公开(公告)号：US20110065246A1

公开(公告)日：2011-03-17

申请号：US12942255

申请日：2010-11-09

申请人： Seung-Yun LEE ,  Sang ouk RYU ,  Sung Min YOON ,  Young Sam PARK ,  Kyu-Jeong CHOI ,  Nam-Yeal LEE ,  Byoung-Gon YU

发明人： Seung-Yun LEE ,  Sang ouk RYU ,  Sung Min YOON ,  Young Sam PARK ,  Kyu-Jeong CHOI ,  Nam-Yeal LEE ,  Byoung-Gon YU

IPC分类号： H01L21/8249

CPC分类号： H01L27/0635 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/008 ,  G11C2213/79 ,  H01L21/8249 ,  H01L27/2445 ,  H01L45/06 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  Y10S438/947

摘要： An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.

摘要翻译： 提供了高性能多功能SOC所需的嵌入式存储器及其制造方法。 存储器包括在衬底上相邻并电连接的双极晶体管，相变存储器件和MOS晶体管。 双极晶体管包括由设置在集电极上的SiGe组成的基极。 相变存储器件具有通过电流从非晶状态转变为结晶态的相变材料层和由与相变材料层的下表面接触的SiGe构成的加热层。

公开(公告)号：US20130093093A1

公开(公告)日：2013-04-18

申请号：US13338379

申请日：2011-12-28

申请人： Nam-Yeal LEE

发明人： Nam-Yeal LEE

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/5226 ,  H01L21/7682 ,  H01L21/76897 ,  H01L23/481 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53295 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/11517 ,  H01L29/401 ,  H01L29/45 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a substrate having a plurality of contact surfaces, an interlayer dielectric layer formed over the substrate and having a first open portion which exposes a part of the contact surfaces and a second open portion which exposes the other contact surfaces, a storage node contact (SNC) plug filling the first open portion, and a damascene structure filing the second open portion and including a bit line, a spacer formed on both sidewalls of the bit line, a capping layer formed over the bit line and the spacer, and an air gap formed between the bit line and the spacer. The bit line includes a conductive material of which the volume is contracted by a heat treatment to form the air gap.