摘要： The present invention pertains to apparatus and methods for introduction of solid precursors and reactants into a supercritical fluid reactor. Solids are dissolved in supercritical fluid solvents in generator apparatus separate from the supercritical fluid reactor. Such apparatus preferably generate saturated solutions of solid precursors via recirculation of supercritical fluids through a vessel containing the solid precursors. Supercritical solutions of the solids are introduced into the reactor, which itself is charged with a supercritical fluid. Supercritical conditions are maintained during the delivery of the dissolved precursor to the reactor. Recirculation of supercritical precursor solutions through the reactor may or may not be implemented in methods of the invention. Methods of the invention are particularly well suited for integrated circuit fabrication, where films are deposited on wafers under supercritical conditions.

摘要翻译： 本发明涉及将固体前体和反应物引入超临界流体反应器的装置和方法。 固体溶解在与超临界流体反应器分离的发生器装置中的超临界流体溶剂中。 这种装置优选地通过超临界流体再循环通过含有固体前体的容器来产生固体前体的饱和溶液。 将固体的超临界溶液引入反应器，反应器本身装有超临界流体。 在将溶解的前体输送到反应器期间，保持超临界条件。 通过反应器的超临界前体溶液的再循环可以或可以不在本发明的方法中实施。 本发明的方法特别适用于集成电路制造，其中膜在超临界条件下沉积在晶片上。