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公开(公告)号：US20190067540A1
公开(公告)日：2019-02-28
申请号：US16024423
申请日：2018-06-29
发明人： Jong Hyeon Chae , So Ra Lee , Kyung Hee Ye
摘要： A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.
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公开(公告)号：US20180226553A1
公开(公告)日：2018-08-09
申请号：US15942510
申请日：2018-03-31
发明人： Jong Hyeon Chae , So Ra Lee , Kyung Hee Ye
摘要： A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.
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公开(公告)号：US09018669B2
公开(公告)日：2015-04-28
申请号：US14231043
申请日：2014-03-31
发明人： Won Cheol Seo , Dae Sung Cho , Kyung Hee Ye , Kyoung Wan Kim , Yeo Jin Yoon
CPC分类号： H01L33/387 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
摘要翻译： 衬底，布置在衬底上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层，第一导电类型半导体层 电连接到第一导电型半导体层的电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极焊盘之间的绝缘层，以及至少一个电连接 到所述第二电极焊盘，所述至少一个上延伸部电连接到所述第二导电型半导体层。
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公开(公告)号：US20180248094A1
公开(公告)日：2018-08-30
申请号：US15965808
申请日：2018-04-27
发明人： Jong Hyeon Chae , So Ra Lee , Kyung Hee Ye
摘要： light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.
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公开(公告)号：US09716210B2
公开(公告)日：2017-07-25
申请号：US14690036
申请日：2015-04-17
发明人： Kwang Joong Kim , Chang Suk Han , Kyung Hee Ye , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
CPC分类号： H01L33/06 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/0025 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/32
摘要： Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.
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公开(公告)号：US20160315226A1
公开(公告)日：2016-10-27
申请号：US15200633
申请日：2016-07-01
发明人： Won Cheol Seo , Dae Sung Cho , Kyung Hee Ye , Kyoung Wan Kim , Yeo Jin Yoon
CPC分类号： H01L33/387 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
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公开(公告)号：US09012952B2
公开(公告)日：2015-04-21
申请号：US14229672
申请日：2014-03-28
发明人： Won Cheol Seo , Dae Sung Cho , Kyung Hee Ye , Kyoung Wan Kim , Yeo Jin Yoon
CPC分类号： H01L33/387 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
摘要翻译： 本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层 垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。
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公开(公告)号：US10418514B2
公开(公告)日：2019-09-17
申请号：US15643403
申请日：2017-07-06
发明人： Kwang Joong Kim , Chang Suk Han , Kyung Hee Ye , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
摘要： Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.
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公开(公告)号：US10069055B2
公开(公告)日：2018-09-04
申请号：US15667599
申请日：2017-08-02
发明人： Jong Hyeon Chae , So Ra Lee , Kyung Hee Ye
摘要： A light emitting device includes a first bonding pad configured to be mounted to a substrate, a first electrode electrically connected to the first bonding pad, a first conductive type semiconductor layer having a middle area disposed between two, opposing end areas, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer and connected to the first electrode; and a first contact portion and a plurality of second contact portions disposed on the first conductive type semiconductor layer, in which the first contact portion is disposed adjacent one end area of the first conductive type semiconductor layer, the second contact portions are disposed in the middle area of the first conductive type semiconductor layer, and the first bonding pad exposes at least one of the second contact portion.
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公开(公告)号：US09793440B2
公开(公告)日：2017-10-17
申请号：US15200633
申请日：2016-07-01
发明人： Won Cheol Seo , Dae Sung Cho , Kyung Hee Ye , Kyoung Wan Kim , Yeo Jin Yoon
IPC分类号： H01L33/00 , H01L33/38 , H01L33/08 , H01L33/20 , H01L33/44 , H01L33/42 , H01L33/62 , H01L33/32
CPC分类号： H01L33/387 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
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