公开(公告)号：US20160380149A1

公开(公告)日：2016-12-29

申请号：US15257139

申请日：2016-09-06

Applicant: Seoul Viosys Co., Ltd.

Inventor： Joo Won CHOI ,  Dong Sun Lee ,  Gyu Beom KIM ,  Sang Joon LEE

IPC: H01L33/06 ,  H01L33/32

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/34333

Abstract: A light emitting diode includes an N-type GaN-based semiconductor compound layer, a P-type GaN-based semiconductor compound layer, and an active region disposed between the P-type and N-type layers, the active region comprising alternately laminated well layers and barrier layers. The well layers comprise AlxInyGa1−(x+y)N, where 0≦x, y≦1, the barrier layers comprise AlxInyGa1−(x+y)N, where 0≦x, y≦1, and at least one of the barrier layers comprises first and second layers having different compositions.

Abstract translation: 发光二极管包括N型GaN基半导体化合物层，P型GaN基半导体化合物层和设置在P型和N型层之间的有源区，活性区包括交替层叠的 层和阻挡层。 阱层包括Al x In y Ga 1-（x + y）N，其中0≤x，y≤1，势垒层包括Al x In y Ga 1-（x + y）N，其中0≤x，y≤1，以及至少一个 阻挡层包括具有不同组成的第一和第二层。