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公开(公告)号:US08227701B2
公开(公告)日:2012-07-24
申请号:US12359386
申请日:2009-01-26
申请人: Stephen John Wrazien , Florin Zavaliche , Joachim Walter Ahner , Tong Zhao , Martin Gerard Forrester , Shan Hu
发明人: Stephen John Wrazien , Florin Zavaliche , Joachim Walter Ahner , Tong Zhao , Martin Gerard Forrester , Shan Hu
IPC分类号: H05K1/03
CPC分类号: H01G4/33 , B82Y10/00 , G11C11/22 , H01G7/06 , H01L21/28291 , H01L27/20 , H01L29/516 , H01L29/6684 , H01L29/78391
摘要: A reconfigurable electric circuit includes first and second crystalline material layers positioned adjacent to each other and forming a first interface, and a first ferroelectric layer positioned adjacent to the first crystalline material layer and having ferroelectric domains applying an electric field to regions of the first interface to induce a quasi two-dimensional electron gas in the regions, wherein at least one of the regions forms a gate and at least one of the regions forms a channel.
摘要翻译: 可重构电路包括彼此相邻并形成第一界面的第一和第二晶体材料层,以及邻近第一晶体材料层定位并且具有向第一界面的区域施加电场的铁电畴的第一铁电层, 在区域中诱发准二维电子气,其中至少一个区域形成栅极,并且至少一个区域形成沟道。
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公开(公告)号:US20100187583A1
公开(公告)日:2010-07-29
申请号:US12359386
申请日:2009-01-26
申请人: Stephen John Wrazien , Florin Zavaliche , Joachim Walter Ahner , Tong Zhao , Martin Gerard Forrester , Shan Hu
发明人: Stephen John Wrazien , Florin Zavaliche , Joachim Walter Ahner , Tong Zhao , Martin Gerard Forrester , Shan Hu
CPC分类号: H01G4/33 , B82Y10/00 , G11C11/22 , H01G7/06 , H01L21/28291 , H01L27/20 , H01L29/516 , H01L29/6684 , H01L29/78391
摘要: A reconfigurable electric circuit includes first and second crystalline material layers positioned adjacent to each other and forming a first interface, and a first ferroelectric layer positioned adjacent to the first crystalline material layer and having ferroelectric domains applying an electric field to regions of the first interface to induce a quasi two-dimensional electron gas in the regions, wherein at least one of the regions forms a gate and at least one of the regions forms a channel.
摘要翻译: 可重构电路包括彼此相邻并形成第一界面的第一和第二晶体材料层,以及邻近第一晶体材料层定位并且具有向第一界面的区域施加电场的铁电畴的第一铁电层, 在区域中诱发准二维电子气,其中至少一个区域形成栅极,并且至少一个区域形成沟道。
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公开(公告)号:US07916513B2
公开(公告)日:2011-03-29
申请号:US12265418
申请日:2008-11-05
申请人: Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
发明人: Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
CPC分类号: G11C11/22 , B82Y10/00 , H01L27/11507 , H01L28/56
摘要: A data storage device comprising a ferroelectric layer, a perovskite structure, and at least one sensor, where the perovskite structure has a polarity discontinuity configured to generate capacitance voltages in the perovskite structure based on polarization charges of the ferroelectric material, and where the at least one sensor is configured to read the capacitance voltages from the perovskite structure.
摘要翻译: 一种包括铁电体层,钙钛矿结构和至少一个传感器的数据存储装置,其中钙钛矿结构具有极性不连续性,其被配置为基于铁电材料的极化电荷产生钙钛矿结构中的电容电压,并且其中至少 一个传感器被配置为从钙钛矿结构读取电容电压。
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公开(公告)号:US20100110754A1
公开(公告)日:2010-05-06
申请号:US12265418
申请日:2008-11-05
申请人: Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
发明人: Shan Hu , Tong Zhao , Florin Zavaliche , Joachim Ahner , Stephen John Wrazien , Martin Gerard Forrester
IPC分类号: G11C11/22 , H01L27/115
CPC分类号: G11C11/22 , B82Y10/00 , H01L27/11507 , H01L28/56
摘要: A data storage device comprising a ferroelectric layer, a perovskite structure, and at least one sensor, where the perovskite structure has a polarity discontinuity configured to generate capacitance voltages in the perovskite structure based on polarization charges of the ferroelectric material, and where the at least one sensor is configured to read the capacitance voltages from the perovskite structure.
摘要翻译: 一种包括铁电体层,钙钛矿结构和至少一个传感器的数据存储装置,其中钙钛矿结构具有极性不连续性,其被配置为基于铁电材料的极化电荷产生钙钛矿结构中的电容电压,并且其中至少 一个传感器被配置为从钙钛矿结构读取电容电压。
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公开(公告)号:US07821808B2
公开(公告)日:2010-10-26
申请号:US12363062
申请日:2009-01-30
IPC分类号: G11C11/22
CPC分类号: G11C11/22
摘要: A data storage system comprises first and second storage layers, a reader and a writer. The first storage layer has a first coercive potential and a first polarization. The second storage layer has a second coercive potential that is less than the first coercive potential, and a second polarization that is coupled to the first polarization. The writer performs a write operation in which a write potential is imposed across the first and second storage layers, such that the first coercive potential is exceeded across the first storage layer and the second coercive potential is exceeded across the second storage layer. The reader performs a read operation in which a read potential is imposed across the first and second storage layers, such that the second coercive potential is exceeded across the second storage layer and the first coercive potential is not exceeded across the first storage layer.
摘要翻译: 数据存储系统包括第一和第二存储层,读取器和写入器。 第一存储层具有第一矫顽电位和第一极化。 第二存储层具有小于第一矫顽电位的第二矫顽电位和耦合到第一极化的第二极化。 写入器执行写入操作,其中在第一和第二存储层上施加写入电位,使得跨越第一存储层超过第一矫顽电位,并且超过第二存储层超过第二矫顽电位。 读取器执行其中在第一和第二存储层上施加读取电位的读取操作,使得跨越第二存储层超过第二矫顽电位,并且跨越第一存储层不超过第一矫顽电位。
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公开(公告)号:US20100195369A1
公开(公告)日:2010-08-05
申请号:US12363062
申请日:2009-01-30
CPC分类号: G11C11/22
摘要: A data storage system comprises first and second storage layers, a reader and a writer. The first storage layer has a first coercive potential and a first polarization. The second storage layer has a second coercive potential that is less than the first coercive potential, and a second polarization that is coupled to the first polarization. The writer performs a write operation in which a write potential is imposed across the first and second storage layers, such that the first coercive potential is exceeded across the first storage layer and the second coercive potential is exceeded across the second storage layer. The reader performs a read operation in which a read potential is imposed across the first and second storage layers, such that the second coercive potential is exceeded across the second storage layer and the first coercive potential is not exceeded across the first storage layer.
摘要翻译: 数据存储系统包括第一和第二存储层,读取器和写入器。 第一存储层具有第一矫顽电位和第一极化。 第二存储层具有小于第一矫顽电位的第二矫顽电位和耦合到第一极化的第二极化。 写入器执行写入操作,其中在第一和第二存储层上施加写入电位,使得跨越第一存储层超过第一矫顽电位,并且超过第二存储层超过第二矫顽电位。 读取器执行其中在第一和第二存储层上施加读取电位的读取操作,使得跨越第二存储层超过第二矫顽电位,并且跨越第一存储层不超过第一矫顽电位。
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公开(公告)号:US20090092805A1
公开(公告)日:2009-04-09
申请号:US11866443
申请日:2007-10-03
CPC分类号: G11B9/02 , B82Y10/00 , G11B5/746 , G11B9/1481 , Y10T428/24942
摘要: An apparatus includes a ferroelectric layer and a polarization pattern configured in the ferroelectric layer to represent position data. The polarization pattern has a switchable polarization state domain and an unswitchable polarization state domain. A method includes providing a ferroelectric layer and establishing a polarization pattern in the ferroelectric layer to represent position data.
摘要翻译: 一种装置包括强电介质层和配置在铁电层中以表示位置数据的偏振图案。 极化图案具有可切换的偏振状态域和不可切换的偏振态域。 一种方法包括提供铁电层并在铁电层中建立极化图案以表示位置数据。
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公开(公告)号:US07876661B2
公开(公告)日:2011-01-25
申请号:US11865878
申请日:2007-10-02
申请人: Tong Zhao , Martin G. Forrester , Florin Zavaliche , Dierk Guenter Bolten , Andreas Karl Roelofs
发明人: Tong Zhao , Martin G. Forrester , Florin Zavaliche , Dierk Guenter Bolten , Andreas Karl Roelofs
IPC分类号: G11B7/00
CPC分类号: G11B9/02 , Y10S977/947
摘要: An apparatus that provides for non-destructive readback of a ferroelectric material. The apparatus can include a ferroelectric layer with a scannable surface wherein the ferroelectric layer has a compensation charge adjacent the scannable surface. The apparatus also can include an electrode adjacent the scannable surface to sense the compensation charge. A related method is also disclosed.
摘要翻译: 提供铁电材料的非破坏性回读的装置。 该装置可以包括具有可扫描表面的铁电层,其中铁电层具有与可扫描表面相邻的补偿电荷。 该装置还可以包括邻近可扫描表面的电极以感测补偿电荷。 还公开了相关方法。
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公开(公告)号:US07792009B2
公开(公告)日:2010-09-07
申请号:US11865806
申请日:2007-10-02
IPC分类号: G11B7/00
CPC分类号: G11B9/02 , Y10S977/943
摘要: A ferroelectric polarization pattern with differing feedback signals. An apparatus including a ferroelectric layer and a polarization pattern configured in the ferroelectric layer to represent position data. The polarization pattern has a first switchable polarization state domain and a second switchable polarization state domain that are both switchable by an applied signal. The first switchable polarization state domain has a first feedback signal in response to the applied signal that is different than a second feedback signal of the second switchable polarization state domain at the applied signal.
摘要翻译: 具有不同反馈信号的铁电极化图案。 一种包括铁电层和在铁电体层中配置的表示位置数据的偏振图案的装置。 极化图案具有可由施加的信号切换的第一可切换偏振状态域和第二可切换偏振状态域。 第一可切换偏振态域具有响应于施加的信号的第一反馈信号,所施加的信号与施加的信号处的第二可切换偏振状态域的第二反馈信号不同。
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公开(公告)号:US20100188773A1
公开(公告)日:2010-07-29
申请号:US12361762
申请日:2009-01-29
CPC分类号: G11B5/82 , B82Y10/00 , G11B5/02 , G11B5/314 , G11B5/743 , G11B5/746 , G11B5/855 , G11B9/02 , G11B2005/0005
摘要: A data storage medium that includes a multiferroic thin film and ferromagnetic storage domains formed in the multiferroic thin film. The multiferroic thin film may be formed of at least one of BiFeO3, or any other ferroelectric and antiferromagnetic material. The ferromagnetic storage domains may be formed in the multiferroic thin film by an ion implantation process. A data storage system that incorporates the data storage medium is also provided.
摘要翻译: 一种数据存储介质,包括形成在多铁性薄膜中的多铁性薄膜和铁磁性存储区域。 多铁性薄膜可以由BiFeO 3或任何其它铁电和反铁磁材料中的至少一种形成。 铁磁存储区域可以通过离子注入工艺在多铁性薄膜中形成。 还提供了并入数据存储介质的数据存储系统。
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