公开(公告)号：US07940547B2

公开(公告)日：2011-05-10

申请号：US12379158

申请日：2009-02-13

申请人： Seung-hoon Lee ,  Yoon-dong Park ,  Young-soo Park ,  Myung-jae Lee

发明人： Seung-hoon Lee ,  Yoon-dong Park ,  Young-soo Park ,  Myung-jae Lee

IPC分类号： G11C11/00 ,  G11C17/00

CPC分类号： G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2013/0092 ,  G11C2213/32

摘要： Example embodiments provide a method for programming a resistive memory device that includes a resistance conversion layer. The method may include applying multiple pulses to the resistance conversion layer. The multiple pulses may include at least two pulses, where a magnitude of each pulse of the at least two pulses is the same. A first pulse of the at least two pulses may be applied on one side of the resistance conversion layer and a second pulse of the at least two pulses may be applied on the other side of the resistance conversion layer. The applying step may be performed during a set programming operation or a reset programming operation. A resistive memory device for programming a resistance conversion layer may include a first and second electrode, a lower structure, and the resistance conversion layer coupled between the first and second electrodes. The resistance conversion layer may be configured to receive multiple pulses, where the multiple pulses include at least two pulses having the same magnitude.

摘要翻译： 示例性实施例提供了一种用于对包括电阻转换层的电阻式存储器件进行编程的方法。 该方法可以包括将多个脉冲施加到电阻转换层。 多个脉冲可以包括至少两个脉冲，其中至少两个脉冲的每个脉冲的幅度相同。 至少两个脉冲的第一脉冲可以施加在电阻转换层的一侧，并且至少两个脉冲的第二脉冲可以施加在电阻转换层的另一侧上。 施加步骤可以在设定的编程操作或复位编程操作期间执行。 用于编程电阻转换层的电阻性存储器件可以包括第一和第二电极，下部结构以及耦合在第一和第二电极之间的电阻转换层。 电阻转换层可以被配置为接收多个脉冲，其中多个脉冲包括具有相同幅度的至少两个脉冲。

公开(公告)号：US20090225583A1

公开(公告)日：2009-09-10

申请号：US12379158

申请日：2009-02-13

申请人： Seung-hoon Lee ,  Yoon-dong Park ,  Young-soo Park ,  Myung-jae Lee

发明人： Seung-hoon Lee ,  Yoon-dong Park ,  Young-soo Park ,  Myung-jae Lee

IPC分类号： G11C11/21 ,  G11C7/00

CPC分类号： G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2013/0092 ,  G11C2213/32

摘要： Example embodiments provide a method for programming a resistive memory device that includes a resistance conversion layer. The method may include applying multiple pulses to the resistance conversion layer. The multiple pulses may include at least two pulses, where a magnitude of each pulse of the at least two pulses is the same. A first pulse of the at least two pulses may be applied on one side of the resistance conversion layer and a second pulse of the at least two pulses may be applied on the other side of the resistance conversion layer. The applying step may be performed during a set programming operation or a reset programming operation. A resistive memory device for programming a resistance conversion layer may include a first and second electrode, a lower structure, and the resistance conversion layer coupled between the first and second electrodes. The resistance conversion layer may be configured to receive multiple pulses, where the multiple pulses include at least two pulses having the same magnitude.

摘要翻译： 示例性实施例提供了一种用于对包括电阻转换层的电阻式存储器件进行编程的方法。 该方法可以包括将多个脉冲施加到电阻转换层。 多个脉冲可以包括至少两个脉冲，其中至少两个脉冲的每个脉冲的幅度相同。 至少两个脉冲的第一脉冲可以施加在电阻转换层的一侧，并且至少两个脉冲的第二脉冲可以施加在电阻转换层的另一侧上。 施加步骤可以在设定的编程操作或复位编程操作期间执行。 用于编程电阻转换层的电阻性存储器件可以包括第一和第二电极，下部结构以及耦合在第一和第二电极之间的电阻转换层。 电阻转换层可以被配置为接收多个脉冲，其中多个脉冲包括具有相同幅度的至少两个脉冲。

公开(公告)号：US08102692B2

公开(公告)日：2012-01-24

申请号：US12222504

申请日：2008-08-11

申请人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

发明人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

IPC分类号： G11C19/00

CPC分类号： G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1677 ,  Y10S977/933

摘要： Data storage devices using movement of magnetic domain walls and methods of operating the same are provided. A data storage device includes a magnetic track having a verifying region. Within the verifying region, first and second magnetic domains are arranged alternately. The first magnetic domains correspond to first data and the second magnetic domains correspond to second data. A verification sensor is arranged at an end of the verifying region. A current applying element is configured to apply one or more pulse currents to the magnetic track. A first counter is connected to the verification sensor and configured to count the number of magnetic domains passing through the verification sensor.

摘要翻译： 提供使用磁畴壁移动的数据存储装置及其操作方法。 数据存储装置包括具有验证区域的磁迹。 在验证区域内，交替排列第一和第二磁畴。 第一磁畴对应于第一数据，第二磁畴对应于第二数据。 验证传感器布置在验证区域的末端。 电流施加元件被配置为向磁道施加一个或多个脉冲电流。 第一计数器连接到验证传感器并且被配置为对通过验证传感器的磁畴的数量进行计数。

公开(公告)号：US20090251581A1

公开(公告)日：2009-10-08

申请号：US12230363

申请日：2008-08-28

申请人： Dae-Kil Cha ,  Bok-ki Min ,  Young-gu Jin ,  Won-joo Kim ,  Seung-hoon Lee ,  Yoon-dong Park

发明人： Dae-Kil Cha ,  Bok-ki Min ,  Young-gu Jin ,  Won-joo Kim ,  Seung-hoon Lee ,  Yoon-dong Park

IPC分类号： H01L31/112 ,  H04N5/335

CPC分类号： H01L27/14679 ,  H01L27/14609 ,  H04N5/335 ,  H04N5/3355

摘要： An image sensor includes a plurality of unit pixels arranged in an array. Each unit pixel includes a plurality of sub-pixels configured to be irradiated by light having the same wavelength. Each sub-pixel includes a plurality of floating body transistors. Each floating body transistor includes a source region, a drain region, a floating body region between the source region and the drain region, and a gate electrode formed on the floating body region.

摘要翻译： 图像传感器包括排列成阵列的多个单位像素。 每个单位像素包括被配置为被具有相同波长的光照射的多个子像素。 每个子像素包括多个浮体晶体管。 每个浮体晶体管包括源极区域，漏极区域，源极区域和漏极区域之间的浮体区域以及形成在浮动体区域上的栅极电极。

公开(公告)号：US20090207718A1

公开(公告)日：2009-08-20

申请号：US12213856

申请日：2008-06-25

申请人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

发明人： In-sung Joe ,  Yoon-dong Park ,  Seung-hoon Lee

IPC分类号： G11B9/00

CPC分类号： G11C19/0841 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： An information storage device using magnetic domain wall motion and a method of operating the same are provided. The information storage device includes a magnetic track having a plurality of magnetic domains and magnetic domain walls arranged alternately. A current supply unit is configured to apply current to the magnetic track, and a plurality of reading/writing units are arranged on the magnetic track. The information storage device further includes a plurality of storage units. Each of the plurality of storage units is connected to a corresponding one of the plurality of reading/writing units for storing data temporarily.

摘要翻译： 提供了使用磁畴壁运动的信息存储装置及其操作方法。 信息存储装置包括具有多个交替设置的多个磁畴和磁畴壁的磁迹。 电流供给单元被配置为向磁道施加电流，并且在磁道上布置多个读/写单元。 信息存储装置还包括多个存储单元。 多个存储单元中的每一个连接到用于临时存储数据的多个读/写单元中的对应的一个。

公开(公告)号：US20090097321A1

公开(公告)日：2009-04-16

申请号：US12010943

申请日：2008-01-31

申请人： Suk-pil Kim ,  Yoon-dong Park ,  Deok-kee Kim ,  Won-joo Kim ,  Young-gu Jin ,  Seung-hoon Lee

发明人： Suk-pil Kim ,  Yoon-dong Park ,  Deok-kee Kim ,  Won-joo Kim ,  Young-gu Jin ,  Seung-hoon Lee

IPC分类号： G11C16/06 ,  H01L29/788 ,  H01L21/336

CPC分类号： H01L27/115 ,  G11C16/0483 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/1203 ,  H01L29/42328 ,  H01L29/42336 ,  H01L29/42344 ,  H01L29/42352 ,  H01L29/66825 ,  H01L29/66833

摘要： A non-volatile memory device may include at least one semiconductor layer, a plurality of control gate electrodes, a plurality of charge storage layers, at least one first auxiliary electrode, and/or at least one second auxiliary electrode. The plurality of control gate electrodes may be recessed into the semiconductor layer. The plurality of charge storage layers may be between the plurality of control gate electrodes and the semiconductor layer. The first and second auxiliary electrodes may be arranged to face each other. The plurality of control gate electrodes may be between the first and second auxiliary electrodes and capacitively coupled with the semiconductor layer.

摘要翻译： 非易失性存储器件可以包括至少一个半导体层，多个控制栅电极，多个电荷存储层，至少一个第一辅助电极和/或至少一个第二辅助电极。 多个控制栅电极可以凹入半导体层。 多个电荷存储层可以在多个控制栅电极和半导体层之间。 第一和第二辅助电极可以被布置成彼此面对。 多个控制栅电极可以在第一和第二辅助电极之间并与半导体层电容耦合。

公开(公告)号：US08154640B2

公开(公告)日：2012-04-10

申请号：US12230363

申请日：2008-08-28

申请人： Dae-kil Cha ,  Bok-ki Min ,  Young-gu Jin ,  Won-joo Kim ,  Seung-hoon Lee ,  Yoon-dong Park

发明人： Dae-kil Cha ,  Bok-ki Min ,  Young-gu Jin ,  Won-joo Kim ,  Seung-hoon Lee ,  Yoon-dong Park

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14679 ,  H01L27/14609 ,  H04N5/335 ,  H04N5/3355

摘要： An image sensor includes a plurality of unit pixels arranged in an array. Each unit pixel includes a plurality of sub-pixels configured to be irradiated by light having the same wavelength. Each sub-pixel includes a plurality of floating body transistors. Each floating body transistor includes a source region, a drain region, a floating body region between the source region and the drain region, and a gate electrode formed on the floating body region.

摘要翻译： 图像传感器包括排列成阵列的多个单位像素。 每个单位像素包括被配置为被具有相同波长的光照射的多个子像素。 每个子像素包括多个浮体晶体管。 每个浮体晶体管包括源极区域，漏极区域，源极区域和漏极区域之间的浮体区域以及形成在浮动体区域上的栅极电极。

公开(公告)号：US08035806B2

公开(公告)日：2011-10-11

申请号：US12379021

申请日：2009-02-11

申请人： Young-gu Jin ,  Dae-kil Cha ,  Seung-hoon Lee ,  Yoon-dong Park

发明人： Young-gu Jin ,  Dae-kil Cha ,  Seung-hoon Lee ,  Yoon-dong Park

IPC分类号： G01C3/08

CPC分类号： G01C3/08 ,  G01B11/22 ,  H01L27/14609 ,  H01L27/14641

摘要： Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.

摘要翻译： 提供了包括双转移门的距离测量传感器和包括距离测量传感器的三维彩色图像传感器。 距离测量传感器可以包括在掺杂有第一杂质的衬底上彼此间隔开的第一和第二电荷存储区域，第一和第二电荷存储区域掺杂有第二杂质; 在基板上的第一和第二电荷存储区域之间的光电转换区域，掺杂有第二杂质，并通过接收光产生光电荷; 以及第一和第二传输门，其形成在光电转换区与衬底上方的第一和第二电荷存储区之间，以选择性地将光电转换区中的光电荷转移到第一和第二电荷存储区。

公开(公告)号：US20100033611A1

公开(公告)日：2010-02-11

申请号：US12461063

申请日：2009-07-30

申请人： Seung-hoon Lee ,  Yoon-dong Park ,  Young-gu Jin ,  Seung-hyuk Chang ,  Dae-kil Cha

发明人： Seung-hoon Lee ,  Yoon-dong Park ,  Young-gu Jin ,  Seung-hyuk Chang ,  Dae-kil Cha

IPC分类号： H04N13/02

CPC分类号： H01L27/14645 ,  H01L27/14641 ,  H04N5/332 ,  H04N5/3696 ,  H04N5/37457 ,  H04N13/229 ,  H04N13/257

摘要： Provided is a pixel array of a three-dimensional image sensor. The pixel array includes unit pixel patterns each including a color pixel and a distance-measuring pixel arranged in an array form. The unit pixel patterns are arranged in such a way that a group of distance-measuring pixels are disposed adjacent to each other.

摘要翻译： 提供了三维图像传感器的像素阵列。 像素阵列包括各自包括以阵列形式布置的彩色像素和距离测量像素的单位像素图案。 单位像素图案被布置成使得一组距离测量像素彼此相邻地布置。

公开(公告)号：US20090096060A1

公开(公告)日：2009-04-16

申请号：US12216094

申请日：2008-06-30

申请人： Deok-kee Kim ,  Yoon-dong Park ,  Seung-hoon Lee ,  I-hun Song ,  Won-joo Kim ,  Young-gu Jin ,  Hyuk-soon Choi ,  Suk-pil Kim

发明人： Deok-kee Kim ,  Yoon-dong Park ,  Seung-hoon Lee ,  I-hun Song ,  Won-joo Kim ,  Young-gu Jin ,  Hyuk-soon Choi ,  Suk-pil Kim

IPC分类号： H01L29/00 ,  H01L21/00

CPC分类号： H01L23/5252 ,  G11C17/16 ,  H01L27/1021 ,  H01L2924/0002 ,  H01L2924/00

摘要： Antifuse structures, antifuse arrays, methods of manufacturing, and methods of operating the same are provided. An antifuse structure includes bitlines formed as first diffusing regions within a semiconductor substrate, an insulation layer formed on the bitlines, and wordlines formed on the insulation layer. An antifuse array includes a plurality of antifuse structures arranged in an array.

摘要翻译： 提供了防泡结构，反熔丝阵列，制造方法和操作方法。 反熔丝结构包括在半导体衬底内形成为第一扩散区的位线，形成在位线上的绝缘层，以及形成在绝缘层上的字线。 反熔丝阵列包括排列成阵列的多个反熔丝结构。