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公开(公告)号：US20180188959A1
公开(公告)日：2018-07-05
申请号：US15394341
申请日：2016-12-29
IPC分类号： G06F3/06
CPC分类号： G11C11/406 , G11C7/20 , G11C7/22 , G11C11/4072 , G11C11/4091 , G11C29/023 , G11C29/028 , G11C29/50012 , G11C2029/0409
摘要： An embodiment of a memory module controller may be communicatively coupled to a storage media to initialize training-related register values, train the storage media independent of a BIOS, calibrate a sense amplifier, and indicate when the storage media is completely trained. Other embodiments are disclosed and claimed.
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2.发明申请公开(公告)号：US20170177244A1
公开(公告)日：2017-06-22
申请号：US14975160
申请日：2015-12-18
IPC分类号： G06F3/06
CPC分类号： G06F3/0619 , G06F3/0611 , G06F3/0659 , G06F3/0679 , G06F3/0685 , G06F3/0688 , G06F11/00 , G06F12/0238 , G06F12/0246 , G06F12/0866 , G06F12/0888 , G06F2212/1024 , G06F2212/1028 , G06F2212/1032 , G06F2212/7203 , G06F2212/7208 , Y02D10/13
摘要： Technologies for accessing memory devices of a memory module device includes receiving a memory read request form a host and reading, in response to the memory read request, a rank of active non-volatile memory devices of the memory module device while contemporaneously accessing a volatile memory device of the memory module device. The volatile memory device shares data lines of a data bus of the memory module device with a spare non-volatile memory device associated with the rank of active non-volatile memory devices. During write operations, each of the rank of active non-volatile memory devices and the spare non-volatile memory device associated with the rank of active non-volatile memory devices are written to facilitate proper wear leveling of the non-volatile memory devices. The spare non-volatile memory device may replace a failed non-volatile memory devices of the rank of active non-volatile memory devices. In such an event, the volatile memory device is no longer contemporaneously accessed during read operations of the rank of active non-volatile memory devices.
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