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    Resistive memory device for programming resistance conversion layers and method thereof
    1.
    发明申请
    Resistive memory device for programming resistance conversion layers and method thereof 有权
    用于编程电阻转换层的电阻式存储器件及其方法

    公开(公告)号：US20090225583A1

    公开(公告)日：2009-09-10

    申请号：US12379158

    申请日：2009-02-13

    申请人： Seung-hoon Lee ,  Yoon-dong Park ,  Young-soo Park ,  Myung-jae Lee

    发明人： Seung-hoon Lee ,  Yoon-dong Park ,  Young-soo Park ,  Myung-jae Lee

    IPC分类号： G11C11/21 ,  G11C7/00

    CPC分类号： G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2013/0092 ,  G11C2213/32

    摘要： Example embodiments provide a method for programming a resistive memory device that includes a resistance conversion layer. The method may include applying multiple pulses to the resistance conversion layer. The multiple pulses may include at least two pulses, where a magnitude of each pulse of the at least two pulses is the same. A first pulse of the at least two pulses may be applied on one side of the resistance conversion layer and a second pulse of the at least two pulses may be applied on the other side of the resistance conversion layer. The applying step may be performed during a set programming operation or a reset programming operation. A resistive memory device for programming a resistance conversion layer may include a first and second electrode, a lower structure, and the resistance conversion layer coupled between the first and second electrodes. The resistance conversion layer may be configured to receive multiple pulses, where the multiple pulses include at least two pulses having the same magnitude.

    摘要翻译： 示例性实施例提供了一种用于对包括电阻转换层的电阻式存储器件进行编程的方法。 该方法可以包括将多个脉冲施加到电阻转换层。 多个脉冲可以包括至少两个脉冲，其中至少两个脉冲的每个脉冲的幅度相同。 至少两个脉冲的第一脉冲可以施加在电阻转换层的一侧，并且至少两个脉冲的第二脉冲可以施加在电阻转换层的另一侧上。 施加步骤可以在设定的编程操作或复位编程操作期间执行。 用于编程电阻转换层的电阻性存储器件可以包括第一和第二电极，下部结构以及耦合在第一和第二电极之间的电阻转换层。 电阻转换层可以被配置为接收多个脉冲，其中多个脉冲包括具有相同幅度的至少两个脉冲。

    Resistive memory device for programming resistance conversion layers and method thereof
    2.
    发明授权
    Resistive memory device for programming resistance conversion layers and method thereof 有权
    用于编程电阻转换层的电阻式存储器件及其方法

    公开(公告)号：US07940547B2

    公开(公告)日：2011-05-10

    申请号：US12379158

    申请日：2009-02-13

    申请人： Seung-hoon Lee ,  Yoon-dong Park ,  Young-soo Park ,  Myung-jae Lee

    发明人： Seung-hoon Lee ,  Yoon-dong Park ,  Young-soo Park ,  Myung-jae Lee

    IPC分类号： G11C11/00 ,  G11C17/00

    CPC分类号： G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2013/0092 ,  G11C2213/32

    摘要： Example embodiments provide a method for programming a resistive memory device that includes a resistance conversion layer. The method may include applying multiple pulses to the resistance conversion layer. The multiple pulses may include at least two pulses, where a magnitude of each pulse of the at least two pulses is the same. A first pulse of the at least two pulses may be applied on one side of the resistance conversion layer and a second pulse of the at least two pulses may be applied on the other side of the resistance conversion layer. The applying step may be performed during a set programming operation or a reset programming operation. A resistive memory device for programming a resistance conversion layer may include a first and second electrode, a lower structure, and the resistance conversion layer coupled between the first and second electrodes. The resistance conversion layer may be configured to receive multiple pulses, where the multiple pulses include at least two pulses having the same magnitude.

    摘要翻译： 示例性实施例提供了一种用于对包括电阻转换层的电阻式存储器件进行编程的方法。 该方法可以包括将多个脉冲施加到电阻转换层。 多个脉冲可以包括至少两个脉冲，其中至少两个脉冲的每个脉冲的幅度相同。 至少两个脉冲的第一脉冲可以施加在电阻转换层的一侧，并且至少两个脉冲的第二脉冲可以施加在电阻转换层的另一侧上。 施加步骤可以在设定的编程操作或复位编程操作期间执行。 用于编程电阻转换层的电阻性存储器件可以包括第一和第二电极，下部结构以及耦合在第一和第二电极之间的电阻转换层。 电阻转换层可以被配置为接收多个脉冲，其中多个脉冲包括具有相同幅度的至少两个脉冲。

    File system configuration method and apparatus for data security and for accessing same, and storage device accessed by same
    7.
    发明申请
    File system configuration method and apparatus for data security and for accessing same, and storage device accessed by same 审中-公开
    用于数据安全和访问的文件系统配置方法和装置，以及由其访问的存储设备

    公开(公告)号：US20100017446A1

    公开(公告)日：2010-01-21

    申请号：US12457167

    申请日：2009-06-02

    申请人： Dae-hoon Choi ,  Hyung-jo Yoon ,  Hyun-min Cho ,  Myung-jae Lee

    发明人： Dae-hoon Choi ,  Hyung-jo Yoon ,  Hyun-min Cho ,  Myung-jae Lee

    IPC分类号： G06F12/00 ,  G06F17/30 ,  G06F21/00

    CPC分类号： G06F21/606

    摘要： Provided are a file system configuration method and apparatus for data security, a method and apparatus for accessing a data security area formed by the same, and a data storage device accessed by the same. A method of configuring a file system comprising a general area in which general data is stored and a security area in which security data is stored, in a storage device, includes generating a first file system format corresponding to the general area to store the first file system format in a buffer; generating a second file system format corresponding to the security area and storing the second file system format in the buffer so as to allow an authorized user to read data stored in the general area and not to allow the authorized user to write data to the general area when the authorized user accesses the security area; and configuring the file system of the storage device by using the first and second file system formats stored in the buffer.

    摘要翻译： 提供了一种用于数据安全性的文件系统配置方法和装置，用于访问由其形成的数据安全区域的方法和装置以及由其访问的数据存储设备。 一种配置文件系统的方法，包括存储通用数据的一般区域和存储安全数据的安全区域的文件系统，包括生成与一般区域对应的第一文件系统格式以存储第一文件 缓冲区中的系统格式; 产生对应于安全区域的第二文件系统格式，并将第二文件系统格式存储在缓冲器中，以便允许授权用户读取存储在一般区域中的数据，而不允许授权用户将数据写入一般区域 当授权用户访问安全区域时; 以及通过使用存储在缓冲器中的第一和第二文件系统格式来配置存储设备的文件系统。