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1.发明申请公开(公告)号：US20140209952A1
公开(公告)日：2014-07-31
申请号：US14229713
申请日：2014-03-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Hee YE , Chang Youn Kim , Jin Cheol Shin , Joon Hee Lee , Jong Kyun You , Hong Chol Lim
CPC classification number: H01L33/46 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/387 , H01L33/42 , H01L33/44
Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.
Abstract translation: 一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。
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公开(公告)号：US09455378B2
公开(公告)日：2016-09-27
申请号：US14229713
申请日：2014-03-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Hee Ye , Chang Youn Kim , Jin Cheol Shin , Joon Hee Lee , Jong Kyun You , Hong Chol Lim
CPC classification number: H01L33/46 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/387 , H01L33/42 , H01L33/44
Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.
Abstract translation: 一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。
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