摘要:
A method of prefetching data in a hard disk drive includes searching for a logic block address (LBA) of data requested by an external apparatus in a history of a non-volatile cache of the hard disk drive, and if the LBA of the data is stored in the history, storing data recorded in a LBA stored after the LBA of the data requested by the external apparatus from among LBAs stored in the history in a buffer of the hard disk drive.
摘要:
A method of prefetching data in a hard disk drive includes searching for a logic block address (LBA) of data requested by an external apparatus in a history of a non-volatile cache of the hard disk drive, and if the LBA of the data is stored in the history, storing data recorded in a LBA stored after the LBA of the data requested by the external apparatus from among LBAs stored in the history in a buffer of the hard disk drive.
摘要:
A solid state drive (SSD) including a storage that includes a plurality of flash memories configured to be independently drivable and a controller to receive an input/output (I/O) request from a host, to split the I/O request into a plurality of sub-requests each having a size configured to be capable of being processed independently by each flash memory, and to process the I/O request based on the sub-requests.
摘要:
A solid state drive (SSD) including a storage that includes a plurality of flash memories configured to be independently drivable and a controller to receive an input/output (I/O) request from a host, to split the I/O request into a plurality of sub-requests each having a size configured to be capable of being processed independently by each flash memory, and to process the I/O request based on the sub-requests.
摘要:
A non-volatile mass storage memory and an input/output processing method using the memory are provided. The memory device includes a storage unit including a non-volatile random access memory and a flash memory and a controller to control the storage to process an input/output request. Accordingly, system memories having different purposes and functionalities, such as a flash memory and a dynamic random access memory (DRAM), may be integrated with each other.
摘要:
A memory system includes a variable resistance memory configured to input and output data by a first unit and a translation layer for managing the degree of wear of the variable resistance memory by a second unit, different from the first unit.
摘要:
A method and apparatus for writing data to and reading data from a phase-change random access memory (PRAM) include encoding original data using a predetermined encoding function, selecting data, from among the original data and the encoded data, which require less power when being written to the PRAM, writing the selected data to the PRAM, generating marking information related to the selected data, and writing the marking information to the PRAM. Therefore, power consumption can be reduced when data are written to the PRAM.
摘要:
A method and apparatus for writing data to and reading data from a phase-change random access memory (PRAM) include encoding original data using a predetermined encoding function, selecting data, from among the original data and the encoded data, which require less power when being written to the PRAM, writing the selected data to the PRAM, generating marking information related to the selected data, and writing the marking information to the PRAM. Therefore, power consumption can be reduced when data are written to the PRAM.
摘要:
A solid state drive (SSD) including a storage that includes a plurality of flash memories configured to be independently drivable and a controller to receive an input/output (I/O) request from a host, to split the I/O request into a plurality of sub-requests each having a size configured to be capable of being processed independently by each flash memory, and to process the I/O request based on the sub-requests.
摘要:
A memory system includes a variable resistance memory configured to input and output data by a first unit and a translation layer for managing the degree of wear of the variable resistance memory by a second unit, different from the first unit.