公开(公告)号：US20060154460A1

公开(公告)日：2006-07-13

申请号：US11293126

申请日：2005-12-05

申请人： Serah Yun ,  Changki Hong ,  Jaedong Lee ,  Juseon Goo ,  Youngok Kim ,  Jeongheon Park ,  Joonsang Park ,  Keunhee Bai ,  Myoungho Jung

发明人： Serah Yun ,  Changki Hong ,  Jaedong Lee ,  Juseon Goo ,  Youngok Kim ,  Jeongheon Park ,  Joonsang Park ,  Keunhee Bai ,  Myoungho Jung

IPC分类号： H01L21/4763

CPC分类号： H01L21/76897

摘要： In one aspect, a self-aligned contact method is provided in which a substrate having a plurality of structures are spaced apart over a surface of the substrate, and a sacrificial film is deposited over and between the plurality of structures, where a material of the sacrificial film has a given withstand temperature. The sacrificial film is patterned to expose a portion of the substrate adjacent the plurality of structures. An insulating layer is deposited over the sacrificial film and the exposed portion of the substrate, where the depositing of the insulating layer includes a heat treatment at a temperature which is less than the withstand temperature of the sacrificial film material. The insulating layer is planarized to expose the sacrificial film, and the sacrificial film is removed to expose respective areas between the plurality of structures. The respective areas between the plurality of structures are filled with a conductive material.

摘要翻译： 在一个方面，提供一种自对准接触方法，其中具有多个结构的衬底在衬底的表面上间隔开，并且牺牲膜沉积在多个结构之间并且在多个结构之间，其中， 牺牲膜具有给定的耐受温度。 牺牲膜被图案化以暴露与多个结构相邻的衬底的一部分。 绝缘层沉积在牺牲膜和衬底的暴露部分上，其中绝缘层的沉积包括在小于牺牲膜材料的耐受温度的温度下的热处理。 平面化绝缘层以暴露牺牲膜，并且去除牺牲膜以暴露多个结构之间的相应区域。 多个结构之间的各个区域填充有导电材料。

公开(公告)号：US09673300B2

公开(公告)日：2017-06-06

申请号：US14820860

申请日：2015-08-07

申请人： Seungseok Ha ,  Keunhee Bai ,  Kyounghwan Yeo ,  Eunsil Park ,  Heonjong Shin

发明人： Seungseok Ha ,  Keunhee Bai ,  Kyounghwan Yeo ,  Eunsil Park ,  Heonjong Shin

IPC分类号： H01L21/762 ,  H01L29/66

CPC分类号： H01L29/66795 ,  H01L21/76229 ,  H01L29/66545

摘要： Semiconductor devices and methods of fabricating the same are provided. The methods may include forming an isolation region defining a fin active region, forming a sacrificial field gate pattern on the isolation region and forming a sacrificial fin gate pattern on the fin active region. The method may also include forming a field gate cut zone comprising a first recess exposing a surface of the isolation region and a fin active cut zone comprising a second recess exposing a surface of the fin active region, forming a fin active recess in the second recess of the fin active cut zone and forming a field gate core and a fin active core by forming an insulation material in the first recess of the field gate cut zone and the fin active recess, respectively.