利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

198 条记录 (耗时 0.032 秒)

    Anti-ferromagnetically coupled granular-continuous magnetic recording media
    2.
    发明授权
    Anti-ferromagnetically coupled granular-continuous magnetic recording media 有权
    反铁磁耦合颗粒连续磁记录介质

    公开(公告)号：US07201977B2

    公开(公告)日：2007-04-10

    申请号：US10806114

    申请日：2004-03-23

    申请人： Shaoping Li ,  Kaizhong Gao ,  Lei Wang ,  Wenzhong Zhu

    发明人： Shaoping Li ,  Kaizhong Gao ,  Lei Wang ,  Wenzhong Zhu

    IPC分类号： G11B5/66

    CPC分类号： G11B5/732 ,  G11B5/653 ,  G11B5/656 ,  G11B5/66 ,  G11B5/667 ,  G11B5/725

    摘要： An anti-ferromagnetically coupled, granular-continuous (“AFC-GC”) magnetic recording medium having increased thermal stability, writability, and signal-to-medium noise ratio (“SMNR”), comprising a layer stack including, in sequence from a surface of a non-magnetic substrate: (a) a continuous ferromagnetic stabilizing layer; (b) a non-magnetic spacer layer; and (c) a granular ferromagnetic recording layer; wherein: (i) the continuous ferromagnetic stabilizing and granular ferromagnetic recording layers are anti-ferromagnetically coupled across the non-magnetic spacer layer, the amount of anti-ferromagnetic coupling preselected to ensure magnetic relaxation after writing; (ii) lateral interactions in the granular, ferromagnetic recording layer are substantially completely eliminated or suppressed; and (iii) the exchange coupling strength in the continuous, ferromagnetic stabilizing layer is preselected to be slightly larger than the strength of the anti-ferromagnetic coupling provided by the non-magnetic spacer layer to thereby enhance thermal stability of the recording bits.

    摘要翻译： 具有增加的热稳定性，可写性和信噪比（“SMNR”）的反铁磁耦合的粒状连续（“AFC-GC”）磁记录介质，包括层叠，其包括从 非磁性表面

    Anti-ferromagnetically coupled granular-continuous magnetic recording media
    6.
    发明申请
    Anti-ferromagnetically coupled granular-continuous magnetic recording media 有权
    反铁磁耦合颗粒连续磁记录介质

    公开(公告)号：US20050214585A1

    公开(公告)日：2005-09-29

    申请号：US10806114

    申请日：2004-03-23

    申请人： Shaoping Li ,  Kaizhong Gao ,  Lei Wang ,  Wenzhong Zhu

    发明人： Shaoping Li ,  Kaizhong Gao ,  Lei Wang ,  Wenzhong Zhu

    IPC分类号： G11B5/64 ,  G11B5/66 ,  G11B5/72 ,  G11B5/725 ,  G11B5/73

    CPC分类号： G11B5/732 ,  G11B5/653 ,  G11B5/656 ,  G11B5/66 ,  G11B5/667 ,  G11B5/725

    摘要： An anti-ferromagnetically coupled, granular-continuous (“AFC-GC”) magnetic recording medium having increased thermal stability, writability, and signal-to-medium noise ratio (“SMNR”), comprising a layer stack including, in sequence from a surface of a non-magnetic substrate: (a) a continuous ferromagnetic stabilizing layer; (b) a non-magnetic spacer layer; and (c) a granular ferromagnetic recording layer; wherein: (i) the continuous ferromagnetic stabilizing and granular ferromagnetic recording layers are anti-ferromagnetically coupled across the non-magnetic spacer layer, the amount of anti-ferromagnetic coupling preselected to ensure magnetic relaxation after writing; (ii) lateral interactions in the granular, ferromagnetic recording layer are substantially completely eliminated or suppressed; and (iii) the exchange coupling strength in the continuous, ferromagnetic stabilizing layer is preselected to be slightly larger than the strength of the anti-ferromagnetic coupling provided by the non-magnetic spacer layer to thereby enhance thermal stability of the recording bits.

    摘要翻译： 具有增加的热稳定性，可写性和信噪比（“SMNR”）的反铁磁耦合的粒状连续（“AFC-GC”）磁记录介质，包括层叠，其包括从 非磁性基板的表面：（a）连续的铁磁稳定层; （b）非磁性间隔层; 和（c）粒状铁磁记录层; 其中：（i）连续的铁磁稳定和粒状铁磁记录层跨过非磁性间隔层进行反铁磁耦合，预先选择反铁磁性耦合量以确保写入后的磁弛豫; （ii）颗粒状铁磁记录层中的横向相互作用基本上完全消除或抑制; 并且（iii）连续的铁磁稳定层中的交换耦合强度被预先选择为略大于由非磁性间隔层提供的反铁磁耦合的强度，从而提高记录位的热稳定性。

    STRAM with compensation element and method of making the same
    9.
    发明授权
    STRAM with compensation element and method of making the same 失效
    STRAM具有补偿元素和制作方法

    公开(公告)号：US08508005B2

    公开(公告)日：2013-08-13

    申请号：US13477200

    申请日：2012-05-22

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    IPC分类号： H01L21/66 ,  G01R33/02 ,  G01C11/14

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

    摘要： A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

    摘要翻译： 自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME
    10.
    发明申请
    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME 失效
    具有补偿元件的条纹及其制造方法

    公开(公告)号：US20120248558A1

    公开(公告)日：2012-10-04

    申请号：US13477200

    申请日：2012-05-22

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    IPC分类号： H01L29/82

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

    摘要： A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

    摘要翻译： 自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。