公开(公告)号：US09673300B2

公开(公告)日：2017-06-06

申请号：US14820860

申请日：2015-08-07

申请人： Seungseok Ha ,  Keunhee Bai ,  Kyounghwan Yeo ,  Eunsil Park ,  Heonjong Shin

发明人： Seungseok Ha ,  Keunhee Bai ,  Kyounghwan Yeo ,  Eunsil Park ,  Heonjong Shin

IPC分类号： H01L21/762 ,  H01L29/66

CPC分类号： H01L29/66795 ,  H01L21/76229 ,  H01L29/66545

摘要： Semiconductor devices and methods of fabricating the same are provided. The methods may include forming an isolation region defining a fin active region, forming a sacrificial field gate pattern on the isolation region and forming a sacrificial fin gate pattern on the fin active region. The method may also include forming a field gate cut zone comprising a first recess exposing a surface of the isolation region and a fin active cut zone comprising a second recess exposing a surface of the fin active region, forming a fin active recess in the second recess of the fin active cut zone and forming a field gate core and a fin active core by forming an insulation material in the first recess of the field gate cut zone and the fin active recess, respectively.

公开(公告)号：US09978746B2

公开(公告)日：2018-05-22

申请号：US15059423

申请日：2016-03-03

申请人： Kyoung Hwan Yeo ,  KeunHee Bai ,  Seungseok Ha ,  Eunsil Park ,  Sunhom Steve Paak ,  Heonjong Shin ,  Dongho Cha

发明人： Kyoung Hwan Yeo ,  KeunHee Bai ,  Seungseok Ha ,  Eunsil Park ,  Sunhom Steve Paak ,  Heonjong Shin ,  Dongho Cha

IPC分类号： H01L27/088 ,  H01L29/06 ,  H01L27/11 ,  H01L21/8234

CPC分类号： H01L27/088 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/1104 ,  H01L29/0653 ,  H01L29/7848

摘要： Provided is a semiconductor device with a field effect transistor. The semiconductor device may include a substrate including an active pattern, a separation structure crossing the active pattern and dividing the active pattern into first and second region. The separation structure may include a first insulating pattern that fills a recess region between the first and second regions. The first insulating pattern may have a concave top surface.

公开(公告)号：US20160307890A1

公开(公告)日：2016-10-20

申请号：US15059423

申请日：2016-03-03

申请人： Kyoung Hwan Yeo ,  KeunHee Bai ,  Seungseok Ha ,  Eunsil Park ,  Sunhom Steve Paak ,  Heonjong Shin ,  Dongho Cha

发明人： Kyoung Hwan Yeo ,  KeunHee Bai ,  Seungseok Ha ,  Eunsil Park ,  Sunhom Steve Paak ,  Heonjong Shin ,  Dongho Cha

IPC分类号： H01L27/088 ,  H01L29/06 ,  H01L27/105

CPC分类号： H01L27/088 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/1104 ,  H01L29/0653 ,  H01L29/7848

摘要： Provided is a semiconductor device with a field effect transistor. The semiconductor device may include a substrate including an active pattern, a separation structure crossing the active pattern and dividing the active pattern into first and second region. The separation structure may include a first insulating pattern that fills a recess region between the first and second regions. The first insulating pattern may have a concave top surface.

摘要翻译： 提供了具有场效应晶体管的半导体器件。 半导体器件可以包括包括有源图案的衬底，与有源图案交叉的分离结构，并将活性图案分成第一和第二区域。 分离结构可以包括填充第一和第二区域之间的凹部区域的第一绝缘图案。 第一绝缘图案可以具有凹的顶表面。

公开(公告)号：US09728643B2

公开(公告)日：2017-08-08

申请号：US14974018

申请日：2015-12-18

申请人： Byungjae Park ,  Heonjong Shin ,  Hagju Cho ,  Kyounghwan Yeo

发明人： Byungjae Park ,  Heonjong Shin ,  Hagju Cho ,  Kyounghwan Yeo

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66

CPC分类号： H01L29/785 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66545

摘要： A semiconductor device including a fin active region protruding from a substrate and an isolation region defining the fin active region, a gate pattern intersecting the fin active region and the isolation region, and gate spacer formed on a side surface of the gate pattern and extending onto a surface of the isolation region is provided.

公开(公告)号：US5300816A

公开(公告)日：1994-04-05

申请号：US904613

申请日：1992-06-26

申请人： Jeungwoo Lee ,  Myoungseob Shim ,  Heonjong Shin

发明人： Jeungwoo Lee ,  Myoungseob Shim ,  Heonjong Shin

IPC分类号： H01L21/02 ,  H01L21/304 ,  H01L21/312 ,  H01L21/78 ,  H01L27/00 ,  H01L23/48 ,  H01L29/44 ,  H01L29/46

CPC分类号： H01L21/312 ,  H01L21/3043 ,  H01L21/78

摘要： A semiconductor wafer partitioned into a multiplicity of chip areas defined by a grid-like array of scribe lines inscribed into the surface of the wafer, wherein each scribe line is longitudinally bounded by respective field oxide layers formed in the surface of the wafer, to thereby define a scribe line region between adjacent chip areas. The wafer includes a multiplicity of integrated circuits formed in a corresponding multiplicity of the chip areas, respectively, each of the integrated circuits including a patterned, multilayer structure having a peripheral edge portion which extends into a respective one of the scribe line regions, wherein the peripheral edge portion of each multilayer structure has a multi-tiered cross-sectional profile, thereby ensuring adequate step coverage of the photoresist film which is applied to the individual layers of the multilayer structures when they are patterned during the wafer fabrication process.

摘要翻译： 半导体晶片被划分为由刻划在晶片表面上的划线的格子状阵列限定的多个芯片区域，其中每个划线由在晶片表面形成的相应的场氧化物层纵向界定，从而 定义相邻芯片区域之间的划线区域。 晶片包括分别形成在相应多个芯片区域中的多个集成电路，每个集成电路包括图案化的多层结构，其具有延伸到相应的划线区域中的周边边缘部分，其中， 每个多层结构的周缘部分具有多层横截面轮廓，从而确保在晶片制造过程中图案化时施加到多层结构的各个层的光致抗蚀剂膜的足够的台阶覆盖。