摘要:
An image sensor based on a depth pixel structure is provided. The image sensor may include a pixel including a photodiode, and the photodiode may include a transfer gate to transfer, to a floating diffusion node, an electron generated by a light reflected from an object.
摘要:
An image sensor based on a depth pixel structure is provided. The image sensor may include a pixel including a photodiode, and the photodiode may include a transfer gate to transfer, to a floating diffusion node, an electron generated by a light reflected from an object.
摘要:
Disclosed is a filter for selective transmission of visible rays and infrared rays using an electrical signal. The filter comprises: a first filter for controlling the degree of absorption of visible rays by changing the molecular arrangement in accordance with the control of the electrical signal; and a second filter for controlling the degree of reflection of infrared rays by changing reflectivity in accordance with the control of the electrical signal.
摘要:
A digital camera (400) comprises a sensor array (410) having image pixels (I) for capturing image data during an exposure period (EP), and focus-detection pixels (F) for determining focus information in a first mode of operation. The digital camera (400) is adapted for obtaining brightness related data (v) from the focus-detection pixels (F) in a second mode of operation, during capturing of an image by means of the image pixels (I), the digital camera further comprising a controller (428) adapted for determining the exposure period (EP) based on the brightness related data (v) obtained from the focus-detection pixels (F). A corresponding method is also provided.
摘要:
An image sensor (1) comprising: an array (2) of pixels logically organized in rows and columns, the outputs of the pixels being connected to column lines (COLx) connectable to an array of buffers (3) via a routing block (10), the buffers being connected to an array of A/D convertors (4), the routing block (10) having a group of switches (6, 7) for reading sub-picture data, whereby the values of at least two rows of the sub-picture are distributed over the analog-to-digital-convertors before digitizing them in parallel. The entire sub-picture (21) may be digitized in one step. The routing block (10) may comprise an analog bus (9). The image sensor (1) further comprises a control circuit (8) for controlling the routing block (10) for routing pixel values on the column lines (COL) to a subset of the buffer array, the control circuit being adapted for supporting sub-pictures (21) with programmable positions and/or sizes.
摘要:
An image sensor (810) comprises a plurality of image pixels (R, G, B) and a plurality of focus-pixels (F), each focus-pixel comprising a light shield (51a, 51b) for partly shielding the focus-pixel from incident light so as to obtain a focus-related signal in a first mode of operation. The image sensor further comprises additional circuitry for processing the focus-related signal, which additional circuitry is conveniently located underneath the light shields. The additional circuitry may be adapted for accumulating the charge of two focus-pixels (F1a, F2a), e.g. by charge binning, and for providing the accumulated charge in a second mode of operation.
摘要:
An array comprises a plurality of pixels logically arranged in rows and columns. The pixels comprise a photoreceptor (11) for converting impinging radiation into electronic charge, a transfer element (12) for transferring the electronic charge towards a sense node, a reset transistor (13) for resetting the sense node (16), means for converting the electronic charge onto the sense node (16) into a voltage, and for outputting the voltage as a pixel signal, and means adapted for biasing the sense nodes at a low voltage lower than a reset voltage which is meant to initialise the photoreceptor, during integration of impinging radiation on the photoreceptors.The means for converting and outputting comprise a source follower (14) for converting the electronic charge, and a select transistor (15) for outputting the voltage as a pixel signal, and the reset transistor of at least one pixel is coupled with one main electrode to the gate of the reset transistor of another pixel.
摘要:
A CMOS imaging facility is implemented on a substrate through a set of pixel circuits that are array-wise organized in lines and columns and each comprise a radiation-to-charge accumulator (20), a transfer transistor (22) for transferring a representation of the charge, a reset transistor (24) fed by a reference voltage and a source follower transistor (26) for feeding a select transistor (28) that feeds the representation to an output array conductor. In particular, for respective pairs of adjacent column conductors the associated pixel transfer transistors will controllably pair wise share the accumulators in an interlace organization.
摘要:
An image sensor (1) comprising: an array (2) of pixels logically organized in rows and columns, the outputs of the pixels being connected to column lines (COLx) connectable to an array of buffers (3) via a routing block (10), the buffers being connected to an array of A/D convertors (4), the routing block (10) having a group of switches (6, 7) for reading sub-picture data, whereby the values of at least two rows of the sub-picture are distributed over the analog-to-digital-convertors before digitizing them in parallel. The entire sub-picture (21) may be digitized in one step. The routing block (10) may comprise an analog bus (9). The image sensor (1) further comprises a control circuit (8) for controlling the routing block (10) for routing pixel values on the column lines (COL) to a subset of the buffer array, the control circuit being adapted for supporting sub-pictures (21) with programmable positions and/or sizes.
摘要:
An image sensor (810) comprises a plurality of image pixels (R, G, B) and a plurality of focus-pixels (F), each focus-pixel comprising a light shield (51a, 51b) for partly shielding the focus-pixel from incident light so as to obtain a focus-related signal in a first mode of operation. The image sensor further comprises additional circuitry for processing the focus-related signal, which additional circuitry is conveniently located underneath the light shields. The additional circuitry may be adapted for accumulating the charge of two focus-pixels (F1a, F2a), e.g. by charge binning, and for providing the accumulated charge in a second mode of operation.