Organic light emitting device having metal electrodes in a groove with steps in a substrate
    2.
    发明授权
    Organic light emitting device having metal electrodes in a groove with steps in a substrate 有权
    具有金属电极的有机发光器件在具有基板的台阶的槽中

    公开(公告)号:US07268489B2

    公开(公告)日:2007-09-11

    申请号:US11020671

    申请日:2004-12-27

    IPC分类号: H05B33/14 H05B33/00

    摘要: An organic light emitting device includes first and second metal layers used as electrodes on a substrate, an electron transport layer on the first metal layer, a first partition wall insulating the first metal layer from the second metal layer and extending onto the electron transport layer along the first metal layer, a second partition wall on the first metal layer around the electron transport layer, a third partition wall separated from the first partition wall and on the second metal layer, an organic light emitting layer on the electron transport layer, a hole transport layer on the organic light emitting layer and contacting the second metal layer, a protecting layer covering the hole transport layer and extending to the first and second metal layers beyond the second and third partition walls, and sealing materials filling spaces between the protecting layer and the first and second layers.

    摘要翻译: 有机发光器件包括在基板上用作电极的第一和第二金属层,第一金属层上的电子传输层,第一分隔壁,将第一金属层与第二金属层绝缘并延伸到电子传输层上 第一金属层,围绕电子传输层的第一金属层上的第二分隔壁,与第一分隔壁和第二金属层分离的第三分隔壁,电子传输层上的有机发光层,孔 在第二金属层和第二金属层之间的接触层,覆盖空穴传输层并延伸到第一和第二金属层超过第二和第三隔壁的保护层,以及密封材料填充保护层和 第一层和第二层。

    Light emitting diode and method of fabricating the same
    3.
    发明授权
    Light emitting diode and method of fabricating the same 有权
    发光二极管及其制造方法

    公开(公告)号:US07482189B2

    公开(公告)日:2009-01-27

    申请号:US11896634

    申请日:2007-09-04

    IPC分类号: H01L27/25 H01L29/22

    CPC分类号: H01L33/24 H01L33/0075

    摘要: A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ≦β) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.

    摘要翻译: 提供了一种发光二极管(LED)和方法,用于制造具有改进结构的LED,以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层,以具有多个突起,从而具有不平坦表面,其中突起的侧表面以第一倾斜角α(35°<=α<= 90°)倾斜 )相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层,其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β(35°,β=α)倾斜, 到基板的上表面; 在有源层的表面上保形地形成的p-GaN层,其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ(20°,γ= 相对于衬底的上表面<=β); 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。

    Light emitting diode and method of fabricating the same
    4.
    发明申请
    Light emitting diode and method of fabricating the same 有权
    发光二极管及其制造方法

    公开(公告)号:US20080032436A1

    公开(公告)日:2008-02-07

    申请号:US11896634

    申请日:2007-09-04

    IPC分类号: H01L33/00

    CPC分类号: H01L33/24 H01L33/0075

    摘要: A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ≦β) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.

    摘要翻译: 提供了一种发光二极管(LED)和方法,用于制造具有改进结构的LED,以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层,以具有多个突起,从而具有不平坦表面,其中突起的侧表面以第一倾斜角α(35°<=α<= 90°)倾斜 )相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层,其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β(35°,β=α)倾斜, 到基板的上表面; 在有源层的表面上保形地形成的p-GaN层,其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ(20°,γ= 相对于衬底的上表面<=β); 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。

    Light emitting diode and method of fabricating the same
    5.
    发明申请
    Light emitting diode and method of fabricating the same 有权
    发光二极管及其制造方法

    公开(公告)号:US20070012933A1

    公开(公告)日:2007-01-18

    申请号:US11448832

    申请日:2006-06-08

    IPC分类号: H01L33/00

    CPC分类号: H01L33/24 H01L33/0075

    摘要: A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ

    摘要翻译: 提供了一种发光二极管(LED)和方法,用于制造具有改进结构的LED,以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层,以具有多个突起,从而具有不平坦表面,其中突起的侧表面以第一倾斜角α(35°<=α<= 90°)倾斜 )相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层,其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β(35°,β=α)倾斜, 到基板的上表面; 在有源层的表面上保形地形成的p-GaN层,其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ(20°,γ= β)相对于所述基板的上表面; 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。

    ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光装置及其制造方法

    公开(公告)号:US20070270072A1

    公开(公告)日:2007-11-22

    申请号:US11834949

    申请日:2007-08-07

    IPC分类号: H01J9/00

    摘要: An organic light emitting device can includes first and second metal layers used as electrodes on a substrate, an electron transport layer on the first metal layer, a first partition wall insulating the first metal layer from the second metal layer and extending onto the electron transport layer along the first metal layer, a second partition wall on the first metal layer around the electron transport layer, a third partition wall separated from the first partition wall and on the second metal layer, an organic light emitting layer on the electron transport layer, a hole transport layer on the organic light emitting layer and contacting the second metal layer, a protecting layer covering the hole transport layer and extending to the first and second metal layers beyond the second and third partition walls, and sealing materials filling spaces between the protecting layer and the first and second layers.

    摘要翻译: 有机发光器件可以包括在基板上用作电极的第一和第二金属层,第一金属层上的电子传输层,将第一金属层与第二金属层绝缘并延伸到电子传输层上的第一分隔壁 沿着第一金属层,围绕电子传输层的第一金属层上的第二分隔壁,与第一分隔壁和第二金属层分离的第三隔壁,电子传输层上的有机发光层, 空穴传输层,并且与第二金属层接触,覆盖空穴传输层并延伸到超过第二和第三隔壁的第一和第二金属层的保护层,以及填充保护层之间的空间的密封材料 以及第一层和第二层。

    Light emitting diode and method of fabricating the same

    公开(公告)号:US07282746B2

    公开(公告)日:2007-10-16

    申请号:US11448832

    申请日:2006-06-08

    IPC分类号: H01L27/15 H01L29/22

    CPC分类号: H01L33/24 H01L33/0075

    摘要: A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ

    Organic light emitting device and method of manufacturing the same
    8.
    发明申请
    Organic light emitting device and method of manufacturing the same 有权
    有机发光装置及其制造方法

    公开(公告)号:US20050156162A1

    公开(公告)日:2005-07-21

    申请号:US11020671

    申请日:2004-12-27

    摘要: An organic light emitting device can includes first and second metal layers used as electrodes on a substrate, an electron transport layer on the first metal layer, a first partition wall insulating the first metal layer from the second metal layer and extending onto the electron transport layer along the first metal layer, a second partition wall on the first metal layer around the electron transport layer, a third partition wall separated from the first partition wall and on the second metal layer, an organic light emitting layer on the electron transport layer, a hole transport layer on the organic light emitting layer and contacting the second metal layer, a protecting layer covering the hole transport layer and extending to the first and second metal layers beyond the second and third partition walls, and sealing materials filling spaces between the protecting layer and the first and second layers.

    摘要翻译: 有机发光器件可以包括在基板上用作电极的第一和第二金属层,第一金属层上的电子传输层,将第一金属层与第二金属层绝缘并延伸到电子传输层上的第一分隔壁 沿着第一金属层,围绕电子传输层的第一金属层上的第二分隔壁,与第一分隔壁和第二金属层分离的第三分隔壁,电子传输层上的有机发光层, 空穴传输层,并且与第二金属层接触,覆盖空穴传输层并延伸到超过第二和第三隔壁的第一和第二金属层的保护层,以及填充保护层之间的空间的密封材料 以及第一层和第二层。

    2D/3D switchable backlight unit and image display device
    10.
    发明授权
    2D/3D switchable backlight unit and image display device 有权
    2D / 3D可切换背光单元和图像显示设备

    公开(公告)号:US08730282B2

    公开(公告)日:2014-05-20

    申请号:US13020896

    申请日:2011-02-04

    IPC分类号: G09G5/02

    CPC分类号: G09G5/10

    摘要: A 2D/3D switchable backlight unit and an image display device employing the same are provided. The 2D/3D switchable backlight unit includes a light source, a light guide plate in which light emitted from the light source is total-internal-reflected, and a switch array comprising a plurality of switches that selectively contact a first surface of the light guide plate and emit light by frustrated total internal reflection inside the light guide plate. In 2D mode, each of the switches contacts the first surface of the light guide plate. In 3D mode, some of the switches contact the first surface of the light guide plate.

    摘要翻译: 提供2D / 3D可切换背光单元和使用该背光单元的图像显示装置。 2D / 3D可切换背光单元包括光源,其中从光源发射的光被全反射的导光板,以及包括选择性地接触光导体的第一表面的多个开关的开关阵列 通过导光板内的沮丧的全内反射来发光。 在2D模式中,每个开关接触导光板的第一表面。 在3D模式中,一些开关接触导光板的第一表面。