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公开(公告)号：US07916513B2
公开(公告)日：2011-03-29
申请号：US12265418
申请日：2008-11-05
申请人： Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
发明人： Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
CPC分类号： G11C11/22 , B82Y10/00 , H01L27/11507 , H01L28/56
摘要： A data storage device comprising a ferroelectric layer, a perovskite structure, and at least one sensor, where the perovskite structure has a polarity discontinuity configured to generate capacitance voltages in the perovskite structure based on polarization charges of the ferroelectric material, and where the at least one sensor is configured to read the capacitance voltages from the perovskite structure.
摘要翻译： 一种包括铁电体层，钙钛矿结构和至少一个传感器的数据存储装置，其中钙钛矿结构具有极性不连续性，其被配置为基于铁电材料的极化电荷产生钙钛矿结构中的电容电压，并且其中至少 一个传感器被配置为从钙钛矿结构读取电容电压。
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公开(公告)号：US20100110754A1
公开(公告)日：2010-05-06
申请号：US12265418
申请日：2008-11-05
申请人： Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
发明人： Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
IPC分类号： G11C11/22 , H01L27/115
CPC分类号： G11C11/22 , B82Y10/00 , H01L27/11507 , H01L28/56
摘要： A data storage device comprising a ferroelectric layer, a perovskite structure, and at least one sensor, where the perovskite structure has a polarity discontinuity configured to generate capacitance voltages in the perovskite structure based on polarization charges of the ferroelectric material, and where the at least one sensor is configured to read the capacitance voltages from the perovskite structure.
摘要翻译： 一种包括铁电体层，钙钛矿结构和至少一个传感器的数据存储装置，其中钙钛矿结构具有极性不连续性，其被配置为基于铁电材料的极化电荷产生钙钛矿结构中的电容电压，并且其中至少 一个传感器被配置为从钙钛矿结构读取电容电压。
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公开(公告)号：US08227701B2
公开(公告)日：2012-07-24
申请号：US12359386
申请日：2009-01-26
申请人： Stephen John Wrazien , Florin Zavaliche , Joachim Walter Ahner , Tong Zhao , Martin Gerard Forrester , Shan Hu
发明人： Stephen John Wrazien , Florin Zavaliche , Joachim Walter Ahner , Tong Zhao , Martin Gerard Forrester , Shan Hu
IPC分类号： H05K1/03
CPC分类号： H01G4/33 , B82Y10/00 , G11C11/22 , H01G7/06 , H01L21/28291 , H01L27/20 , H01L29/516 , H01L29/6684 , H01L29/78391
摘要： A reconfigurable electric circuit includes first and second crystalline material layers positioned adjacent to each other and forming a first interface, and a first ferroelectric layer positioned adjacent to the first crystalline material layer and having ferroelectric domains applying an electric field to regions of the first interface to induce a quasi two-dimensional electron gas in the regions, wherein at least one of the regions forms a gate and at least one of the regions forms a channel.
摘要翻译： 可重构电路包括彼此相邻并形成第一界面的第一和第二晶体材料层，以及邻近第一晶体材料层定位并且具有向第一界面的区域施加电场的铁电畴的第一铁电层， 在区域中诱发准二维电子气，其中至少一个区域形成栅极，并且至少一个区域形成沟道。
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公开(公告)号：US20100187583A1
公开(公告)日：2010-07-29
申请号：US12359386
申请日：2009-01-26
申请人： Stephen John Wrazien , Florin Zavaliche , Joachim Walter Ahner , Tong Zhao , Martin Gerard Forrester , Shan Hu
发明人： Stephen John Wrazien , Florin Zavaliche , Joachim Walter Ahner , Tong Zhao , Martin Gerard Forrester , Shan Hu
CPC分类号： H01G4/33 , B82Y10/00 , G11C11/22 , H01G7/06 , H01L21/28291 , H01L27/20 , H01L29/516 , H01L29/6684 , H01L29/78391
摘要： A reconfigurable electric circuit includes first and second crystalline material layers positioned adjacent to each other and forming a first interface, and a first ferroelectric layer positioned adjacent to the first crystalline material layer and having ferroelectric domains applying an electric field to regions of the first interface to induce a quasi two-dimensional electron gas in the regions, wherein at least one of the regions forms a gate and at least one of the regions forms a channel.
摘要翻译： 可重构电路包括彼此相邻并形成第一界面的第一和第二晶体材料层，以及邻近第一晶体材料层定位并且具有向第一界面的区域施加电场的铁电畴的第一铁电层， 在区域中诱发准二维电子气，其中至少一个区域形成栅极，并且至少一个区域形成沟道。
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