公开(公告)号：US06951765B1

公开(公告)日：2005-10-04

申请号：US10016017

申请日：2001-12-12

申请人： Sanjay Gopinath ,  Patrick A. Van Cleemput ,  Michelle Schulberg ,  Sasangan Ramanathan ,  Francisco Juarez ,  Patrick Joyce

发明人： Sanjay Gopinath ,  Patrick A. Van Cleemput ,  Michelle Schulberg ,  Sasangan Ramanathan ,  Francisco Juarez ,  Patrick Joyce

IPC分类号： B08B13/00 ,  C23C18/16 ,  C25D5/00

CPC分类号： C23C18/1685 ,  C23C18/1678 ,  C25D5/003 ,  C25D17/02 ,  C25D21/18

摘要： The present invention pertains to apparatus and methods for introduction of solid precursors and reactants into a supercritical fluid reactor. Solids are dissolved in supercritical fluid solvents in generator apparatus separate from the supercritical fluid reactor. Such apparatus preferably generate saturated solutions of solid precursors via recirculation of supercritical fluids through a vessel containing the solid precursors. Supercritical solutions of the solids are introduced into the reactor, which itself is charged with a supercritical fluid. Supercritical conditions are maintained during the delivery of the dissolved precursor to the reactor. Recirculation of supercritical precursor solutions through the reactor may or may not be implemented in methods of the invention. Methods of the invention are particularly well suited for integrated circuit fabrication, where films are deposited on wafers under supercritical conditions.

摘要翻译： 本发明涉及将固体前体和反应物引入超临界流体反应器的装置和方法。 固体溶解在与超临界流体反应器分离的发生器装置中的超临界流体溶剂中。 这种装置优选地通过超临界流体再循环通过含有固体前体的容器来产生固体前体的饱和溶液。 将固体的超临界溶液引入反应器，反应器本身装有超临界流体。 在将溶解的前体输送到反应器期间，保持超临界条件。 通过反应器的超临界前体溶液的再循环可以或可以不在本发明的方法中实施。 本发明的方法特别适用于集成电路制造，其中膜在超临界条件下沉积在晶片上。

公开(公告)号：US06550484B1

公开(公告)日：2003-04-22

申请号：US10011499

申请日：2001-12-07

申请人： Sanjay Gopinath ,  Patrick A. Van Cleemput ,  Francisco Juarez ,  Krishnan Shrinivasan

发明人： Sanjay Gopinath ,  Patrick A. Van Cleemput ,  Francisco Juarez ,  Krishnan Shrinivasan

IPC分类号： B08B600

CPC分类号： H01L21/68735 ,  H01L21/67126

摘要： The present invention pertains to apparatus and methods for maintaining wafer back side, bevel, and front side edge exclusion during supercritical fluid processing. Apparatus of the invention include a pedestal and an exclusion ring. When the exclusion ring is engaged with the pedestal a channel is formed. A reactant-free supercritical fluid is passed through the channel and over a circumferential front edge of a wafer. The flow of reactant-free supercritical fluid protects the bevel and circumferential front edge of the wafer from exposure to reactants in a supercritical processing medium. The back side of the wafer is protected by contact with the pedestal and the flow of reactant-free supercritical fluid. Exclusion rings of the invention, when engaged with their corresponding pedestals make no or very little physical contact with the wafer front side.

摘要翻译： 本发明涉及用于在超临界流体处理期间保持晶片背面，斜面和前侧边缘排除的装置和方法。 本发明的装置包括基座和排阻环。 当排除环与基座接合时，形成通道。 无反应物的超临界流体通过通道并在晶片的周向前边缘上方。 无反应物的超临界流体的流动保护晶片的斜面和周向前边缘暴露于超临界处理介质中的反应物。 通过与基座接触和无反应物的超临界流体的流动来保护晶片的背面。 当与其对应的基座接合时，本发明的排除环与晶片正面没有任何或很少的物理接触。

公开(公告)号：US07208389B1

公开(公告)日：2007-04-24

申请号：US10672311

申请日：2003-09-26

申请人： Adrianne K. Tipton ,  Brian G. Lu ,  Patrick A. Van Cleemput ,  Michelle T. Schulberg ,  Qingguo Wu ,  Haiying Fu ,  Feng Wang

发明人： Adrianne K. Tipton ,  Brian G. Lu ,  Patrick A. Van Cleemput ,  Michelle T. Schulberg ,  Qingguo Wu ,  Haiying Fu ,  Feng Wang

IPC分类号： H01L21/76

CPC分类号： H01L21/31695 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348

摘要： Methods of preparing a porous low-k dielectric material on a substrate are provided. The methods involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film, leaving a porous low-k dielectric matrix. Methods using oxidative conditions and non-oxidative conditions are described. The methods described may be used to remove porogen from porogen-containing precursor films. The porogen may be a hydrocarbon such as a terpene (e.g., alpha-terpinene) or a norbornene (e.g., ENB). The resulting porous low-k dielectric matrix can then be annealed to remove water and remaining silanols capped to protect it from degradation by ambient conditions, which methods will also be described.

摘要翻译： 提供了在衬底上制备多孔低k电介质材料的方法。 这些方法涉及使用紫外线辐射与含致孔剂的前体膜反应并除去致孔剂，留下多孔的低k电介质基质。 描述了使用氧化条件和非氧化条件的方法。 所描述的方法可用于从含致孔剂的前体膜中除去致孔剂。 致孔剂可以是烃，例如萜烯（例如α-萜品烯）或降冰片烯（例如ENB）。 然后可以将得到的多孔低k电介质基体退火以除去水和封闭的剩余硅烷醇，以保护其免受环境条件的退化，这些方法也将被描述。

公开(公告)号：US6149779A

公开(公告)日：2000-11-21

申请号：US185164

申请日：1998-11-03

申请人： Patrick A. Van Cleemput

发明人： Patrick A. Van Cleemput

IPC分类号： C23C16/40 ,  H01L21/768 ,  C23L14/34

CPC分类号： C23C16/401 ,  H01L21/76837

摘要： A low dielectric constant gap-fill process using high density plasma (HDP) deposition is provided for depositing a boron-doped silicon oxide layer to eliminate the damaging effects of fluorine on underlying circuitry while still maintaining a low dielectric constant for an intermetal dielectric (IMD) layer.

摘要翻译： 提供了使用高密度等离子体（HDP）沉积的低介电常数间隙填充工艺，用于沉积硼掺杂的氧化硅层以消除氟在底层电路上的破坏作用，同时仍保持金属间电介质的低介电常数（IMD ）层。

公开(公告)号：US06766810B1

公开(公告)日：2004-07-27

申请号：US10078213

申请日：2002-02-15

申请人： Patrick A. Van Cleemput

发明人： Patrick A. Van Cleemput

IPC分类号： B08B1300

CPC分类号： B08B7/0021 ,  B01D11/0203 ,  B01D11/0403 ,  Y10T137/0379 ,  Y10T137/8326

摘要： The present invention pertains to methods and apparatus for controlling the pressure in a supercritical processing system. Active methods for controlling the pressure include anticipating a pressure deviation due to a solute addition to a system, and changing the pressure within the system to compensate for the deviation. In this way, a desired pressure is achieved when the solute is added, without phase separation of the solute from the solvent. Pressure is adjusted by changing the volume of the supercritical processing system. Passive methods include adjusting the pressure of a supercritical system by changing the volume in response to a pressure deviation from a desired pressure. Apparatus for controlling the pressure in a supercritical processing system are described.

摘要翻译： 本发明涉及用于控制超临界处理系统中的压力的​​方法和装置。 用于控制压力的主动方法包括预测由于系统中的溶质添加引起的压力偏差，以及改变系统内的压力以补偿偏差。 以这种方式，当添加溶质而不使溶质从溶剂中分离时，获得所需的压力。 通过改变超临界处理系统的体积来调节压力。 被动方法包括通过响应于与期望压力的压力偏差来改变体积来调节超临界系统的压力。 描述了用于控制超临界处理系统中的压力的​​装置。

公开(公告)号：US06395150B1

公开(公告)日：2002-05-28

申请号：US09053554

申请日：1998-04-01

申请人： Patrick A. Van Cleemput ,  George D. Papasouliotis ,  Mark A. Logan ,  Bart van Schravendijk ,  William J. King

发明人： Patrick A. Van Cleemput ,  George D. Papasouliotis ,  Mark A. Logan ,  Bart van Schravendijk ,  William J. King

IPC分类号： C23C1400

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/507 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76224

摘要： A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an He inefficient sputtering inert gas such as He. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios of 6.0:1 and higher can be filled without the formation of voids and without damaging circuit elements.

摘要翻译： 用于在衬底上填充高纵横比间隙的方法使用常规的高密度等离子体沉积工艺，用诸如He的He低效溅射惰性气体替代或还原有效的溅射惰性气体，例如Ar。 通过减少溅射部件，减少了来自溅射材料的侧壁沉积。 因此，可以在不形成空隙并且不损坏电路元件的情况下填充宽高比为6.0:1和更高的间隙。

公开(公告)号：US06846391B1

公开(公告)日：2005-01-25

申请号：US10035773

申请日：2001-12-21

申请人： George D. Papasouliotis ,  Robert D. Tas ,  Patrick A. Van Cleemput ,  Bart van Schravendijk

发明人： George D. Papasouliotis ,  Robert D. Tas ,  Patrick A. Van Cleemput ,  Bart van Schravendijk

IPC分类号： C23C16/04 ,  C23C16/507 ,  H01L21/316 ,  H01L21/762 ,  C23C14/00 ,  B44C1/22 ,  C03C15/00 ,  C23C14/32 ,  H05H1/02

CPC分类号： C23C16/045 ,  C23C16/401 ,  C23C16/509 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76224

摘要： A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes to deposit fluorine-doped films, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an inefficient sputtering inert gas such as He and/or hydrogen. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios greater than 3.0:1 and spacings between lines less than 0.13 microns can be filled with low dielectric constant films without the formation of voids and without damaging circuit elements.

摘要翻译： 用于在衬底上填充高纵横比间隙的方法使用常规的高密度等离子体沉积工艺沉积氟掺杂的膜，利用诸如Ar的有效溅射惰性气体（例如Ar）被替换或还原，其中诸如He和/或 氢。 通过减少溅射部件，减少了来自溅射材料的侧壁沉积。 因此，宽高比大于3.0:1的间隙和小于0.13微米的线之间的间距可以用低介电常数膜填充而不形成空隙并且不损坏电路元件。

公开(公告)号：US06867152B1

公开(公告)日：2005-03-15

申请号：US10672309

申请日：2003-09-26

申请人： Dennis M. Hausmann ,  Adrianne K. Tipton ,  Patrick A. Van Cleemput ,  Bunsen Nie ,  Francisco J. Juarez ,  Teresa Pong

发明人： Dennis M. Hausmann ,  Adrianne K. Tipton ,  Patrick A. Van Cleemput ,  Bunsen Nie ,  Francisco J. Juarez ,  Teresa Pong

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45553 ,  C23C16/401 ,  C23C16/45534 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/76828 ,  H01L21/76837 ,  Y10S438/909 ,  Y10S438/935

摘要： A rapid vapor deposition (RVD) method conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant, low wet etch rate, low film shrinkage and low stress hysteresis, appropriate for various integrated circuit dielectric gap fill applications such as shallow trench isolation. The method includes the following two principal operations: depositing a thin conformal and saturated layer of aluminum-containing precursor over some or all of the substrate surface; and exposing the saturated layer of aluminum-containing precursor to a silicon-containing precursor gas to form a dielectric layer. In some cases, the substrate temperatures during contact with silicon-containing precursor are greater than about 250 degree Celsius to produce an improved film. In other cases, post-deposition anneal process may be used to improve properties of the film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired dielectric thickness is achieved.

摘要翻译： 快速蒸镀（RVD）方法在介质材料的小特征上共形沉积介电材料。 所得到的介电膜具有低介电常数，低湿蚀刻速率，低膜收缩率和低应力滞后，适用于各种集成电路电介质间隙填充应用，如浅沟槽隔离。 该方法包括以下两个主要操作：在部分或全部基材表面上沉积薄的共形和饱和的含铝前体层; 并将含铝前体的饱和层暴露于含硅前体气体中以形成电介质层。 在某些情况下，与含硅前体接触时的基板温度大于约250摄氏度以产生改进的膜。 在其他情况下，可以使用后沉积退火工艺来改善膜的性能。 通常，在引入反应气体以除去副产物和未使用的反应物之间采用惰性气体吹扫。 可以重复这些操作以沉积多层介电材料，直到达到所需的介电厚度。

公开(公告)号：US06340628B1

公开(公告)日：2002-01-22

申请号：US09735318

申请日：2000-12-12

申请人： Patrick A. Van Cleemput ,  Ravi Kumar Laxman ,  Jen Shu ,  Michelle T. Schulberg ,  Bunsen Nie

发明人： Patrick A. Van Cleemput ,  Ravi Kumar Laxman ,  Jen Shu ,  Michelle T. Schulberg ,  Bunsen Nie

IPC分类号： H01L213205

CPC分类号： H01L21/02126 ,  C23C16/30 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633

摘要： A chemical vapor deposition (CVD) process uses a precursor gas, such as with a siloxane or alkylsilane, and a carbon-dioxide-containing gas, such as CO2 with O2 or CO2 with CxH(2x+1)OH where 1≦x≦5, to deposit a dielectric layer with no photoresist “footing”, a low dielectric constant, and high degrees of adhesion and hardness. Because nitrogen is not used in the deposition process (the carbon-dioxide-containing gas replaces nitrogen-containing gases in conventional processes), amines do not build into the deposited layer, thereby preventing photoresist “footing”.

摘要翻译： 化学气相沉积（CVD）方法使用前体气体，例如与硅氧烷或烷基硅烷，以及含二氧化碳的气体，例如具有C x H（2x + 1）OH的O 2或CO 2的二氧化碳气体，其中1 <= x 为了沉积没有光致抗蚀剂“基脚”的介电层，低介电常数和高度的附着力和硬度。 由于在沉积工艺中不使用氮（在常规工艺中，含二氧化碳的气体替代含氮气体），胺不会沉积到沉积层中，从而防止光致抗蚀剂“基础”。

公开(公告)号：US07176144B1

公开(公告)日：2007-02-13

申请号：US10785235

申请日：2004-02-23

申请人： Feng Wang ,  Michelle T. Schulberg ,  Jianing Sun ,  Raashina Humayun ,  Patrick A. Van Cleemput

发明人： Feng Wang ,  Michelle T. Schulberg ,  Jianing Sun ,  Raashina Humayun ,  Patrick A. Van Cleemput

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31695 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/0234 ,  H01L21/3105

摘要： Methods of preparing a low-k dielectric material on a substrate are provided. The methods involve using plasma techniques to remove porogen from a precursor layer comprising porogen and a dielectric matrix and to protect the dielectric matrix with a silanol capping agent, resulting in a low-k dielectric matrix. Porogen removal and silanol capping can occur concurrently or sequentially. If performed sequentially, silanol capping is performed without first exposing the dielectric matrix to moisture or ambient conditions.

摘要翻译： 提供了在衬底上制备低k电介质材料的方法。 这些方法涉及使用等离子体技术从包含致孔剂和电介质基质的前体层中除去致孔剂，并且用硅烷醇封端剂保护介电基质，导致低k电介质基质。 除磷和硅烷醇封端可以同时或顺序进行。 如果顺序执行，则不首先将电介质基质暴露于水分或环境条件下进行硅烷醇封端。