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    RETRANSMISSION AND DELAYED ACK TIMER MANAGEMENT LOGIC FOR TCP PROTOCOL
    3.
    发明申请
    RETRANSMISSION AND DELAYED ACK TIMER MANAGEMENT LOGIC FOR TCP PROTOCOL 失效
    TCP协议的延迟和延迟确认定时器管理逻辑

    公开(公告)号：US20090241001A1

    公开(公告)日：2009-09-24

    申请号：US11721213

    申请日：2005-12-06

    申请人： Chan-ho Park ,  Kyoung Park ,  Myung-Joon Kim

    发明人： Chan-ho Park ,  Kyoung Park ,  Myung-Joon Kim

    IPC分类号： H04L1/18 ,  G06F11/14

    CPC分类号： H04L69/16 ,  H04L1/1854 ,  H04L1/188 ,  H04L47/10 ,  H04L47/193 ,  H04L47/323 ,  H04L69/12 ,  H04L69/161 ,  H04L69/163

    摘要： Provided is an apparatus for detection timeout of each channel, which is a socket connection, in a Transmission Control Protocol (TCP) Offload Engine (TOE) using TCP accelerating hardware, and a method thereof. The timer managing apparatus of the TOE using the TCP accelerating hardware, including: a command register for receiving a command for a retransmission timer or a delayed ACK timer from an embedded processor of the TOE; a finite state machine (FSM) for storing information of a timer in operation by analyzing the command for the retransmission timer or the delayed ACK timer stored in the command register and controlling an entire operation of the timer managing apparatus; and a timeout checker for checking timeout of a timer in operation by using the stored timer information and notifying the timeout to the FSM.

    摘要翻译： 提供了一种使用TCP加速硬件的传输控制协议（TCP）卸载引擎（TOE）中的每个信道的检测超时的装置，其是套接字连接及其方法。 使用TCP加速硬件的TOE的定时器管理装置，包括：从TOE的嵌入式处理器接收重发定时器的命令或延迟的ACK定时器的命令寄存器; 用于通过分析存储在命令寄存器中的重传定时器或延迟ACK定时器的命令来存储定时器的操作信息的有限状态机（FSM），并控制定时器管理装置的整个操作; 以及一个超时检查器，用于通过使用存储的定时器信息来检查正在运行的定时器的超时并通知超时给FSM。

    High voltage semiconductor device having high breakdown voltage and method of fabricating the same
    4.
    发明授权
    High voltage semiconductor device having high breakdown voltage and method of fabricating the same 有权

    公开(公告)号：US07129542B2

    公开(公告)日：2006-10-31

    申请号：US10714607

    申请日：2003-11-18

    申请人： Chan-ho Park

    发明人： Chan-ho Park

    IPC分类号： H01L31/62 ,  H01L31/119

    CPC分类号： H01L29/66295 ,  H01L29/0661 ,  H01L29/732

    摘要： A high voltage semiconductor device, including: a high concentration collector area of a first conductive type; a low concentration collector area of a first conductive type formed on the high concentration collector area; a base area of a second conductive type formed on the low concentration collector area and having a trench perforating the low concentration collector area in a vertical direction at the edge of the trench; a high concentration emitter area of a first conductive type formed on a predetermined upper surface of the base area; and an emitter electrode, a base electrode, and a collector electrode isolated from one another and connected to the emitter area, the base area, and the collector area, respectively. High breakdown voltage can be obtained with a narrow junction termination area due to the trench.

    Bipolar transistors and methods of manufacturing the same
    6.
    发明授权
    Bipolar transistors and methods of manufacturing the same 有权
    双极晶体管及其制造方法相同

    公开(公告)号：US06911715B2

    公开(公告)日：2005-06-28

    申请号：US10655820

    申请日：2003-09-05

    申请人： Chan-ho Park ,  Jin-myung Kim ,  Kyeong-seok Park ,  Dong-ho Hyun

    发明人： Chan-ho Park ,  Jin-myung Kim ,  Kyeong-seok Park ,  Dong-ho Hyun

    IPC分类号： H01L21/331 ,  H01L27/082 ,  H01L29/08 ,  H01L29/73 ,  H01L29/732 ,  H01L31/0336

    CPC分类号： H01L29/0821 ,  H01L29/73 ,  H01L29/732

    摘要： A bipolar transistor in which the occurrence of Kirk effect is suppressed when a high current is injected into the bipolar transistor and a method of fabricating the bipolar transistor are described. The bipolar transistor includes a first collector region of a first conductive type having high impurity concentration, a second collector region of a first conductive type which has high impurity concentration and is formed on the first collector region, a base region of a second conductive type being formed a predetermined portion of the second collector region, and an emitter region of a first conductive type being formed in the base region. The bipolar transistor further includes the third collector region, which has higher impurity concentration than the second collector region, at the bottom of the base region. Therefore, it is possible to prevent the base region from extending toward the second collector region due to the third collector region when a high current is injected into the bipolar transistor, thereby improving the capability of driving a current of the bipolar transistor and preventing the occurrence of Kirk effect even during the injection of a high current.

    摘要翻译： 描述了当高电流注入双极晶体管时抑制Kirk效应的发生的双极晶体管和制造双极晶体管的方法。 双极晶体管包括具有高杂质浓度的第一导电类型的第一集电极区域，具有高杂质浓度并形成在第一集电极区域上的第一导电类型的第二集电极区域，第二导电类型的基极区域是 形成第二集电极区域的预定部分，并且在基极区域中形成第一导电类型的发射极区域。 双极晶体管还包括在基极区底部具有比第二集电极区域更高的杂质浓度的第三集电极区域。 因此，当高电流注入双极晶体管时，可以防止基极区域由于第三集电极区域而朝向第二集电极区域延伸，从而提高驱动双极晶体管的电流并防止发生的能力 柯克效应甚至在注入高电流时。

    Power semiconductor device using semi-insulating polycrystalline silicon
    7.
    发明授权
    Power semiconductor device using semi-insulating polycrystalline silicon 有权
    使用半绝缘多晶硅的功率半导体器件

    公开(公告)号：US06281548B1

    公开(公告)日：2001-08-28

    申请号：US09247507

    申请日：1999-02-10

    申请人： Chan-ho Park ,  Jin-kyeong Kim ,  Jae-hong Park

    发明人： Chan-ho Park ,  Jin-kyeong Kim ,  Jae-hong Park

    IPC分类号： H01L21336

    CPC分类号： H01L29/402 ,  H01L29/66136 ,  H01L29/66295 ,  H01L29/7322

    摘要： A power semiconductor device having an improved high breakdown voltage and improved productivity, and a fabrication method thereof are provided. The power semiconductor includes a collector region of a first conductivity type formed in a semiconductor substrate, a base region of second conductivity type formed in the collector region, and an emitter region of the first conductivity type formed in the base region. A channel stop region is formed being spaced a predetermined distance from the base region. An insulative film, a semi-insulating polycrystalline silicon (SIPOS) film, and a nitride film patterned respectively to expose the emitter region, the base region, and the channel stop region are sequentially deposited on the semiconductor substrate. A base electrode, an emitter electrode, and an equipotential electrode connected respectively to the base region, the emitter region, and the channel stop region are formed.

    摘要翻译： 提供了具有改进的高击穿电压和提高的生产率的功率半导体器件及其制造方法。 功率半导体包括形成在半导体衬底中的第一导电类型的集电极区域，形成在集电极区域中的第二导电类型的基极区域和形成在基极区域中的第一导电类型的发射极区域。 形成与基部区域隔开预定距离的通道停止区域。 分别在半导体衬底上沉积绝缘膜，半绝缘多晶硅（SIPOS）膜和分别图案化以暴露发射极区域，基极区域和沟道停止区域的氮化物膜。 形成分别连接到基极区域，发射极区域和沟道停止区域的基极，发射极电极和等电位电极。

    ELECTRODE CATALYST FOR FUEL CELL AND FUEL CELL INCLUDING ELECTRODE HAVING ELECTRODE CATALYST
    8.
    发明申请
    ELECTRODE CATALYST FOR FUEL CELL AND FUEL CELL INCLUDING ELECTRODE HAVING ELECTRODE CATALYST 审中-公开
    用于燃料电池和燃料电池的电极催化剂，包括具有电极催化剂的电极

    公开(公告)号：US20100151296A1

    公开(公告)日：2010-06-17

    申请号：US12634043

    申请日：2009-12-09

    申请人： Kang Hee Lee ,  Kyung-jung Kwon ,  Chan-ho Park ,  Seon-ah Jin

    发明人： Kang Hee Lee ,  Kyung-jung Kwon ,  Chan-ho Park ,  Seon-ah Jin

    IPC分类号： H01M8/10 ,  H01M4/00 ,  H01M4/88

    CPC分类号： H01M4/86 ,  H01M4/90 ,  H01M4/9083 ,  H01M4/921 ,  H01M4/926 ,  H01M8/1007

    摘要： An electrode catalyst for a fuel cell and a fuel cell including an electrode having the electrode catalyst, include a non-platinum (Pt) catalyst, and a cerium (Ce) metal catalyst, both of which are supported on a carbon-based catalyst support having an improved catalytic activity at a decreased cost. The non-Pt catalyst may be at least one selected from the group consisting of Mn, Pd, Ir, Au, Cu, Co, Ni, Fe, Ru, WC, W, Mo, Se, any alloys thereof, and any mixtures thereof, and the Ce metal catalyst may be a Ce oxide.

    摘要翻译： 用于燃料电池的电极催化剂和包括具有电极催化剂的电极的燃料电池包括负载在碳基催化剂载体上的非铂（Pt）催化剂和铈（Ce）金属催化剂， 以降低的成本具有改善的催化活性。 非Pt催化剂可以是选自Mn，Pd，Ir，Au，Cu，Co，Ni，Fe，Ru，WC，W，Mo，Se中的至少一种，其任何合金及其任何混合物 ，Ce金属催化剂可以是Ce氧化物。

    CARBON NANOTUBES FOR FUEL CELLS, METHOD FOR MANUFACTURING THE SAME, AND FUEL CELL USING THE SAME
    9.
    发明申请
    CARBON NANOTUBES FOR FUEL CELLS, METHOD FOR MANUFACTURING THE SAME, AND FUEL CELL USING THE SAME 有权
    用于燃料电池的碳纳米管，其制造方法和使用该燃料电池的燃料电池

    公开(公告)号：US20100018851A1

    公开(公告)日：2010-01-28

    申请号：US12511468

    申请日：2009-07-29

    申请人： Won-bong CHOI ,  Jae-uk Chu ,  Chan-ho Park ,  Hyuk Chang

    发明人： Won-bong CHOI ,  Jae-uk Chu ,  Chan-ho Park ,  Hyuk Chang

    IPC分类号： C01B31/02 ,  D01F9/12

    CPC分类号： H01M4/8605 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  H01M4/9083 ,  H01M4/926 ,  H01M2008/1095 ,  Y10S977/70 ,  Y10S977/701 ,  Y10S977/72 ,  Y10S977/743 ,  Y10S977/843 ,  Y10S977/847

    摘要： Carbon nanotubes for use in a fuel cell, a method for fabricating the same, and a fuel cell using the carbon nanotubes for its electrode are provided. The internal and external walls of the carbon nanotubes are doped with nano-sized metallic catalyst particles uniformly to a degree of 0.3-5 mg/cm2. The carbon nanotubes are grown over a carbon substrate using chemical vapor deposition or plasma enhanced chemical vapor deposition. Since the carbon nanotubes have a large specific surface area, and metallic catalyst particles are uniformly distributed over the internal and external walls thereof, the reaction efficiency in an electrode becomes maximal when the carbon nanotubes are used for the electrode of a fuel cell. The carbon nanotubes fabricated using the method can be applied to form a large electrode. The carbon nanotubes grown over the carbon substrate can be readily applied to an electrode of a fuel cell, providing economical advantages and simplifying the overall electrode manufacturing process. A fuel cell using as the carbon nanotubes for its electrode provides improved performance.

    摘要翻译： 提供了用于燃料电池的碳纳米管，其制造方法和使用该碳纳米管作为其电极的燃料电池。 碳纳米管的内壁和外壁均匀掺杂有纳米尺寸的金属催化剂颗粒至0.3-5mg / cm2的程度。 使用化学气相沉积或等离子体增强化学气相沉积在碳衬底上生长碳纳米管。 由于碳纳米管具有大的比表面积，并且金属催化剂颗粒均匀地分布在其内壁和外壁上，所以当将碳纳米管用于燃料电池的电极时，电极中的反应效率最大。 使用该方法制造的碳纳米管可以应用于形成大电极。 生长在碳基板上的碳纳米管可以容易地应用于燃料电池的电极，提供经济的优点并简化整个电极的制造过程。 使用作为其电极的碳纳米管的燃料电池提供改进的性能。

    Power semiconductor device using semi-insulating polycrystalline silicon and fabrication method thereof
    10.
    发明授权
    Power semiconductor device using semi-insulating polycrystalline silicon and fabrication method thereof 有权
    使用半绝缘多晶硅的功率半导体器件及其制造方法

    公开(公告)号：US06346444B1

    公开(公告)日：2002-02-12

    申请号：US09653550

    申请日：2000-08-31

    申请人： Chan-ho Park ,  Jin-kyeong Kim ,  Jae-hong Park

    发明人： Chan-ho Park ,  Jin-kyeong Kim ,  Jae-hong Park

    IPC分类号： H01L21336

    CPC分类号： H01L29/402 ,  H01L29/66136 ,  H01L29/66295 ,  H01L29/7322

    摘要： A power semiconductor device having an improved high breakdown voltage and improved productivity, and a fabrication method thereof are provided. The power semiconductor includes a collector region of a first conductivity type formed in a semiconductor substrate, a base region of second conductivity type formed in the collector region, and an emitter region of the first conductivity type formed in the base region. A channel stop region is formed being spaced a predetermined distance from the base region. An insulative film, a semi-insulating polycrystalline silicon (SIPOS) film, and a nitride film patterned respectively to expose the emitter region, the base region, and the channel stop region are sequentially deposited on the semiconductor substrate. A base electrode, an emitter electrode, and an equipotential electrode connected respectively to the base region, the emitter region, and the channel stop region are formed.

    摘要翻译： 提供了具有改进的高击穿电压和提高的生产率的功率半导体器件及其制造方法。 功率半导体包括形成在半导体衬底中的第一导电类型的集电极区域，形成在集电极区域中的第二导电类型的基极区域和形成在基极区域中的第一导电类型的发射极区域。 形成与基部区域隔开预定距离的通道停止区域。 分别在半导体衬底上沉积绝缘膜，半绝缘多晶硅（SIPOS）膜和分别图案化以暴露发射极区域，基极区域和沟道停止区域的氮化物膜。 形成分别连接到基极区域，发射极区域和沟道停止区域的基极，发射极电极和等电位电极。